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    COMPOSITE PIEZOELECTRIC SUBSTRATE MANUFACTURING METHOD
    2.
    发明授权
    COMPOSITE PIEZOELECTRIC SUBSTRATE MANUFACTURING METHOD 有权
    方法生产压电复合衬底

    公开(公告)号：EP2226934B1

    公开(公告)日：2016-11-30

    申请号：EP08863984.4

    申请日：2008-10-23

    Applicant: Murata Manufacturing Co. Ltd.

    Inventor： KANDO, Hajime ,  YOSHII, Yoshiharu

    IPC: H01L41/312 ,  H01L41/257 ,  H03H3/02 ,  H03H3/08

    CPC classification number: H01L41/27 ,  G02F1/035 ,  H01L41/187 ,  H01L41/25 ,  H01L41/257 ,  H01L41/312 ,  H01L41/335 ,  H01L41/337 ,  H03H3/02 ,  H03H3/08 ,  H03H2003/021 ,  H03H2003/023 ,  H03H2003/027 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

    Abstract: The present invention provides a method for manufacturing a composite piezoelectric substrate capable of forming an ultrathin piezoelectric film having a uniform thickness by efficiently using a piezoelectric material. a) A piezoelectric substrate (2) and a supporting substrate (10) are prepared, b) ions are implanted from a surface (2a) of the piezoelectric substrate (2) to form a defective layer (4) in a region having a predetermined depth from the surface (2a) of the piezoelectric substrate (2), c) impurities adhering to at least one of the surface (2a) of the piezoelectric substrate (2) in which the defective layer (4) is formed and a surface (10a) of the supporting substrate (1) are removed to directly expose the constituent atoms of the surfaces (2a and 10a) and activate them, d) the supporting substrate (10) is bonded to the surface (2a) of the piezoelectric substrate (2) to form a substrate bonded body (40), e) the substrate bonded body (40) is separated at the defective layer (4) formed in the piezoelectric substrate (2) so that a separation layer (3) between the surface (2a) of the piezoelectric substrate (2) and the defective layer (4) is separated from the piezoelectric substrate (2) and bonded to the supporting substrate (10) to form a composite piezoelectric substrate (30), and f) the surface (3a) of the separation layer (3) of the composite piezoelectric substrate (30) is smoothed.

    ELASTIC WAVE DEVICE AND MANUFACTURING METHOD FOR SAME
    3.
    发明公开
    ELASTIC WAVE DEVICE AND MANUFACTURING METHOD FOR SAME 审中-公开
    赫尔辛基维也纳

    公开(公告)号：EP2830216A1

    公开(公告)日：2015-01-28

    申请号：EP13763886.2

    申请日：2013-03-15

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： KANDO, Hajime

    IPC: H03H9/145 ,  H03H3/08 ,  H03H9/25

    CPC classification number: H03H9/25 ,  H01L41/0805 ,  H01L41/083 ,  H01L41/1873 ,  H01L41/253 ,  H01L41/277 ,  H01L41/29 ,  H01L41/312 ,  H01L41/314 ,  H01L41/39 ,  H03H3/10 ,  H03H9/02559 ,  H03H9/02574

    Abstract: An elastic wave device is provided that not only offers an increased acoustic velocity but also is insusceptible to the spurious responses of other wave modes and a method for producing such an elastic wave device. An elastic wave device has a lithium niobate film (5) and uses an SH surface acoustic wave. The elastic wave device (1) has a supporting substrate (2), a high-acoustic-velocity film (3) formed on the supporting substrate (2) and configured so that the acoustic velocity of the propagating bulk wave is higher than the acoustic velocity of the elastic wave that propagates on the lithium niobate film (5), a low-acoustic-velocity film (4) stacked on the high-acoustic-velocity film (3) and configured so that the acoustic velocity of the propagating bulk wave is lower than the acoustic velocity of the bulk wave that propagates in the lithium niobate film (5), the lithium niobate film (5) stacked on the low-acoustic-velocity film (4), and an IDT electrode (6) formed on either side of the lithium niobate film (5). When the lithium niobate film (5) has Euler angles of (0°±5°, θ, 0°), θ is in the range of 0° to 8° and 57° to 180°.

    Abstract translation: 提供了一种弹性波装置，其不仅提供了增加的声速，而且对其他波模的杂散响应也是不可接受的，以及用于制造这种弹性波装置的方法。 弹性波装置具有铌酸锂薄膜（5），并使用SH表面声波。 弹性波装置（1）具有支撑基板（2），形成在支撑基板（2）上的高声速膜（3），构成为传播体波的声速高于声波 在铌酸锂薄膜（5）上传播的弹性波的速度，层叠在高声速膜（3）上的低声速膜（4）构成，使得传播体波的声速 低于在铌酸锂薄膜（5）中传播的体波的声速，叠层在低声速膜（4）上的铌酸锂薄膜（5）和形成在低声速膜 铌酸锂薄膜（5）的两侧。 当铌酸锂薄膜（5）具有（0°±5°，¸，0°）的欧拉角时，¸在0°至8°和57°至180°的范围内。

    BOUNDARY ACOUSTIC WAVE DEVICE
    4.
    发明公开
    BOUNDARY ACOUSTIC WAVE DEVICE 审中-公开
    边界声波装置

    公开(公告)号：EP2023485A1

    公开(公告)日：2009-02-11

    申请号：EP07743195.5

    申请日：2007-05-11

    Applicant: Murata Manufacturing Co. Ltd.

    Inventor： KANDO, Hajime

    IPC: H03H9/25 ,  H01L41/09 ,  H01L41/18 ,  H03H9/145

    CPC classification number: H03H9/0222 ,  H03H9/02834

    Abstract: A boundary acoustic wave device in which a first medium to a fourth medium are laminated and an electrode is disposed between a first medium and a second medium is provided, wherein the boundary acoustic wave device has a small absolute value of temperature coefficient of delay time and good temperature characteristics. A boundary acoustic wave device (1) in which a first medium (11) to fourth medium (14) are laminated in that order and, an electrode including an IDT electrode (16) is disposed at an interface between the first medium (11) and the second medium (12), and in a structure formed by laminating the fourth medium (14)/the second medium (12)/the electrode/the first medium (11), the temperature coefficient of delay time TCD of a boundary acoustic wave takes on a positive value, the fourth medium or the second medium has a positive temperature coefficient of sound velocity TCV, the first medium (11) has a negative temperature coefficient of sound velocity TCV, and the sound velocity of transverse wave of the third medium (13) is specified to be smaller than the sound velocity of transverse wave of the fourth medium (14) and/or the second medium (12).

    Abstract translation: 本发明提供一种弹性边界波装置，其层叠第一介质至第四介质并在第一介质与第二介质之间配置电极，弹性边界波装置的延迟时间温度系数的绝对值小， 良好的温度特性。 在第1介质（11）与第1介质（11）之间的界面上配置有第1介质（11）〜第4介质（14）依次层叠而成的包含IDT电极（16）的电极的弹性边界波装置（1） 和第二介质（12）之间，并且在通过层压第四介质（14）/第二介质（12）/电极/第一介质（11）而形成的结构中，边界声学的延迟时间温度系数TCD 波为正值，第四介质或第二介质具有正的声速温度系数TCV，第一介质（11）具有负的声速温度系数TCV，并且第三介质的横波声速 介质（13）被规定为小于第四介质（14）和/或第二介质（12）的横波的声速。

    COMPOSITE PIEZOELECTRIC SUBSTRATE MANUFACTURING METHOD
    6.
    发明公开
    COMPOSITE PIEZOELECTRIC SUBSTRATE MANUFACTURING METHOD 有权
    VERFAHREN ZUR HERSTELLUNG EINES PIEZOELEKTRISCHEN VERBUNDSUBSTRATS

    公开(公告)号：EP2226934A1

    公开(公告)日：2010-09-08

    申请号：EP08863984.4

    申请日：2008-10-23

    Applicant: Murata Manufacturing Co. Ltd.

    Inventor： KANDO, Hajime ,  YOSHII, Yoshiharu

    IPC: H03H3/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/22 ,  H03H3/02 ,  H03H9/17

    CPC classification number: H01L41/27 ,  G02F1/035 ,  H01L41/187 ,  H01L41/25 ,  H01L41/257 ,  H01L41/312 ,  H01L41/335 ,  H01L41/337 ,  H03H3/02 ,  H03H3/08 ,  H03H2003/021 ,  H03H2003/023 ,  H03H2003/027 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

    Abstract: The present invention provides a method for manufacturing a composite piezoelectric substrate capable of forming an ultrathin piezoelectric film having a uniform thickness by efficiently using a piezoelectric material. a) A piezoelectric substrate (2) and a supporting substrate (10) are prepared, b) ions are implanted from a surface (2a) of the piezoelectric substrate (2) to form a defective layer (4) in a region having a predetermined depth from the surface (2a) of the piezoelectric substrate (2), c) impurities adhering to at least one of the surface (2a) of the piezoelectric substrate (2) in which the defective layer (4) is formed and a surface (10a) of the supporting substrate (1) are removed to directly expose the constituent atoms of the surfaces (2a and 10a) and activate them, d) the supporting substrate (10) is bonded to the surface (2a) of the piezoelectric substrate (2) to form a substrate bonded body (40), e) the substrate bonded body (40) is separated at the defective layer (4) formed in the piezoelectric substrate (2) so that a separation layer (3) between the surface (2a) of the piezoelectric substrate (2) and the defective layer (4) is separated from the piezoelectric substrate (2) and bonded to the supporting substrate (10) to form a composite piezoelectric substrate (30), and f) the surface (3a) of the separation layer (3) of the composite piezoelectric substrate (30) is smoothed.

    Abstract translation: 本发明提供一种能够通过有效地使用压电材料形成具有均匀厚度的超薄压电膜的复合压电基片的制造方法。 a）制备压电基板（2）和支撑基板（10），b）从压电基板（2）的表面（2a）注入离子，在具有预定的区域的区域中形成缺陷层（4） 从压电基板（2）的表面（2a）的深度，c）附着到其中形成有缺陷层（4）的压电基板（2）的表面（2a）中的至少一个的杂质和表面 去除支撑基板（1）的直径10a（10a）以直接暴露表面（2a和10a）的构成原子并激活它们，d）支撑基板（10）结合到压电基板的表面（2a） 2）形成基板接合体（40），e）在形成在压电基板（2）的缺陷层（4）处分离基板接合体（40），使得在表面 压电基板（2）的缺陷层（2a）和缺陷层（4）与压电基板（2）分离 结合到支撑基板（10）上以形成复合压电基板（30），以及f）复合压电基板（30）的分离层（3）的表面（3a）被平滑化。

    ELASTIC WAVE DEVICE
    9.
    发明公开
    ELASTIC WAVE DEVICE 审中-公开
    ELASTISCHE WELLENVORRICHTUNG

    公开(公告)号：EP2763315A1

    公开(公告)日：2014-08-06

    申请号：EP12835346.3

    申请日：2012-09-24

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： KANDO, Hajime ,  IWAMOTO, Hideki

    IPC: H03H9/145

    CPC classification number: H03H9/17 ,  H03H9/0222 ,  H03H9/02559 ,  H03H9/02574

    Abstract: Provided is an elastic wave device in which variations in frequency characteristics are unlikely to occur and the electromechanical coupling coefficient k 2 can be enhanced regardless of variations in the thickness of a piezoelectric body. An elastic wave device (1) includes a medium layer (3), a piezoelectric body (4), and an IDT electrode (5) that are disposed on a supporting substrate (2). The medium layer (3) is made of a medium containing a low-velocity medium in which the propagation velocity of the same bulk wave as that which is a main vibration component of an elastic wave propagating in the piezoelectric body and being used is lower than the propagation velocity of the elastic wave, and a high-velocity medium in which the propagation velocity of the same bulk wave as that which is a main vibration component of the elastic wave is higher than the propagation velocity of the elastic wave.

    Abstract translation: 提供一种弹性波装置，其中不管压电体厚度的变化如何，不可能发生频率特性的变化并且可以增强机电耦合系数k 2。 弹性波装置（1）包括设置在支撑基板（2）上的介质层（3），压电体（4）和IDT电极（5）。 中间层（3）由包含低速介质的介质制成，其中与在压电体中传播并被使用的弹性波的主要振动分量相同的体波的传播速度低于 弹性波的传播速度和与弹性波的主振动分量相同的体波的传播速度高于弹性波的传播速度的高速介质。

    ELASTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME.
    10.
    发明公开
    ELASTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME. 审中-公开
    弹性波装置及其制造方法。

    公开(公告)号：EP2658123A1

    公开(公告)日：2013-10-30

    申请号：EP11850979.3

    申请日：2011-12-20

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： KIDO, Syunsuke ,  IWAMOTO, Hideki ,  KANDO, Hajime ,  WATANABE, Munehisa

    IPC: H03H9/145 ,  H03H3/08 ,  H03H9/25

    CPC classification number: H03H9/0222 ,  H01L41/04 ,  H01L41/047 ,  H01L41/0477 ,  H01L41/18 ,  H01L41/22 ,  H03H3/02 ,  H03H3/04 ,  H03H3/08 ,  H03H3/10 ,  H03H9/02574 ,  H03H9/02834 ,  H03H9/54 ,  H03H2003/023 ,  H03H2003/027 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

    Abstract: Provided is an elastic wave device which can be used at high frequencies and in which the Q factor can be enhanced. An elastic wave device (1) includes a supporting substrate (2); a high-acoustic-velocity film (3) stacked on the supporting substrate (2), in which the acoustic velocity of a bulk wave propagating therein is higher than the acoustic velocity of an elastic wave propagating in a piezoelectric film (5); a low-acoustic-velocity film (4) stacked on the high-acoustic-velocity film (3), in which the acoustic velocity of a bulk wave propagating therein is lower than the acoustic velocity of a bulk wave propagating in the piezoelectric film (5); the piezoelectric film (5) stacked on the low-acoustic-velocity film (4); and an IDT electrode (6) stacked on a surface of the piezoelectric film (5).

    Abstract translation: 本发明提供一种能够在高频下使用并且可以提高Q因子的弹性波装置。 一种弹性波装置（1），其具有支撑基板（2）， （2）上的高声速膜（3），其中在其中传播的体波的声速高于在压电膜（5）中传播的弹性波的声速; 在高声速膜（3）上层叠的低声速膜（4），其中传播的体波的声速低于在压电膜中传播的体波的声速（ 5）; 堆叠在低声速膜（4）上的压电膜（5）; 以及堆叠在压电膜（5）的表面上的IDT电极（6）。

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