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    SELF-STANDING GAN SUBSTRATE, GAN CRYSTAL, METHOD FOR PRODUCING GAN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
    1.
    发明公开
    SELF-STANDING GAN SUBSTRATE, GAN CRYSTAL, METHOD FOR PRODUCING GAN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE 审中-公开
    自支撑SU基板，G晶体，制造SING单晶体的方法以及制造半导体器件的方法

    公开(公告)号：EP3315639A1

    公开(公告)日：2018-05-02

    申请号：EP17194202.2

    申请日：2014-08-07

    申请人： Mitsubishi Chemical Corporation

    发明人： NAGAO, Satoru ,  TSUKADA, Yusuke ,  KAMADA, Kazunori ,  KUBO, Shuichi ,  IKEDA, Hirotaka ,  FUJITO, Kenji ,  FUJISAWA, Hideo ,  MIKAWA, Yutaka ,  MOCHIZUKI, Tae

    IPC分类号： C30B29/40 ,  C30B25/20 ,  C30B25/18 ,  C30B7/10 ,  C30B23/02

    CPC分类号： H01L29/2003 ,  C30B7/105 ,  C30B23/025 ,  C30B25/186 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254

    摘要： The present application relates to a self-standing GaN substrate with an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, preferably having (i) an defect increasing zone extending in a direction intersecting an A-plane on the principal surface, wherein:
    the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more;
    when a region excluding a portion at a distance of 2 mm or less from a substrate end surface, of the principal surface, is assumed to be an effective region, an X-ray rocking curve full-width at half-maximum of a (300) plane on a longest intersection line formable by the principal surface and an A-plane in the effective region is less than 100 arcsec, or in case of (i) an X-ray rocking curve full-width at half-maximum of a (300) plane on a longest intersection line formable by the principal surface and the A-plane in the effective region is less than 100 arcsec in a portion excluding the defect increasing zone; and
    a variation width of the X-ray rocking curve full-width at half-maximum of a (300) plane on the longest intersection line is less than 20 arcsec, or in the case of (i) a variation width of the X-ray rocking curve full-width at half-maximum of a (300) plane on the longest intersection line is less than 20 arcsec in a portion excluding the defect increasing zone.

    摘要翻译： 本发明涉及主面的法线与0度以上且20度以下的m轴之间具有角度的自立式GaN基板，其优选具有（i）在一个方向上延伸的缺陷增加区 其特征在于：主面垂直投影在M面上时的投影像在c轴方向的尺寸为10mm以上， 当假定除主表面的距基板端面的距离为2mm以下的部分的区域为有效区域时，将a（300）的半高的X射线摇摆曲线全宽 ）平面在主表面可形成的最长相交线上，并且有效区域中的A平面小于100角秒，或者（i）在（a）（a）的半值最大值处的X射线摇摆曲线全宽度为 所述有效区域中的能够由所述主面形成的最长的相交线与所述A面所成的平面在所述缺陷增加区域以外的部分小于100arcsec; 并且最长交线上的（300）平面的半高处的X射线摇摆曲线全宽的变化宽度小于20弧秒，或者在（i） 最长相交线上的（300）平面的半最大值的X射线摇摆曲线全宽度在除缺陷增加区域以外的部分中小于20角秒。

    GROUP III-V NITRIDE LAYER AND METHOD FOR PRODUCING THE SAME
    3.
    发明公开
    GROUP III-V NITRIDE LAYER AND METHOD FOR PRODUCING THE SAME 审中-公开
    GRUPPE-III-V-NITRID-SCHICHT UND HERSTELLUNGSVERFAHRENDAFÜR

    公开(公告)号：EP2009148A1

    公开(公告)日：2008-12-31

    申请号：EP07739020.1

    申请日：2007-03-19

    申请人： KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY ,  The University of Tokyo ,  Mitsubishi Chemical Corporation

    发明人： FUJIOKA, Hiroshi ,  KOBAYASHI, Atsushi ,  HORIE, Hideyoshi ,  AMANAI, Hidetaka ,  NAGAO, Satoru

    IPC分类号： C30B29/38 ,  C03B23/08 ,  H01L21/205

    CPC分类号： C23C14/0026 ,  C23C14/0617 ,  C23C14/28 ,  C30B23/02 ,  C30B23/025 ,  C30B29/403 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658

    摘要： There is disclosed a hexagonal Group III-V nitride layer exhibiting high quality crystallinity capable of improving the properties of a semiconductor device such as a light emitting element. This nitride layer is a Group III-V nitride layer belonging to hexagonal crystal formed by growth on a substrate having a different lattice constant, which has a growth-plane orientation of {1-100} and in which a full width at half maximum b 1 of angle dependence of X-ray diffraction intensity in a {1-210} plane perpendicular to the growth-plane upon X ray incident angle from a direction parallel to the growth-plane satisfies the condition of 0.01°≤ b 1 ≤ 0.5°, or the full width at half maximum b 2 of angle dependence of X-ray diffraction intensity in a {0001} plane upon X-ray incident angle from a direction parallel to the growth-plane satisfies the condition of 0.01°≤ b 2 ≤ 0.5°.

    摘要翻译： 公开了能够提高诸如发光元件的半导体器件的性能的显示高质量结晶度的六边形III-V族氮化物层。 该氮化物层是属于六方晶的III-V族氮化物层，其通过在具有不同晶格常数的基板上生长形成，其具有{1-100}的生长面取向，并且其中半峰全宽 从与生长面平行的方向的X射线入射角垂直于生长面的{1-210}面的X射线衍射强度的角度依赖性的1满足条件为0.01°‰b 1‰¤ 或者从与生长面平行的方向的X射线入射角，{0001}面内的X射线衍射强度的角度依赖性的半值的全宽度b 2满足条件为0.01°‰¤ b 2‰¤0.5°。

    PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUFACTURING PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS
    6.
    发明公开
    PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUFACTURING PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS 审中-公开
    METALLNITRIDKRISTALLE来自组13用于生产METALLNITRIDKRISTALLEN从组中13期系统周期的系统和方法

    公开(公告)号：EP2832901A1

    公开(公告)日：2015-02-04

    申请号：EP13768539.2

    申请日：2013-03-29

    申请人： Mitsubishi Chemical Corporation

    发明人： ENATSU, Yuuki ,  NAGAO, Satoru ,  KUBO, Shuichi ,  IKEDA, Hirotaka ,  FUJITO, Kenji

    IPC分类号： C30B29/38 ,  H01L21/205

    CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/14 ,  C30B25/20 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/2003

    摘要： A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6x10 -4 rlu or less.

    摘要翻译： 用非极性或半极性的主面生长的周期表第13族金属氮化物结晶具有许多堆垛层错。 本发明的目的是提供一种周期表第13族金属氮化物结晶worin堆叠这种故障的发生被抑制。 本发明实现了通过一个周期表第13族金属氮化物结晶的上述在于的特征在于，在一个QX方向强度轮廓确实包括最大强度，并从在通过X射线倒易晶格图谱获得等信号等高线图导出（100 周期表第13族金属氮化物结晶的）平面上，以1 /第300次峰强度的QX宽度为6×10 -4重新LO或更小。