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    CHIP PACKAGING METHOD AND CHIP PACKAGING STRUCTURE
    2.
    发明公开
    CHIP PACKAGING METHOD AND CHIP PACKAGING STRUCTURE 审中-公开

    公开(公告)号：EP3808698A1

    公开(公告)日：2021-04-21

    申请号：EP20199847.3

    申请日：2020-10-02

    Applicant: Hangzhou JWL Technology Inc.

    Inventor： LI, Linping ,  SHENG, Jinghao ,  JIANG, Zhou

    IPC: B81C1/00 ,  H03H3/007 ,  B81B7/00 ,  H03H9/00

    Abstract: Provided are a chip packaging method and a chip packaging structure. The passivation layer is arranged on the pads of the wafer, then the first bonding layer is formed on the passivation layer, and the second bonding layer is formed on the substrate. The substrate and the wafer are bonded and packaged together by bonding the first bonding layer and the second bonding layer. The pads are only used as a conductive structure, not as a bonding layer due to the passivation layer arranged between the pads and the bonding layer. The through silicon via is arranged at the position above the pad and avoiding the bonding layer, so as to connect the functional circuit region between the wafer and the substrate to the outside of the chip packaging structure.

    METHOD OF DEPOSITION AN ADDITIVE-CONTAINING ALUMINIUM NITRIDE FILM, AN ADDITIVE-CONTAINING ALUMINIUM NITRIDE FILM, A PIEZOELECTRIC DEVICE
    3.
    发明公开
    METHOD OF DEPOSITION AN ADDITIVE-CONTAINING ALUMINIUM NITRIDE FILM, AN ADDITIVE-CONTAINING ALUMINIUM NITRIDE FILM, A PIEZOELECTRIC DEVICE 审中-公开

    公开(公告)号：EP3739077A1

    公开(公告)日：2020-11-18

    申请号：EP20171145.4

    申请日：2020-04-23

    Applicant: SPTS Technologies Limited

    Inventor： HAYMORE, Scott ,  BURGESS, Stephen ,  THOMAS, Adrian ,  WILBY, Anthony ,  RASTOGI, Amit

    IPC: C23C14/00 ,  C23C14/02 ,  C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  H01L41/316 ,  H03H9/00

    Abstract: According to the present invention there is provided a method for sputter depositing an additive-containing aluminium nitride film containing an additive element selected from Sc or Y, the method comprising the steps of:
    depositing a first layer of the additive-containing aluminium nitride film onto a substrate disposed within a chamber by pulsed DC reactive sputtering; and
    depositing a second layer of the additive-containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering, the second layer having the same composition as the first layer;
    wherein:
    the step of depositing the first layer comprises introducing a gas or gaseous mixture into the chamber at a flow rate (in sccm), and 87-100 % of the flow rate (in sccm) is a flow of nitrogen gas;
    the step of depositing the second layer comprises introducing a gaseous mixture into the chamber at a flow rate (in sccm), the gaseous mixture comprising nitrogen gas and an inert gas; and
    the percentage of nitrogen gas in the flow rate (in sccm) used during the step of depositing the first layer is greater than the percentage of nitrogen gas in the flow rate (in sccm) used during the step of depositing the second layer.

    SURFACE ACOUSTIC WAVE DEVICE
    5.
    发明授权
    SURFACE ACOUSTIC WAVE DEVICE 有权

    公开(公告)号：EP2493073B1

    公开(公告)日：2018-11-28

    申请号：EP10824909.5

    申请日：2010-10-19

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： NAKAHASHI, Norihiko

    IPC: H03H9/145 ,  H03H9/00

    CPC classification number: H03H9/14541 ,  H03H9/0071 ,  H03H9/14544 ,  H03H9/14582

    Abstract: To provide a surface acoustic wave device capable of increasing the electromechanical coupling coefficient and reducing the maximum insertion loss in a passband when used as a band-pass filter. A surface acoustic wave device has an electrode (3) and a dielectric layer (10) laminated on a piezoelectric substrate (2), in which the electrode (3) has a first electrode film (3a) containing Pt, Au, Ag, or Cu and a second electrode film (3b) containing Al, the normalized film thickness h/» of the first electrode film (3a) is 0.005 or more and at most 0.015 in the case of Pt, the normalized film thickness h/» of the Al film is 0.06 or more and at most 0.185, and the normalized film thickness h/» of the dielectric layer 10 is 0.2 or less.

    Surface acoustic wave filter
    6.
    发明授权
    Surface acoustic wave filter 有权

    公开(公告)号：EP1341304B1

    公开(公告)日：2018-04-11

    申请号：EP03290480.7

    申请日：2003-02-28

    Applicant: MURATA MANUFACTURING CO., LTD.

    Inventor： Takamine, Yuichi, Murata Manufacturing Co., Ltd.

    IPC: H03H9/64 ,  H03H9/00 ,  H03H9/145

    CPC classification number: H03H9/008 ,  H03H9/0038 ,  H03H9/0042 ,  H03H9/0071 ,  H03H9/0085 ,  H03H9/14582 ,  H03H9/14588 ,  H03H9/14591 ,  H03H9/14597 ,  H03H9/6436

    Abstract: A surface acoustic wave filter (1000) includes, on a piezoelectric substrate (X), longitudinally coupled resonator type surface acoustic wave filter sections (1001,1002), including interdigital transducers, each having a narrow-pitched electrode finger portion in an area where interdigital transducers are adjacent to each other, first surface acoustic wave resonators (1023,1024), between the surface acoustic wave filter sections (1001,1002) and an input terminal (213), and second surface acoustic wave resonators (1021,1022) between the surface acoustic wave filter sections (1001,1002) and output terminals (214,215). The resonance point of the surface acoustic wave resonators (1021-1025) falls within the passband of the surface acoustic wave filter sections (1001,1002), and the antiresonance point of the surface acoustic wave resonators is positioned in the vicinity of the high frequency side of the passband.

    VERTICALLY COUPLED RESONATOR-TYPE ELASTIC SURFACE WAVE FILTER
    7.
    发明授权
    VERTICALLY COUPLED RESONATOR-TYPE ELASTIC SURFACE WAVE FILTER 有权
    垂直耦合谐振器型弹性表面波滤波器

    公开(公告)号：EP2830217B1

    公开(公告)日：2018-02-21

    申请号：EP13764500.8

    申请日：2013-03-15

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： NORICHI, Takahiro

    IPC: H03H9/64 ,  H03H9/00 ,  H03H9/145

    CPC classification number: H03H9/0047 ,  H03H9/0057 ,  H03H9/14588 ,  H03H9/6469

    Abstract: A longitudinally-coupled-resonator-type surface acoustic wave filter includes an unbalanced terminal (10), balanced terminals (20), a piezoelectric substrate, a first surface acoustic wave filter unit (11), a second surface acoustic wave filter unit (12), an unbalanced signal wiring line, balanced signal wiring lines, a pair of interstage wiring lines that connect the first surface acoustic wave filter unit (11) and the second surface acoustic wave filter unit (12) to each other, and ground wiring lines. The first surface acoustic wave filter unit (11) includes a first IDT (111) and a pair of a second IDT and a third IDT (112). The first IDT (111) includes a pair of first divided comb tooth shaped electrodes (111a) obtained by dividing a comb tooth shaped electrode on the side far from the unbalanced terminal (10) along a central axis x. The pair of first divided comb tooth shaped electrodes (111a) are connected by the interstage wiring lines to the second surface acoustic wave filter unit (12). A comb tooth shaped electrode of the second IDT and a comb tooth shaped electrode of the third IDT (112) on the side far from the unbalanced terminal (10) are respectively connected to ground wiring lines that are routed outside of the interstage wiring lines.

    ELASTIC WAVE DEVICE
    10.
    发明公开
    ELASTIC WAVE DEVICE 审中-公开
    ELASTIKWELLENANORDNUNG

    公开(公告)号：EP2128982A4

    公开(公告)日：2013-07-24

    申请号：EP08721995

    申请日：2008-03-13

    Applicant: MURATA MANUFACTURING CO

    Inventor： KANDO HAJIME ,  KIDO SHUNSUKE ,  NAKAO TAKESHI ,  YAMAMOTO DAISUKE

    IPC: H03H9/145 ,  H03H9/00 ,  H03H9/02

    CPC classification number: H03H9/02921 ,  H03H9/0071 ,  H03H9/02858 ,  H03H9/02881 ,  H03H9/14538 ,  H03H9/14594

    Abstract: There is provided an acoustic wave element that enables an improvement of resonance characteristics at the vicinity of a resonance frequency and that prevents short-circuit failure between electrode fingers and degradation in insulation properties. In an acoustic wave element (1), an IDT electrode (3) is in contact with a piezoelectric material. The IDT electrode (3) includes a plurality of electrode fingers. The plurality of electrode fingers include first and second electrode fingers (31 and 32) that adjoin each other in an acoustic wave propagation direction and that connect to different potentials and a first dummy electrode finger (34) facing the first electrode finger (31) via a gap (33) placed on an outer side in an electrode finger length direction of the first electrode finger (31). At the vicinity of the gap, first protrusions (11 to 14) are provided in at least one of the first electrode finger (31) and the first dummy electrode finger (34), the first protrusion protruding in the acoustic wave propagation direction from at least one of side edges of the electrode finger.

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