PROCESS FOR FILLING ETCHED HOLES
    3.
    发明公开
    PROCESS FOR FILLING ETCHED HOLES 审中-公开
    填充蚀刻孔的过程

    公开(公告)号:EP3259134A1

    公开(公告)日:2017-12-27

    申请号:EP16702736.6

    申请日:2016-02-03

    Abstract: A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole; (ii) reflowing the first polymer; (iii) exposing the wafer substrate to a controlled oxidative plasma; (iv) optionally repeating steps (i) to (iii); (v) depositing a layer of a photoimageable second polymer; (vi) selectively removing the second polymer from regions outside a periphery of the holes using exposure and development; and (vii) planarizing the frontside surface to provide holes filled with a plug comprising the first and second polymers, which are different than each other. Each plug has a respective upper surface coplanar with the frontside surface.

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