公开(公告)号：EP1990915A1

公开(公告)日：2008-11-12

申请号：EP07713837.8

申请日：2007-02-06

Applicant: Murata Manufacturing Co. Ltd.

Inventor： KIDO, Shunsuke ,  NAKAO, Takeshi ,  NAKAI, Yasuharu ,  NISHIYAMA, Kenji ,  KADOTA, Michio

IPC: H03H9/145 ,  H03H3/08 ,  H03H9/25

CPC classification number: H03H9/02834 ,  H03H3/10 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155 ,  Y10T29/49165

Abstract: Provided is a surface acoustic wave device in which a temperature characteristic of frequency can be effectively improved without a significant narrowing of a fractional bandwidth and a significant insertion loss.
A surface acoustic wave device 1 includes a piezoelectric substrate 2, at least one interdigital transducer (IDT) electrode 3 formed on the piezoelectric substrate 2, and an insulator layer 6 for improving a temperature characteristic formed so as to cover the IDT electrode 3. When a surface of the insulator layer 6 is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate 2 in at least one portion of the first surface region by 0.001λ or more, where the wavelength of an acoustic wave is λ.

Abstract translation: 提供了一种表面声波装置，其中可以有效地提高频率的温度特性，而不会使分数带宽显着变窄和显着的插入损耗。 表面声波装置1包括压电基板2，形成在压电基板2上的至少一个叉指式换能器（IDT）电极3和用于改善形成为覆盖IDT电极3的温度特性的绝缘体层6.当 绝缘体层6的表面被分为位于IDT电极的第一表面区域和没有IDT电极的第二表面区域，绝缘体层的表面在第二表面区域的至少一部分中 比第一表面区域的至少一部分中的压电基片2的绝缘体层的表面高出0.001λ以上，其中声波的波长为»。

公开(公告)号：EP1990915B1

公开(公告)日：2017-11-01

申请号：EP07713837.8

申请日：2007-02-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： KIDO, Shunsuke ,  NAKAO, Takeshi ,  NAKAI, Yasuharu ,  NISHIYAMA, Kenji ,  KADOTA, Michio

IPC: H03H3/10 ,  H03H9/145 ,  H03H9/25

CPC classification number: H03H9/02834 ,  H03H3/10 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155 ,  Y10T29/49165

公开(公告)号：EP2128982B1

公开(公告)日：2019-01-23

申请号：EP08721995.2

申请日：2008-03-13

Applicant: Murata Manufacturing Co., Ltd.

Inventor： KANDO, Hajime ,  KIDO, Shunsuke ,  NAKAO, Takeshi ,  YAMAMOTO, Daisuke

IPC: H03H9/145 ,  H03H9/02 ,  H03H9/00

公开(公告)号：EP2128982A1

公开(公告)日：2009-12-02

申请号：EP08721995.2

申请日：2008-03-13

Applicant: Murata Manufacturing Co. Ltd.

Inventor： KANDO, Hajime ,  KIDO, Shunsuke ,  NAKAO, Takeshi ,  YAMAMOTO, Daisuke

IPC: H03H9/145

CPC classification number: H03H9/02921 ,  H03H9/0071 ,  H03H9/02858 ,  H03H9/02881 ,  H03H9/14538 ,  H03H9/14594

Abstract: There is provided an acoustic wave element that enables an improvement of resonance characteristics at the vicinity of a resonance frequency and that prevents short-circuit failure between electrode fingers and degradation in insulation properties. In an acoustic wave element (1), an IDT electrode (3) is in contact with a piezoelectric material. The IDT electrode (3) includes a plurality of electrode fingers. The plurality of electrode fingers include first and second electrode fingers (31 and 32) that adjoin each other in an acoustic wave propagation direction and that connect to different potentials and a first dummy electrode finger (34) facing the first electrode finger (31) via a gap (33) placed on an outer side in an electrode finger length direction of the first electrode finger (31). At the vicinity of the gap, first protrusions (11 to 14) are provided in at least one of the first electrode finger (31) and the first dummy electrode finger (34), the first protrusion protruding in the acoustic wave propagation direction from at least one of side edges of the electrode finger.

Abstract translation: 提供了一种声波元件，其能够改善谐振频率附近的谐振特性，并防止电极指之间的短路故障和绝缘特性的劣化。 在声波元件（1）中，IDT电极（3）与压电材料接触。 IDT电极（3）包括多个电极指。 多个电极指包括在声波传播方向上彼此相邻并且连接到不同电势的第一电极指和第二电极指（31和32）以及经由第一电极指（31）与第一电极指（31） 设置在第一电极指（31）的电极指长度方向上的外侧的间隙（33）。 在间隙附近，第一突起（11至14）设置在第一电极指（31）和第一虚设电极指（34）中的至少一个中，第一突起沿着声波传播方向从 电极指的侧边中的至少一个。