METHOD FOR PRODUCING ELECTRONIC DEVICE
    1.
    发明公开

    公开(公告)号:EP4131348A1

    公开(公告)日:2023-02-08

    申请号:EP21780655.3

    申请日:2021-03-05

    IPC分类号: H01L21/56

    摘要: A method for manufacturing an electronic device, the method including at least a preparing step of preparing a structure (100) provided with an adhesive film (50) provided with a base material layer (10), an adhesive resin layer (A) provided on a first surface (10A) side of the base material layer (10) and used for temporarily fixing an electronic component (70), an adhesive resin layer (B) provided on a second surface (10B) side of the base material layer (10), and an unevenness-absorbing resin layer (C) provided between the base material layer (10) and the adhesive resin layer (A) or between the base material layer (10) and the adhesive resin layer (B), and which is able to be cross-linked by an external stimulus, and an electronic component (70) attached to the adhesive resin layer (A) of the adhesive film (50) and having an uneven structure (75), a cross-linking step of cross-linking the unevenness-absorbing resin layer (C) by applying an external stimulus to the unevenness-absorbing resin layer (C) in the structure (100), and a sealing step of sealing the electronic component (70) with a sealing material (60).

    METHOD FOR PRODUCING ELECTRONIC DEVICE
    2.
    发明公开

    公开(公告)号:EP4350741A1

    公开(公告)日:2024-04-10

    申请号:EP22811399.9

    申请日:2022-05-27

    IPC分类号: H01L21/301 C09J7/38

    摘要: A method for manufacturing an electronic device, the method at least including a step (A) of preparing a structure which includes a wafer including a circuit forming surface, and an adhesive film bonded to the circuit forming surface side of the wafer, a step (B) of back-grinding a surface of the wafer on a side opposite to the circuit forming surface side, and a step (C) of irradiating the adhesive film with an ultraviolet ray and then removing the adhesive film from the wafer, in which the adhesive film includes a base material layer, and an adhesive resin layer configured with an ultraviolet curable adhesive resin material, provided on one surface side of the base material layer, regarding the ultraviolet curable adhesive resin material, a storage elastic modulus (100°C) at 100°C when a viscoelastic characteristic is measured by the following procedures (i) and (ii) is 1.0 × 10 6 to 3.5 × 10 7 Pa, and E' (100°C)/E' (-15°C) is 2.0 × 10 -3 to 1.5 × 10 -2 . [Procedures] (i) A film having a film thickness of 0.2 mm is formed using the ultraviolet curable adhesive resin material, the film is irradiated with an ultraviolet ray having a main wavelength of 365 nm at an irradiation intensity of 100 W/cm 2 with an ultraviolet ray amount of 1,080 mJ/cm 2 using a high-pressure mercury lamp in an environment at 25°C for ultraviolet curing, and a cured film is obtained. (ii) A dynamic viscoelasticity of the cured film is measured at a frequency of 1 Hz and a temperature of -50°C to 200°C in a tensile mode.

    ADHESIVE FILM AND ELECTRONIC DEVICE MANUFACTURING METHOD

    公开(公告)号:EP3778816A1

    公开(公告)日:2021-02-17

    申请号:EP19777770.9

    申请日:2019-03-19

    摘要: An adhesive film (50) of the present invention includes a base material layer (10); an adhesive resin layer (A) provided on a first surface (10A) side of the base material layer (10); and an adhesive resin layer (B) provided on a second surface (10B) side of the base material layer (10) and in which an adhesive force is decreased by an external stimulus, in which, as measured by method 1, an integrated tacking force value (F 2.5 ) of the adhesive resin layer (B) is 1.0 gf/sec or more at a test speed of 2.5 mm/min and a test temperature of 130°C, and an integrated tacking force value (F 30 ) of the adhesive resin layer (B) is 7.0 gf/sec or more at a test speed of 30 mm/min and a test temperature of 130°C.
    (method 1) using a tacking tester, a probe is pressed on the adhesive resin layer (B) for 60 seconds under conditions of a probe load of 100 gf and a probe pushing speed of 120 mm/min, then, at a test temperature of 130°C, tack strengths (gf) are respectively measured at test speeds of 2.5 mm/min and 30 mm/min, a measurement time is set as a horizontal axis and the tack strength (gf) is set as a vertical axis, integrated values are each calculated from a point where the tack strength starts to rise from 0 to a point where the tack strength becomes 0 again, and the calculated values are respectively set as F 2.5 and F 30 .

    METHOD FOR PRODUCING ELECTRONIC DEVICE
    4.
    发明公开

    公开(公告)号:EP4350743A1

    公开(公告)日:2024-04-10

    申请号:EP22811400.5

    申请日:2022-05-27

    IPC分类号: H01L21/304 H01L21/301

    摘要: A method for manufacturing an electronic device, the method including a step (A) of preparing a structure which includes a wafer including a circuit forming surface, and an adhesive film bonded to the circuit forming surface side of the wafer, a step (B) of back-grinding a surface of the wafer on a side opposite to the circuit forming surface side, and a step (C) of irradiating the adhesive film with an ultraviolet ray and then removing the adhesive film from the wafer, in which the adhesive film includes a base material layer, and an adhesive resin layer configured with an ultraviolet curable adhesive resin material, provided on one surface side of the base material layer, regarding the ultraviolet curable adhesive resin material, a storage elastic modulus at 5°C E' (5°C) after curing with an ultraviolet ray is 2.0 × 10 6 to 2.0 × 10 9 Pa, and a storage elastic modulus at 100°C E' (100°C) is 1.0 × 10 6 to 3.0 × 10 7 Pa. [Procedure]
    (i) a film having a film thickness of 0.2 mm is formed using the ultraviolet curable adhesive resin material, the film is irradiated with an ultraviolet ray having a main wavelength of 365 nm at an irradiation intensity of 100 W/cm 2 with an ultraviolet ray amount of 1,080 mJ/cm 2 using a high-pressure mercury lamp in an environment at 25°C for ultraviolet curing, and a cured film is obtained,
    (ii) a dynamic viscoelasticity of the cured film is measured at a frequency of 1 Hz and a temperature of -50°C to 200°C in a tensile mode.

    METHOD FOR PRODUCING ELECTRONIC DEVICE
    5.
    发明公开

    公开(公告)号:EP4350742A1

    公开(公告)日:2024-04-10

    申请号:EP22811405.4

    申请日:2022-05-27

    IPC分类号: H01L21/301 C09J7/38

    摘要: A method for manufacturing an electronic device, the method at least including a step (A) of preparing a structure which includes a wafer including a circuit forming surface, and an adhesive film bonded to the circuit forming surface side of the wafer, a step (B) of back-grinding a surface of the wafer on a side opposite to the circuit forming surface side; and a step (C) of removing the adhesive film from the wafer after the adhesive film is irradiated with an ultraviolet ray. Here, the adhesive film includes a base material layer, and an ultraviolet curable adhesive resin layer provided on one surface side of the base material layer using an ultraviolet curable adhesive resin material. In addition, a loss tangent tanδ at -5°C of a cured film of the ultraviolet curable adhesive resin material, which is measured as described in the following [Procedure], is 0.25 to 0.85. [Pressure] (i) A film having a film thickness of 0.2 mm is formed using the ultraviolet curable adhesive resin material, the film is irradiated with an ultraviolet ray having a main wavelength of 365 nm at an irradiation intensity of 100 W/cm 2 with an ultraviolet ray amount of 1080 mJ/cm 2 using a high-pressure mercury lamp in an environment at 25°C for ultraviolet curing, and a cured film is obtained. (ii) A dynamic viscoelasticity of the cured film is measured at a frequency of 1 Hz and a temperature of -50°C to 200°C in a tensile mode.

    METHOD FOR PRODUCING ELECTRONIC DEVICE
    8.
    发明公开

    公开(公告)号:EP4350744A1

    公开(公告)日:2024-04-10

    申请号:EP22811401.3

    申请日:2022-05-27

    IPC分类号: H01L21/304 H01L21/301

    摘要: A method for manufacturing an electronic device, the method at least including a step (A) of preparing a structure which includes a wafer including a circuit forming surface, and an adhesive film bonded to the circuit forming surface side of the wafer, a step (B) of back-grinding a surface of the wafer on a side opposite to the circuit forming surface side, and a step (C) of irradiating the adhesive film with an ultraviolet ray and then removing the adhesive film from the wafer, in which the adhesive film includes a base material layer, and an adhesive resin layer configured with an ultraviolet curable adhesive resin material, provided on one surface side of the base material layer, in the step (C), regarding the adhesive resin layer of the adhesive film after being irradiated with an ultraviolet ray, a storage elastic modulus at 5°C measured under the following conditions, defined as E' (5°C), is 2.0 × 10 6 to 2.0 × 10 9 Pa, and a storage elastic modulus at 100°C E' (100°C) is 1.0 × 10 6 to 3.0 × 10 7 Pa. (Conditions) A dynamic viscoelasticity is measured at a frequency of 1 Hz and a temperature of -50°C to 200°C in a tensile mode.

    ADHESIVE FILM FOR BACKGRINDING, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

    公开(公告)号:EP4349592A1

    公开(公告)日:2024-04-10

    申请号:EP22811398.1

    申请日:2022-05-27

    摘要: A back grinding adhesive film used to protect a surface of a wafer, the back grinding adhesive film including a base material layer, and an adhesive resin layer which is provided on one surface side of the base material layer and configured with an ultraviolet curable adhesive resin material. Here, regarding the ultraviolet curable adhesive resin material, when a storage elastic modulus at -15°C is defined as E' (-15°C) and a storage elastic modulus at 100°C is defined as E' (100°C) in a case where a viscoelastic characteristic is measured by the following procedures (i) and (ii), E' (100°C) is 1.0 × 10 6 to 3.5 × 10 7 Pa, and E' (100°C)/E' (-15°C) is 2.0 × 10 -3 to 1.5 × 10 -2 . [Procedures] (i) A film having a film thickness of 0.2 mm is formed using the ultraviolet curable adhesive resin material, the film is irradiated with an ultraviolet ray having a main wavelength of 365 nm at an irradiation intensity of 100 W/cm 2 with an ultraviolet ray amount of 1,080 mJ/cm 2 using a high-pressure mercury lamp in an environment at 25°C for ultraviolet curing, and a cured film is obtained. (ii) A dynamic viscoelasticity of the cured film is measured at a frequency of 1 Hz and a temperature of -50°C to 200°C in a tensile mode.

    BACK GRINDING ADHESIVE FILM AND METHOD FOR PRODUCING ELECTRONIC DEVICE

    公开(公告)号:EP4349591A1

    公开(公告)日:2024-04-10

    申请号:EP22811396.5

    申请日:2022-05-27

    摘要: A back grinding adhesive film used to protect a surface of a wafer. This adhesive film includes a base material layer, and an adhesive resin layer which is provided on one surface side of the base material layer and configured with an ultraviolet curable adhesive resin material. The ultraviolet curable adhesive resin material satisfies the following characteristic (A) when a viscoelastic characteristic is measured by the following procedures (i) and (ii). [Procedures] (i) A film having a film thickness of 0.2 mm is formed using the ultraviolet curable adhesive resin material, the film is irradiated with an ultraviolet ray having a main wavelength of 365 nm at an irradiation intensity of 100 W/cm 2 with an ultraviolet ray amount of 1,080 mJ/cm 2 using a high-pressure mercury lamp in an environment at 25°C for ultraviolet curing, and a cured film is obtained. (ii) A dynamic viscoelasticity of the cured film is measured at a frequency of 1 Hz and a temperature of -50°C to 200°C in a tensile mode. [Characteristic] (A) A loss tangent tanδ at -5°C is 0.25 to 0.85.