Abstract:
Test circuitry is included in a PROM memory for detecting shorts between bit lines and word lines and shorts or leaks in a memory cell. The circuitry enables a selected positive voltage to be applied across all memory cells in the memory so that the existence of leaky memory cells or shorts in the memory can be detected during testing. The test circuitry has no appreciable effect on the memory during normal operation of the memory.
Abstract:
A unique programming means, suitable for use with programmable read-only memories (PROM), or other circuits utilizing programmable fuses, is provided which overcomes several distinct disadvantages of prior art programming means. The program means of this invention includes a Darlington pair of prgramming transistors which allows only a single programming transistor to be made large in order to carry the large programming current, and only a single high current drive signal need be applied to the single programming transistor, thereby minimizing power consumption and integrated circuit die area.
Abstract:
A circuit is provided which overrides the normal output signal of a sequential logic circuit, and provides an output signal indicative of the logical state of an internal node which is normally accessible via the output terminals of the sequential logic circuit. These output signals are provided to faciliate adequate testing of the sequential logic circuit in a minimum of time.