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公开(公告)号：EP4406382A1
公开(公告)日：2024-07-31
申请号：EP22785714.1
申请日：2022-09-14
发明人： PARKIN, Stuart S.P. , YANG, See-Hun , PI, Unghwan , JEONG, Jaewoo
CPC分类号： G11C11/161 , H10N50/80 , H10N50/10 , H10N50/01
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公开(公告)号：EP4155820A1
公开(公告)日：2023-03-29
申请号：EP21198307.7
申请日：2021-09-22
摘要： The present invention relates to an improved multi-photon lithography process, which allows verification and control of the result of the lithography process while the process is running (real-time verification and control) and optionally full 3D digital reconstruction of the final fabricated structure.
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3.发明公开
公开(公告)号：EP4360090A1
公开(公告)日：2024-05-01
申请号：EP22737387.5
申请日：2022-06-15
CPC分类号： G11C11/161 , G11C11/18 , G11C11/1675
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公开(公告)号：EP4009388A1
公开(公告)日：2022-06-08
申请号：EP20211531.7
申请日：2020-12-03
发明人： PARKIN, Stuart S.P.
IPC分类号： H01L43/12 , H01L43/10 , H01L45/00 , H01F10/193
摘要： A method of making mesosurfaces, allowing for realising smaller and more complex structures and for a dynamic reversible modification thereof, comprises contacting a defined and delineated surface area of a substrate with a liquid which reacts with the substrate material to bring about a transition between at least two stable states of an electron spin property within the area only, in particular by local ionic liquid gating between insulating antiferromagnetic SrCoO 2.5 and metallic ferromagnetic SrCoO 3 .
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公开(公告)号：EP4405752A1
公开(公告)日：2024-07-31
申请号：EP22786324.8
申请日：2022-09-14
CPC分类号： G03F7/0037 , G03F7/2053 , G03F7/70383 , G03F7/70416 , B33Y10/00 , B29C64/135 , B29C64/273 , B33Y70/00
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公开(公告)号：EP4009370A1
公开(公告)日：2022-06-08
申请号：EP20211819.6
申请日：2020-12-04
申请人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. , Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
摘要： A magnetic racetrack memory array device is disclosed which includes a racetrack layer on a magnetic tunnel junction (MTJ) layer over a metallization layer on a substrate. This approach allows for the manufacture of racetrack layers without damaging these layers during MTJ patterning.
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7.发明公开
公开(公告)号：EP4369883A1
公开(公告)日：2024-05-15
申请号：EP22206549.2
申请日：2022-11-10
发明人： PARKIN, Stuart S.P.
摘要： The present disclosure relates to a Racetrack (RT) memory, comprising a racetrack layer and at least one reading element, wherein the reading element comprises a polarity-reversible Josephson supercurrent diode (= JJ).
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8.发明公开
公开(公告)号：EP4109453A1
公开(公告)日：2022-12-28
申请号：EP21181124.5
申请日：2021-06-23
摘要： The present invention pertains to a method for switching magnetic moments in a magnetic material, comprising the steps of:
a) heating a system comprising
- a layer of the magnetic material and
- a layer of a metal which is in contact with one surface of the magnetic material layer, thus forming an interface with the magnetic material layer
to at least 1 to 100 K above the blocking temperature of the magnetic material,
b) applying current pulses to the system, at least at a point in time when the system is heated to at least 1 to 100 K above the blocking temperature of the magnetic material, wherein the current pulses have a current pulse fall time, thereby generating a spin texture in the magnetic material layer and
c) then cooling the system to a temperature of below the blocking temperature at a cooling rate which is greater than the current pulses fall time, thereby setting the spin texture in the magnetic layer.-
9.发明公开
公开(公告)号：EP3916728A1
公开(公告)日：2021-12-01
申请号：EP20176531.0
申请日：2020-05-26
摘要： The present invention relates to a magnetic domain wall displacement type memory cell (racetrack memory device), comprising a 4d or 5d metal dusting layer (DL) at the ferromagnetic/heavy metal interface of the ferromagnetic (FM) structure or the synthetic antiferromagnetic (SAF) structure of the basic racetrack device structure.
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