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公开(公告)号：EP0701292A2
公开(公告)日：1996-03-13
申请号：EP95118306.0
申请日：1993-06-29
CPC分类号： H01L39/146 , H01L39/228
摘要： A field-effect type superconducting device includes a channel layer (2). The channel layer includes superimposed first and second sub-layers (11, 12) which include respective first and second Bi-based oxide compounds containing Cu. Both source electrode (5) and drain electrode (6) contact the channel layer. A gate insulating film (3) made of insulating material extends on the channel layer. A gate electrode (4, 14, 15, 16) extends on the gate insulating film.
摘要翻译： 场效应型超导器件包括沟道层（2）。 沟道层包括叠加的第一和第二子层（11,12），其包括各自的含Cu的第一和第二Bi基氧化物化合物。 源电极（5）和漏电极（6）都与沟道层接触。 由绝缘材料制成的栅极绝缘膜（3）在沟道层上延伸。 栅极（4,14,15,16）在栅极绝缘膜上延伸。
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2.发明公开
公开(公告)号：EP0577074A2
公开(公告)日：1994-01-05
申请号：EP93110358.4
申请日：1993-06-29
CPC分类号： H01L39/146 , H01L39/228
摘要： A field-effect type superconducting device includes a channel layer (2). The channel layer includes Bi-based oxide compound containing Cu. A source electrode (5) contacts the channel layer. A drain electrode (6) contacts the channel layer. A gate insulating film (3) made of insulating material extends on on the channel layer. A gate electrode (4) extends on the gate insulating film.
Also disclosed is a superconducting device having a control electrode (14) extending on the insulating film (3) and having a constricted portion (50B).摘要翻译： 场效应型超导装置包括沟道层（2）。 沟道层包括含有Cu的Bi基氧化物。 源电极（5）与沟道层接触。 漏电极（6）与沟道层接触。 由绝缘材料制成的栅极绝缘膜（3）在沟道层上延伸。 栅电极（4）在栅极绝缘膜上延伸。 还公开了具有在绝缘膜（3）上延伸并具有收缩部分（50B）的控制电极（14）的超导装置。
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3.发明授权Method for fabricating a bipolar transistor and a MISFET semiconductor device 有权对于双极晶体管和MIS场效应管的半导体装置的制造方法
公开(公告)号：EP1710842B1
公开(公告)日：2008-11-12
申请号：EP06012402.1
申请日：2000-03-14
发明人： Asai, Akira , Oonishi, Teruhito , Takagi, Takeshi , Saitho, Tohru, Matsushita Elec. Ind. Co., Ltd. , Hara, Yoshihiro , Yuki, Koichiro, c/o Matsushita Elec.Ind. Co., Ltd. , Nozawa, Katsuya , Kanzawa, Yoshihiko, Matsushita El. Ind. Co.,Ltd. , Katayama, Koji , Ichikawa, Yo
IPC分类号： H01L29/737 , H01L21/331 , H01L27/06 , H01L21/8249
CPC分类号： H01L29/66242 , H01L21/763 , H01L21/8249 , H01L27/0623 , H01L29/7378
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4.发明公开Method for fabricating a bipolar transistor and a MISFET semiconductor device 有权Herstellungsverfahrenfüreinen双极晶体管和MISFET Halbleiter Bauelement
公开(公告)号：EP1710842A1
公开(公告)日：2006-10-11
申请号：EP06012402.1
申请日：2000-03-14
发明人： Asai, Akira , Oonishi, Teruhito , Takagi, Takeshi , Saitho, Tohru , Hara, Yoshihiro , Yuki, Koichiro , Nozawa, Katsuya , Kanzawa, Yoshihiko , Katayama, Koji , Ichikawa, Yo
IPC分类号： H01L29/737 , H01L21/331 , H01L27/06 , H01L21/8249
CPC分类号： H01L29/66242 , H01L21/763 , H01L21/8249 , H01L27/0623 , H01L29/7378
摘要： In the method for fabricating a semiconductor device of the present invention, a collector layer of a first conductivity type is formed in a region of a semiconductor substrate sandwiched by device isolation. A collector opening is formed through a first insulating layer deposited on the semiconductor substrate so that the range of the collector opening covers the collector layer and part of the device isolation. A semiconductor layer of a second conductivity type as an external base is formed on a portion of the semiconductor substrate located inside the collector opening, while junction leak prevention layers of the same conductivity type as the external base are formed in the semiconductor substrate. Thus, the active region is narrower than the collector opening reducing the transistor area, while minimizing junction leak.
摘要翻译： 在本发明的半导体装置的制造方法中，在被器件分离夹持的半导体基板的区域中形成有第一导电型的集电极。 通过沉积在半导体衬底上的第一绝缘层形成集电极开口，使得集电器开口的范围覆盖集电极层和器件隔离的一部分。 在位于集电体开口内部的半导体衬底的一部分上形成作为外部基底的第二导电类型的半导体层，而在半导体衬底中形成与外部基底相同的导电类型的接点防漏层。 因此，有源区域比集电极开口窄，减小晶体管面积，同时最小化结漏电。
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公开(公告)号：EP0517148B1
公开(公告)日：1996-03-20
申请号：EP92109241.7
申请日：1992-06-02
发明人： Ichikawa, Yo , Setsune, Kentaro , Adachi, Hideaki
CPC分类号： H01L39/2435 , C23C14/0021 , C23C14/087 , C30B23/02 , C30B29/22 , C30B29/225 , H01L39/128
摘要： Bi-Ti-O or Bi-W-O thin film of stable crystal phase is manufactured by forming a Bi-Ti-O of Bi-W-O thin film periodically in an environment including activated oxygen. A layered structure of Bi-Sr-Ca-Cu-O thin films and Bi-Ti-O or Bi-W-O thin films is manufactured by forming a Bi-Ti-O of Bi-W-O thin film periodically in an environment including activated oxygen. A stable superconductor thin film of high superconducting transition temperature is manufactured reproducibly by layering alternately a layered oxide superconductor thin film of Tl-Ba-Ca-Cu-O system and a Bi-W-O insulator thin film.
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公开(公告)号：EP0517148A1
公开(公告)日：1992-12-09
申请号：EP92109241.7
申请日：1992-06-02
发明人： Ichikawa, Yo , Setsune, Kentaro , Adachi, Hideaki
CPC分类号： H01L39/2435 , C23C14/0021 , C23C14/087 , C30B23/02 , C30B29/22 , C30B29/225 , H01L39/128
摘要： Bi-Ti-O or Bi-W-O thin film of stable crystal phase is manufactured by forming a Bi-Ti-O of Bi-W-O thin film periodically in an environment including activated oxygen. A layered structure of Bi-Sr-Ca-Cu-O thin films and Bi-Ti-O or Bi-W-O thin films is manufactured by forming a Bi-Ti-O of Bi-W-O thin film periodically in an environment including activated oxygen.
A stable superconductor thin film of high superconducting transition temperature is manufactured reproducibly by layering alternately a layered oxide superconductor thin film of Tl-Ba-Ca-Cu-O system and a Bi-W-O insulator thin film.-
公开(公告)号：EP0701292B1
公开(公告)日：2000-05-03
申请号：EP95118306.0
申请日：1993-06-29
CPC分类号： H01L39/146 , H01L39/228
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公开(公告)号：EP0640994B1
公开(公告)日：1997-05-07
申请号：EP94116712.4
申请日：1992-06-02
发明人： Ichikawa, Yo , Setsune, Kentaro , Adachi, Hideaki
CPC分类号： H01L39/2435 , C23C14/0021 , C23C14/087 , C30B23/02 , C30B29/22 , C30B29/225 , H01L39/128
摘要： Bi-Ti-O or Bi-W-O thin film of stable crystal phase is manufactured by forming a Bi-Ti-O of Bi-W-O thin film periodically in an environment including activated oxygen. A layered structure of Bi-Sr-Ca-Cu-O thin films and Bi-Ti-O or Bi-W-O thin films is manufactured by forming a Bi-Ti-O of Bi-W-O thin film periodically in an environment including activated oxygen. A stable superconductor thin film of high superconducting transition temperature is manufactured reproducibly by layering alternately a layered oxide superconductor thin film of Tl-Ba-Ca-Cu-O system and a Bi-W-O insulator thin film.
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公开(公告)号：EP0577074A3
公开(公告)日：1994-05-11
申请号：EP93110358.4
申请日：1993-06-29
CPC分类号： H01L39/146 , H01L39/228
摘要： A field-effect type superconducting device includes a channel layer (2). The channel layer includes Bi-based oxide compound containing Cu. A source electrode (5) contacts the channel layer. A drain electrode (6) contacts the channel layer. A gate insulating film (3) made of insulating material extends on on the channel layer. A gate electrode (4) extends on the gate insulating film. Also disclosed is a superconducting device having a control electrode (14) extending on the insulating film (3) and having a constricted portion (50B).
摘要翻译： 场效应型超导装置包括沟道层（2）。 沟道层包括含有Cu的Bi基氧化物。 源电极（5）与沟道层接触。 漏电极（6）与沟道层接触。 由绝缘材料制成的栅极绝缘膜（3）在沟道层上延伸。 栅电极（4）在栅极绝缘膜上延伸。 还公开了具有在绝缘膜（3）上延伸并具有收缩部分（50B）的控制电极（14）的超导装置。
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10.发明公开Thin-film superconductor and method of fabricating the same 失效SupraleitendedünneSchicht und ihr Herstellungsverfahren。
公开(公告)号：EP0590560A2
公开(公告)日：1994-04-06
申请号：EP93115542.8
申请日：1993-09-27
CPC分类号： H01L39/2461 , Y10S428/93 , Y10S505/702
摘要： A thin-film superconductor includes a substrate (1), a ferroelectric film (2), and a superconducting oxide film (3). The ferroelectric film extends on the substrate. The ferroelectric film is made of a crystal containing Bi and O. The superconducting oxide film extends on the ferroelectric film, and containing Bi, Cu, and an alkaline-earth metal element. The superconducting oxide film may contain at least two different alkaline-earth metal elements.
摘要翻译： 薄膜超导体包括基板，铁电体膜和超导氧化物膜。 铁电膜在基板上延伸。 铁电体膜由含有Bi和O的晶体制成。超导氧化物膜在铁电体膜上延伸，并含有Bi，Cu和碱土金属元素。 超导氧化物膜可以含有至少两种不同的碱土金属元素。
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