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    Method for fabricating a bipolar transistor and a MISFET semiconductor device
    2.
    发明公开
    Method for fabricating a bipolar transistor and a MISFET semiconductor device 有权
    Herstellungsverfahrenfüreinen双极晶体管和MISFET Halbleiter Bauelement

    公开(公告)号：EP1710842A1

    公开(公告)日：2006-10-11

    申请号：EP06012402.1

    申请日：2000-03-14

    申请人： Matsushita Electric Industrial Co., Ltd.

    发明人： Asai, Akira ,  Oonishi, Teruhito ,  Takagi, Takeshi ,  Saitho, Tohru ,  Hara, Yoshihiro ,  Yuki, Koichiro ,  Nozawa, Katsuya ,  Kanzawa, Yoshihiko ,  Katayama, Koji ,  Ichikawa, Yo

    IPC分类号： H01L29/737 ,  H01L21/331 ,  H01L27/06 ,  H01L21/8249

    CPC分类号： H01L29/66242 ,  H01L21/763 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/7378

    摘要： In the method for fabricating a semiconductor device of the present invention, a collector layer of a first conductivity type is formed in a region of a semiconductor substrate sandwiched by device isolation. A collector opening is formed through a first insulating layer deposited on the semiconductor substrate so that the range of the collector opening covers the collector layer and part of the device isolation. A semiconductor layer of a second conductivity type as an external base is formed on a portion of the semiconductor substrate located inside the collector opening, while junction leak prevention layers of the same conductivity type as the external base are formed in the semiconductor substrate. Thus, the active region is narrower than the collector opening reducing the transistor area, while minimizing junction leak.

    摘要翻译： 在本发明的半导体装置的制造方法中，在被器件分离夹持的半导体基板的区域中形成有第一导电型的集电极。 通过沉积在半导体衬底上的第一绝缘层形成集电极开口，使得集电器开口的范围覆盖集电极层和器件隔离的一部分。 在位于集电体开口内部的半导体衬底的一部分上形成作为外部基底的第二导电类型的半导体层，而在半导体衬底中形成与外部基底相同的导电类型的接点防漏层。 因此，有源区域比集电极开口窄，减小晶体管面积，同时最小化结漏电。