公开(公告)号：EP3192106B1

公开(公告)日：2018-10-24

申请号：EP15762594.8

申请日：2015-09-09

申请人： Thales ,  Centre National de la Recherche Scientifique

发明人： CROS, Vincent ,  VAN HORNE, Noah ,  SAMPAIO, Joao ,  FERT, Albert ,  REYREN, Nicolas

IPC分类号： H01L43/00 ,  H01F10/32 ,  G11C11/16 ,  G11C11/18 ,  B82Y25/00

CPC分类号： H01F10/324 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/18 ,  H01F10/325 ,  H01L43/00 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

公开(公告)号：EP1563509B1

公开(公告)日：2011-03-09

申请号：EP03774483.6

申请日：2003-09-19

申请人： THE OHIO STATE UNIVERSITY

发明人： EPSTEIN, Arthur, J.

IPC分类号： G11C11/16 ,  G01R33/09

CPC分类号： H01F10/3213 ,  B82Y25/00 ,  G01R33/06 ,  G01R33/09 ,  G11C11/16 ,  H01F10/193 ,  H01F10/324 ,  Y10S977/932

摘要： A spin driven resistor comprising a magnetic body whose resistance increases due to resonance when subjected to an externally applied magnetic field while in the presence of an externally applied electromagnetic field is presented. The spin driven resistor has applications in a variety of spintronic devices including read heads and detectors that are very fast and operate and low power. The spin driven resistor may also be used to modulate spin value, spin tunnel junction, spin-LED, and spin-transistor devices by exposing device to an electromagnetic field and a magnetic field.

公开(公告)号：EP1505610B1

公开(公告)日：2009-02-18

申请号：EP04254423.9

申请日：2004-07-23

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Fukuzawa, Hideaki c/o Intellectual Prop.Div. ,  Hiromi, Yuasa c/o Intellectual Prop.Div. ,  Susumu, Hashimoto c/o Intellectual Prop.Div. ,  Hitoshi, Iwasaki c/o Intellectual Prop.Div.

IPC分类号： H01F10/32 ,  G11B5/39 ,  G11B5/00

CPC分类号： H01F10/324 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/3259 ,  H01F10/3268

公开(公告)号：EP1437747B1

公开(公告)日：2007-11-28

申请号：EP04250030.6

申请日：2004-01-06

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Lee, Kyung-jin 824-805 Byeokjeokgol 8 danji Apt. ,  Park, Wan-jun 19-408 Cheongsil Apt.

IPC分类号： H01F10/32 ,  G11C11/16

CPC分类号： B82Y25/00 ,  H01F10/324

公开(公告)号：EP1797496A1

公开(公告)日：2007-06-20

申请号：EP05779338.2

申请日：2005-09-19

申请人： Koninklijke Philips Electronics N.V.

发明人： VAN ZON, Hans ,  RUIGROK, Jaap ,  VAN DER HOEVEN, Jan, C.

IPC分类号： G06F3/033 ,  G01R33/09 ,  G06K11/00 ,  G05G9/047 ,  H01L43/08 ,  H01F10/32 ,  G01B7/00 ,  G01L9/00 ,  G11B9/00 ,  G11B5/39 ,  G01D5/12

CPC分类号： G01R33/096 ,  B82Y25/00 ,  G01D5/147 ,  G01L1/14 ,  G01L5/223 ,  G01R33/093 ,  G05G2009/04755 ,  G11B5/39 ,  H01F10/324 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/1815 ,  H03K2217/96011 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A magnetic sensor has a magnet (30) and a magneto-resistive element (20), arranged on a substrate such that magnetic field lines through the magneto-resistive element are substantially parallel to a plane of the substrate. Movement of a movable magnetically permeable element (40) near the substrate is detected as it alters the number of field lines through the element. It can be more sensitive than devices arranged with perpendicular field lines, and can be easier to manufacture and integrate. Applications include analog pointers, pressure sensors and microphones. It can use magnets placed either side of the element to detect changes in size of a gap above the element. As the gap closes, less of the parallel oriented field passes through the magneto resistive element.

公开(公告)号：EP1492134A3

公开(公告)日：2006-03-15

申请号：EP04253703.5

申请日：2004-06-21

申请人： Hitachi Global Storage Technologies Netherlands B.V.

发明人： Doerner, Mary Frances ,  Fullerton, Eric Edward

IPC分类号： H01F10/32 ,  G11B5/66 ,  G11B5/39 ,  G01R33/09 ,  H01L43/08 ,  G11C11/15

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/66 ,  G11B2005/001 ,  G11C11/15 ,  H01F10/324 ,  H01L43/10 ,  Y10T428/12875 ,  Y10T428/12931 ,  Y10T428/2495

摘要： The invention is a magnetic device, i.e., a magnetoresistive sensor or a magnetic tunnel junction device, that has a ferromagnetic structure of two ferromagnetic layers antiferromagnetically coupled together with an improved antiferromagnetically coupling (AFC) film. The AFC film is an alloy of Ru 100-x Fe x where x is between approximately 10 and 60 atomic percent. This AFC film increases the exchange coupling by up to a factor or two and has an hcp crystalline structure making it compatible with Co alloy ferromagnetic layers.

公开(公告)号：EP1492087A2

公开(公告)日：2004-12-29

申请号：EP04010377.2

申请日：2004-04-30

申请人： Hitachi Global Storage Technologies B. V.

发明人： Doerner, Mary F. ,  Fullerton, Eric Edward

IPC分类号： G11B5/66 ,  H01F41/30 ,  H01F10/32

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/656 ,  G11B5/66 ,  H01F10/324 ,  H01F41/306

摘要： A magnetic recording disk has a ferromagnetic structure of two ferromagnetic layers antiferromagnetically coupled together with an improved antiferromagnetically coupling (AFC) film. The AFC film is an alloy of Ru 100-x Fe x where x is between approximately 10 and 60 atomic percent. This AFC film increases the exchange coupling by up to a factor or two and has an hcp crystalline structure making it compatible with Co alloy ferromagnetic layers.

摘要翻译： 磁记录盘包括彼此反铁磁耦合的两个铁磁膜和位于两个铁磁膜之间的反铁磁耦合膜。 反铁磁耦合膜由钌和铁的合金形成，铁磁膜由钴合金形成。 盘还包括非磁性间隔膜。

公开(公告)号：EP1288958A3

公开(公告)日：2003-07-09

申请号：EP02019369.4

申请日：2002-08-29

申请人： CANON KABUSHIKI KAISHA

发明人： Ikeda, Takashi

IPC分类号： G11C11/15 ,  H01F10/12 ,  H01F10/32 ,  G11C11/16

CPC分类号： B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/135 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3281 ,  H01F10/3286 ,  Y10T428/1121 ,  Y10T428/12958

摘要： A magnetoresistive film of a structure comprising a non-magnetic film being put between magnetic films. At least one of the magnetic films is a perpendicular magnetic anisotropy film including a rate earth metal, Fe and Co as main ingredients. And, composition of Co to Fe and Co is within a range from 8 atomic percent to 97 atomic percent both inclusive. A memory comprises a plurality of magnetoresistive films described in the above as memory elements; unit for recording information in the magnetoresistive films; and unit for reading the information recorded in the magnetoresistive films.

公开(公告)号：EP1279176A2

公开(公告)日：2003-01-29

申请号：EP01928727.5

申请日：2001-04-20

申请人： MOTOROLA, INC.

发明人： CHEN, Eugene, Youjun ,  DURLAM, Mark ,  TEHRANI, Saied, N. ,  DEHERRERA, Mark ,  KERSZYKOWSKI, Gloria ,  KYLER, Kelly, Wayne

IPC分类号： H01F10/32 ,  H01F41/30

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F10/324 ,  H01F41/302 ,  H01L43/12 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052 ,  Y10T428/24917

摘要： An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14), a second electrode (18) and a spacer layer (16). The first electrode (14) and the second electrode (18) include ferromagnetic layers (26 & 28). A spacer layer (16) is located between the ferromagnetic layer (26) of the first electrode (14) and the ferromagnetic layer (28) of the second electrode (16) for permitting tunneling current in a direction generally perpendicular to the ferromagnetic layers (26 & 28). The device includes insulative veils (34) characterized as electrically isolating the first electrode (14) and the second electrode (18), the insulative veils (34) including non-magnetic and insulating dielectric properties. Additionally disclosed is a method of fabricating the magnetic element (10) with insulative veils (34) that have been transformed from having conductive properties to insulative properties through oxygen plasma ashing techniques.

公开(公告)号：EP1196925A4

公开(公告)日：2002-08-28

申请号：EP00947641

申请日：2000-06-16

申请人： NVE CORP

发明人： DAUGHTON JAMES M ,  POHM ARTHUR V

IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C13/00

CPC分类号： G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/15 ,  G11C11/1675 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/302 ,  H01L27/222

摘要： A ferromagnetic thin-film based digital memory (Fig.1) having in a bit structure (17, 17') a coupled moment material film (13, 14, 14', 14'') in which magnetic moments of adjacent atoms, ions or molecules are coupled to one another to maintain some alignment thereof below a critical temperature above which such alignment is not maintained, and also having a plurality of word line structures (20) each located across from the coupled moment material film (13, 14, 14', 14'') in a corresponding one of the bit structures (17, 17'). The bit structures (17, 17') are sufficiently thermally isolated to allow currents in the adjacent word lines (20) and/or the bit structure (17, 17') to heat the bit structure (17, 17') to approach the critical temperature which may be supplied coincidently and then reduced to cool the bit structure (17, 17') while supplying a magnetic field during the cooling.