公开(公告)号：EP2186120A1

公开(公告)日：2010-05-19

申请号：EP08797152.9

申请日：2008-08-04

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： KOMMERA, Swaroop K. ,  BHOWMIK, Siddhartha ,  ORAM, Richard, J. ,  RAMAMOORTHI, Sriram ,  BRAUN, David, M.

IPC: H01L21/302

CPC classification number: B81C1/00087 ,  B41J2/16 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1634 ,  B81B2201/052 ,  H01L21/76898

Abstract: A slot (18) is formed that reaches through a first side (21) of a silicon substrate (12) to a second side of the silicon substrate (12). A trench (15) is laser patterned. The trench (15) has a mouth at the first side (21) of the silicon substrate (12). The trench (15) does not reach the second side of the silicon substrate (12). the trench (15) is dry etched until a depth of at least a portion of the trench (15) is extended approximately to the second side of the silicon substrate (12). A wet etch is performed to complete formation of the slot (18). the wet etch etches silicon from all surfaces of the trench (15).

公开(公告)号：EP1294635A1

公开(公告)日：2003-03-26

申请号：EP01927492.7

申请日：2001-05-02

Applicant: Silverbrook Research Pty. Limited

Inventor： SILVERBROOK, Kia,Silverbrook Research Pty Ltd

IPC: B81B3/00 ,  B81C1/00 ,  B41J2/045

CPC classification number: B41J2/1645 ,  B41J2/14427 ,  B41J2/1623 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1648 ,  B81B3/007 ,  B81B2201/031 ,  B81B2201/036 ,  B81B2201/052 ,  Y10T29/42 ,  Y10T29/49083 ,  Y10T29/49401

Abstract: A thermal bend actuator ( 6 ) is provided with a group of upper arms ( 23, 25, 26 ) and a group of lower arms ( 27, 28 ) which are non planar, so increasing the stiffness of the arms. The arms ( 23, 25, 26,27,28 ) may be spaced transversely of each other and do not overly each other in plan view, so enabling all arms to be formed by depositing a single layer of arm forming material

公开(公告)号：EP0359417A2

公开(公告)日：1990-03-21

申请号：EP89308476.4

申请日：1989-08-22

Applicant: XEROX CORPORATION

Inventor： Hawkins, William G.

IPC: H01L21/308 ,  B41J3/04

CPC classification number: B81C1/00126 ,  B41J2/1601 ,  B41J2/1626 ,  B41J2/1631 ,  B81B2201/052 ,  B81B2203/0338 ,  G02B6/3644 ,  G02B6/3692 ,  H01L21/30608 ,  H01L21/3081 ,  H01L21/3085

Abstract: Three dimensional silicon structures are fabricated from {100} silicon wafers by a single side, multiple step ODE etching process. All etching masks (26, 28) are formed one on top of the other prior to the initiation of etching, with the coarsest mask (28) formed last and used first. Once the coarse anisotropic etching is completed, the coarse mask is removed and the finer anisotropic etching is done. The three dimensional structure may be a thermal ink jet channel plate, in which case the etching process is a two-step process in which the coarse etching step provides the ink reservoir (30) and the fine etching step provides the ink channels (32).

Abstract translation: 通过单面，多步ODE蚀刻工艺由{100}硅晶片制造三维硅结构。 所有蚀刻掩模（26,28）在蚀刻开始之前一个在另一个之上形成，最粗糙的掩模（28）最后形成并首先被使用。 一旦粗大的各向异性蚀刻完成，粗糙掩模被去除，并且进行更精细的各向异性蚀刻。 三维结构可以是热喷墨通道板，在这种情况下，蚀刻工艺是两步法，其中粗蚀刻步骤提供墨储存器（30），并且精细蚀刻步骤提供墨通道（32） 。

公开(公告)号：EP3259134B1

公开(公告)日：2018-08-08

申请号：EP16702736.6

申请日：2016-02-03

Applicant: Memjet Technology Limited

Inventor： NORTH, Angus ,  O'REILLY, Ronan ,  MCAVOY, Gregory

IPC: B41J2/16 ,  B81C1/00

CPC classification number: B81C1/00611 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1645 ,  B81B2201/052 ,  B81B2203/0353 ,  B81C2201/0104 ,  B81C2201/0121

Abstract: A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole; (ii) reflowing the first polymer; (iii) exposing the wafer substrate to a controlled oxidative plasma; (iv) optionally repeating steps (i) to (iii); (v) depositing a layer of a photoimageable second polymer; (vi) selectively removing the second polymer from regions outside a periphery of the holes using exposure and development; and (vii) planarizing the frontside surface to provide holes filled with a plug comprising the first and second polymers, which are different than each other. Each plug has a respective upper surface coplanar with the frontside surface.

公开(公告)号：EP2186120A4

公开(公告)日：2012-12-26

申请号：EP08797152

申请日：2008-08-04

Applicant: HEWLETT PACKARD DEVELOPMENT CO

Inventor： KOMMERA SWAROOP K ,  BHOWMIK SIDDHARTHA ,  ORAM RICHARD J ,  RAMAMOORTHI SRIRAM ,  BRAUN DAVID M

IPC: B41J2/16 ,  B81C1/00

CPC classification number: B81C1/00087 ,  B41J2/16 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1634 ,  B81B2201/052 ,  H01L21/76898

公开(公告)号：EP1580161B1

公开(公告)日：2008-04-09

申请号：EP04019950.7

申请日：2004-08-23

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Gore, Makarand ,  Guo, James

IPC: B81B7/00

CPC classification number: B41J2/16 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  B81B3/0035 ,  B81B2201/047 ,  B81B2201/052 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

公开(公告)号：EP1077475A3

公开(公告)日：2003-04-02

申请号：EP00117155.2

申请日：2000-08-10

Applicant: Applied Materials, Inc.

Inventor： Podlesnik, Dragan V. ,  Chinn, Jeffrey D. ,  Lill, Thorsten B. ,  Pan, Shaoher X. ,  Khan, Anisul ,  Wang, Joan Yiqiong ,  Li, Maocheng

IPC: H01L21/3065 ,  B81C1/00 ,  H01L21/308 ,  H01L21/768

CPC classification number: H01L27/1087 ,  B81B2201/052 ,  B81B2203/0315 ,  B81B2203/033 ,  B81C1/00119 ,  B81C2201/016 ,  H01L21/3065 ,  H01L21/3086

Abstract: The present disclosure pertains to our discovery of a particularly efficient method for etching a multi-part cavity in a substrate. The method provides for first etching a shaped opening, depositing a protective layer over at least a portion of the inner surface of the shaped opening, and then etching a shaped cavity directly beneath and in continuous communication with the shaped opening. The protective layer protects the etch profile of the shaped opening during etching of the shaped cavity, so that the shaped opening and the shaped cavity can be etched to have different shapes, if desired. In particular embodiments of the method of the invention, lateral etch barrier layers and/or implanted etch stops are also used to direct the etching process. The method of the invention can be applied to any application where it is necessary or desirable to provide a shaped opening and an underlying shaped cavity having varying shapes. The method is also useful whenever it is necessary to maintain tight control over the dimensions of the shaped opening.

公开(公告)号：EP1199174A1

公开(公告)日：2002-04-24

申请号：EP01308476.9

申请日：2001-10-03

Applicant: Xerox Corporation

Inventor： Kubby, Joel A. ,  Eklund, Elliott A. ,  Gulvin, Peter M.

IPC: B41J2/14

CPC classification number: F04B43/043 ,  B41J2/14314 ,  B81B3/0051 ,  B81B2201/036 ,  B81B2201/045 ,  B81B2201/052 ,  B81B2203/0127 ,  B81B2203/053

Abstract: An electrostatic injet head (10) having an inner structure (56) on the bottom of the top (53) of the membrane (50) for isolating it for the conductor (40), and an outer structure (58), away from the center of the membrane (50), on the bottom of the top (53) of the membrane (50) to stop excessive flexing of the membrane (50) leading to inter-electrode contact. The invention can be used in various silicon-based actuators, including fluid pumps and optical switching devices.

Abstract translation: 在所述膜（50）的顶部（53）的底部具有用于将所述导体（40）隔离的内部结构（56）的静电喷射头（10）和远离所述导体（40）的外部结构（58） 在膜（50）的顶部（53）的底部上的膜（50）的中心，以阻止膜（50）的过度弯曲，导致电极间接触。 本发明可用于各种基于硅的致动器，包括流体泵和光学开关装置。

公开(公告)号：EP0886307A2

公开(公告)日：1998-12-23

申请号：EP98111247.7

申请日：1998-06-18

Applicant: CANON KABUSHIKI KAISHA

Inventor： Ohkuma, Norio

IPC: H01L21/306 ,  B41J2/00

CPC classification number: B81C1/00087 ,  B41J2/16 ,  B41J2/1629 ,  B41J2/1642 ,  B81B2201/052

Abstract: A method of Si anisotropic etching makes it possible to relax the restrictions imposed upon the processing configuration of an Si substrate provided with the 〈100〉 plane orientation. This Si anisotropic etching method can be preferably used for the formation of the ink supply opening of an ink jet head, for example. When an Si material (Si substrate) having the 〈100〉 crystal plane orientation is processed by this anisotropic etching method, it is arranged to give heat treatment to such Si material in advance before etching. Thus, the processed section can be obtained in a bent configuration formed by the two 〈111〉 planes of crystal plane orientation. Therefore, the etching initiation surface is made smaller than that needed for the conventional art even when the same width should be obtained for a penetrating process, hence making a chip smaller accordingly for the reduction of costs.

Abstract translation: 硅的各向异性蚀刻的方法，使得可以缓和在Si的处理配置所施加的限制基片设置有与郎＆100响面取向。 该Si各向异性蚀刻方法，可以优选地用于喷墨头的供墨开口的形成中，例如。 当具有与郎＆100响与晶面取向Si材料（Si衬底）由该各向异性蚀刻方法处理，它被布置成给热处理蚀刻之前预先求Si材料。 因此，经处理的部分可以在由两个＆郎＆111＆形成的弯曲结构而获得响＆晶面取向的平面。 因此，蚀刻引发表面是由比所需要的现有技术，即使在相同的宽度应当获得用于穿透过程，因此制造更小的芯片为相应的成本的降低更小。

公开(公告)号：EP2448678B1

公开(公告)日：2018-10-03

申请号：EP10732736.3

申请日：2010-07-02

Applicant: Cambridge Enterprise Limited

Inventor： BAUER, Wolfgang Andreas ,  HUCK, Wilhelm T. S. ,  FISCHLECHNER, Martin

IPC: B01L3/00 ,  B01F13/00 ,  G01N27/447

CPC classification number: B01L3/502707 ,  B01F17/00 ,  B01J2219/00511 ,  B01J2219/0059 ,  B01J2219/00637 ,  B01J2219/00783 ,  B01J2219/00788 ,  B01J2219/00831 ,  B01J2219/00833 ,  B01J2219/00837 ,  B01J2219/0097 ,  B01L2200/0636 ,  B01L2300/0867 ,  B01L2300/16 ,  B01L2300/161 ,  B05C7/04 ,  B05D7/22 ,  B05D7/222 ,  B81B2201/0214 ,  B81B2201/05 ,  B81B2201/052 ,  B81B2201/058 ,  B81C1/00119 ,  B81C1/00206 ,  Y10T137/8593

Abstract: We describe a method of layer-by-layer deposition of a plurality of layers of material onto the wall or walls of a channel of a microfluidic device, the method comprising: loading a tube with a series of segments of solution, a said segment of solution bearing a material to be deposited; coupling said tube to said microfluidic device; and injecting said segments of solution into said microfluidic device such that said segments of solution pass, in turn, through said channel depositing successive layers of material to perform said layer-by-layer deposition onto said wall or walls of said channel. Embodiments of the methods are particularly useful for automated surface modification of plastic, for example PDMS (Poly(dimethylsiloxane)), microchannels. We also describe methods and apparatus for forming double-emulsions.