-
公开(公告)号：EP1168308A3
公开(公告)日：2002-01-30
申请号：EP01304912.7
申请日：2001-06-05
发明人： Sakakima, Hiroshi , Satomi, Mitsuo , Sugita, Yasunari , Adachi, Hideaki , Kawawake, Yasuhiro , Iijima, Kenji
CPC分类号： G11B5/66 , G11B5/82 , G11B2005/0002 , G11B2005/001 , Y10S428/90 , Y10T428/115 , Y10T428/12465
摘要： A magnetic recording medium includes a magnetic film 1 for signal recording and a film 2 containing M 2 O y as a main component that is magnetically exchange-coupled to the magnetic film to increase the effective V and Ku of the magnetic film and to suppress thermal fluctuation. Herein, M is at least one element selected from Fe, Co, Ni, alkaline earth elements, Y, lanthanoids and Bi and includes at least one selected from Fe, Co and Ni as an essential element, and y is a value satisfying 2.8
-
2.发明公开
公开(公告)号：EP1168308A2
公开(公告)日：2002-01-02
申请号：EP01304912.7
申请日：2001-06-05
发明人： Sakakima, Hiroshi , Satomi, Mitsuo , Sugita, Yasunari , Adachi, Hideaki , Kawawake, Yasuhiro , Iijima, Kenji
CPC分类号： G11B5/66 , G11B5/82 , G11B2005/0002 , G11B2005/001 , Y10S428/90 , Y10T428/115 , Y10T428/12465
摘要： A magnetic recording medium includes a magnetic film 1 for signal recording and a film 2 containing M 2 O y as a main component that is magnetically exchange-coupled to the magnetic film to increase the effective V and Ku of the magnetic film and to suppress thermal fluctuation. Herein, M is at least one element selected from Fe, Co, Ni, alkaline earth elements, Y, lanthanoids and Bi and includes at least one selected from Fe, Co and Ni as an essential element, and y is a value satisfying 2.8
摘要翻译： 磁记录介质包括用于信号记录的磁性膜1和包含M 2 O y作为主要成分的膜2，该膜2与磁性膜磁性交换耦合以增加磁性膜的有效V和Ku并抑制热波动。 这里，M是选自Fe，Co，Ni，碱土金属元素，Y，镧系元素和Bi中的至少一种元素，并且包括选自Fe，Co和Ni中的至少一种作为必需元素，并且y是满足2.8 < y <3.2。
-
3.发明公开Magnetoresistance effect device, head, and memory element 审中-公开Magnetowiderstandsbauteil，Kopf und Speiclelement
公开(公告)号：EP1187103A2
公开(公告)日：2002-03-13
申请号：EP01117737.5
申请日：2001-07-30
CPC分类号： G11C11/16 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3272 , H01L27/228 , H01L43/08
摘要： A magnetoresistance effect device includes: a free layer (101) whose magnetization direction is easily rotated by an external magnetic field; a non-magnetization layer (103); and a pinned layer (102) whose magnetization direction is not easily rotated by an external magnetic field, the pinned layer being provided on a face of the non-magnetization layer (103) which is opposite to a face on which the free layer (101) is formed, wherein the pinned layer (102) includes: a first non-magnetic film (104) for exchange-coupling; and first and second magnetic films (105,106) which are antiferromagnetically exchange-coupled to each other via the first non-magnetic film (104), and the first non-magnetic film (104) includes one of the oxides of Ru, Ir, Rh, and Re.
摘要翻译： 磁阻效应器件包括：其磁化方向容易被外部磁场旋转的自由层（101）; 非磁化层（103）; 以及其磁化方向不容易被外部磁场旋转的被钉扎层（102），所述被钉扎层设置在所述非磁化层（103）的与自由层（101）的面相反的面上 ），其中被钉扎层（102）包括：用于交换耦合的第一非磁性膜（104）; 以及通过第一非磁性膜（104）反铁磁交换耦合的第一和第二磁性膜（105,106），并且第一非磁性膜（104）包括Ru，Ir，Rh的氧化物之一 ，和Re。
-
4.发明公开
公开(公告)号：EP1033764A3
公开(公告)日：2001-01-03
申请号：EP00104409.8
申请日：2000-03-02
发明人： Sakakima, Hiroshi , Sugita, Yasunari , Satomi, Mitsuo , Kawawake, Yasuhiro , Hiramoto, Masayoshi , Matsukawa, Nozomu
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B5/3925 , G11B2005/3996 , H01F10/3268 , H01F41/18 , H01F41/302 , H01L43/08
摘要： A magnetoresistance effect element (100) includes a free layer (5), in which a magnetization direction thereof is easily rotated in response to an external magnetic field, a first non-magnetic layer (4), and a first pinned layer (3) provided on a side opposite to the free layer of the first non-magnetic layer (4), in which a magnetization direction of the first pinned layer (3) is not easily rotated in response to the external magnetic field. At least one of the first pinned layer (3) and the free layer (5) includes a first metal magnetic film (32) contacting the first non-magnetic layer (4), and a first oxide magnetic film (31).
-
5.发明授权
公开(公告)号：EP1033764B1
公开(公告)日：2006-06-28
申请号：EP00104409.8
申请日：2000-03-02
发明人： Sakakima, Hiroshi , Sugita, Yasunari , Satomi, Mitsuo , Kawawake, Yasuhiro , Hiramoto, Masayoshi , Matsukawa, Nozomu
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B5/3925 , G11B2005/3996 , H01F10/3268 , H01F41/18 , H01F41/302 , H01L43/08
-
公开(公告)号：EP1134815A3
公开(公告)日：2001-10-31
申请号：EP01113584.5
申请日：1998-09-28
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10
摘要： A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an α-Fe 2 O 3 film. A surface roughness of the multilayer film is about 0.5 nm or less.
摘要翻译： 本发明的磁阻效应装置包括多层膜。 多层膜包括反铁磁性膜，第一铁磁性膜，非磁性膜和第二铁磁性膜，它们以此顺序直接或通过下层设置在非磁性基板上。 反铁磁膜包含α-Fe2O3膜。 多层膜的表面粗糙度为约0.5nm或更小。
-
7.发明公开
公开(公告)号：EP0930624A1
公开(公告)日：1999-07-21
申请号：EP99100579.4
申请日：1999-01-13
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B5/3954 , G11B5/3967 , G11B2005/3996 , H01F10/32 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121
摘要： An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including an (AB) 2 O x layer, wherein: 0 denotes an oxygen atom; 2.8 t = (Ra+Ro) / (√2•(Rb+Ro)) (where Ra, Rb and Ro denote the ion radii of the atoms A, B and O, respectively)
satisfies 0.8摘要翻译： 交换耦联薄膜的本发明包括其被设置成与所述铁磁性层为钉扎铁磁性层的磁化方向，该锁定层包括（AB）2 O x层，worin一个铁磁层和钉扎层全部：0表示 到氧原子; 2.8
（其中Ra，Rb和滚装表示原子A，B和O的离子半径分别为> SATIS外资企业0.8 -
8.发明授权
公开(公告)号：EP0905802B1
公开(公告)日：2004-11-24
申请号：EP98118338.7
申请日：1998-09-28
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10
-
9.发明公开
公开(公告)号：EP1033764A2
公开(公告)日：2000-09-06
申请号：EP00104409.8
申请日：2000-03-02
发明人： Sakakima, Hiroshi , Sugita, Yasunari , Satomi, Mitsuo , Kawawake, Yasuhiro , Hiramoto, Masayoshi , Matsukawa, Nozomu
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B5/3925 , G11B2005/3996 , H01F10/3268 , H01F41/18 , H01F41/302 , H01L43/08
摘要： A magnetoresistance effect element (100) includes a free layer (5), in which a magnetization direction thereof is easily rotated in response to an external magnetic field, a first non-magnetic layer (4), and a first pinned layer (3) provided on a side opposite to the free layer of the first non-magnetic layer (4), in which a magnetization direction of the first pinned layer (3) is not easily rotated in response to the external magnetic field. At least one of the first pinned layer (3) and the free layer (5) includes a first metal magnetic film (32) contacting the first non-magnetic layer (4), and a first oxide magnetic film (31).
摘要翻译： 的磁致电阻效应元件（100）包括自由层（5），其中磁化方向被很容易地在外部磁场而旋转，响应于，一第一非磁性层（4），并且第一被钉扎层（3） 设置在相反的一侧的第一非磁性层（4），其中，所述第一被钉扎层（3）的磁化方向不响应于外部磁场容易地旋转的自由层。 第一钉扎层（3）和自由层（5）中的至少一个包括第一金属磁性电影（32）接触所述第一非磁性层（4），并且第一氧化物磁性薄膜 - （31）。
-
10.发明公开Magnetoresistance effect device, magnetoresistance head and method for producing magnetoresistance effect device 有权Magnetowiderstandseffektvorrichtung，magnetoresistive Kopf und Verfahren zur Herstellung einer Magnetowiderstandseffektvorrichtung
公开(公告)号：EP0905802A2
公开(公告)日：1999-03-31
申请号：EP98118338.7
申请日：1998-09-28
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10
摘要： A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an α-Fe 2 O 3 film. A surface roughness of the multilayer film is about 0.5 nm or less.
摘要翻译： 本发明的磁阻效应器件包括多层膜。 多层膜包括反铁磁性膜，第一铁磁性膜，非磁性膜和第二铁磁性膜，其以直接或经由下层在非磁性基板上依次设置。 反铁磁膜包含α-Fe2O3膜。 多层膜的表面粗糙度为约0.5nm以下。
-
-
-
-
-
-
-
-
-
搜索结果
16 条记录 (耗时 0.015 秒)
