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1.发明授权MICROFEATURE WORKPIECE PROCESSING APPARATUS AND METHODS FOR BATCH DEPOSITION OF MATERIALS ON MICROFEATURE WORKPIECES 有权处理装置用于微结构特征具有分离材料对微观结构的特征是包含WORKPIECES充电模式组件和方法
公开(公告)号：EP1660698B1
公开(公告)日：2008-06-04
申请号：EP04781653.3
申请日：2004-08-18
发明人： ZHENG, Lingyi, A. , DOAN, Trung, T. , BREINER, Lyle, D. , PING, Er-Xuan , WEIMER, Ronald, A. , KUBISTA, David, J. , BEAMAN, Kevin, L. , BASCERI, Cem
IPC分类号： C23C16/458
CPC分类号： C23C16/4583 , C23C16/45546 , C23C16/45578 , Y10S206/832
摘要： The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of these apparatus include microfeature workpiece holders that include gas distributors. One exemplary implementation provides a microfeature workpiece holder adapted to hold a plurality of microfeature workpieces. This workpiece holder includes a plurality of workpiece supports and a gas distributor. The workpiece supports are adapted to support a plurality of microfeature workpieces in a spaced-apart relationship to define a process space adjacent a surface of each microfeature workpiece. The gas distributor includes an inlet and a plurality of outlets, with each of the outlets positioned to direct a flow of process gas into one of the process spaces.
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2.发明授权
公开(公告)号：EP1451862B1
公开(公告)日：2009-03-11
申请号：EP02794081.6
申请日：2002-11-27
IPC分类号： H01L21/318 , H01L21/314
CPC分类号： H01L21/3144 , H01L21/3105 , H01L21/3185 , H01L28/40
摘要： A method of forming a capacitor includes forming first capacitor electrode material over a semiconductor substrate. A silicon nitride comprising layer is formed over the first capacitor electrode material. The semiconductor substrate with silicon nitride comprising layer is provided within a chamber. An oxygen comprising plasma is generated remote from the chamber. The remote plasma generated oxygen is fed to the semiconductor substrate within the chamber at a substrate temperature of no greater than 750 °C effective to form a silicon oxide comprising layer over the silicon nitride comprising layer. After the feeding, a second capacitor electrode material is formed over the silicon oxide comprising layer. Methods of forming capacitor dielectric layers are also disclosed.
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3.发明公开MICROFEATURE WORKPIECE PROCESSING APPARATUS AND METHODS FOR BATCH DEPOSITION OF MATERIALS ON MICROFEATURE WORKPIECES 有权处理装置用于微结构特征具有分离材料对微观结构的特征是包含WORKPIECES充电模式组件和方法
公开(公告)号：EP1660698A1
公开(公告)日：2006-05-31
申请号：EP04781653.3
申请日：2004-08-18
发明人： ZHENG, Lingyi, A. , DOAN, Trung, T. , BREINER, Lyle, D. , PING, Er-Xuan , WEIMER, Ronald, A. , KUBISTA, David, J. , BEAMAN, Kevin, L. , BASCERI, Cem
IPC分类号： C23C16/458
CPC分类号： C23C16/4583 , C23C16/45546 , C23C16/45578 , Y10S206/832
摘要： The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of these apparatus include microfeature workpiece holders that include gas distributors. One exemplary implementation provides a microfeature workpiece holder adapted to hold a plurality of microfeature workpieces. This workpiece holder includes a plurality of workpiece supports and a gas distributor. The workpiece supports are adapted to support a plurality of microfeature workpieces in a spaced-apart relationship to define a process space adjacent a surface of each microfeature workpiece. The gas distributor includes an inlet and a plurality of outlets, with each of the outlets positioned to direct a flow of process gas into one of the process spaces.
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4.发明公开
公开(公告)号：EP1451862A2
公开(公告)日：2004-09-01
申请号：EP02794081.6
申请日：2002-11-27
IPC分类号： H01L21/318 , H01L21/314
CPC分类号： H01L21/3144 , H01L21/3105 , H01L21/3185 , H01L28/40
摘要： A method of forming a capacitor includes forming first capacitor electrode material over a semiconductor substrate. A silicon nitride comprising layer is formed over the first capacitor electrode material. The semiconductor substrate with silicon nitride comprising layer is provided within a chamber. An oxygen comprising plasma is generated remote from the chamber. The remote plasma generated oxygen is fed to the semiconductor substrate within the chamber at a substrate temperature of no greater than 750 °C effective to form a silicon oxide comprising layer over the silicon nitride comprising layer. After the feeding, a second capacitor electrode material is formed over the silicon oxide comprising layer. Methods of forming capacitor dielectric layers are also disclosed.
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