公开(公告)号：EP2493073A1

公开(公告)日：2012-08-29

申请号：EP10824909.5

申请日：2010-10-19

Applicant: Murata Manufacturing Co., Ltd.

Inventor： NAKAHASHI, Norihiko

IPC: H03H9/145 ,  H03H9/25

CPC classification number: H03H9/14541 ,  H03H9/0071 ,  H03H9/14544 ,  H03H9/14582

Abstract: To provide a surface acoustic wave device capable of increasing the electromechanical coupling coefficient and reducing the maximum insertion loss in a passband when used as a band-pass filter. A surface acoustic wave device has an electrode (3) and a dielectric layer (10) laminated on a piezoelectric substrate (2), in which the electrode (3) has a first electrode film (3a) containing Pt, Au, Ag, or Cu and a second electrode film (3b) containing Al, the normalized film thickness h/λ of the first electrode film (3a) is 0.005 or more and at most 0.015 in the case of Pt, the normalized film thickness h/λ of the Al film is 0.06 or more and at most 0.185, and the normalized film thickness h/λ of the dielectric layer 10 is 0.2 or less.

Abstract translation: 提供一种当用作带通滤波器时能够增加机电耦合系数并减小通带中的最大插入损耗的表面声波器件。 本发明的弹性表面波装置具有在压电基板（2）上层叠电极（3）和电介质层（10），电极（3）具有包含Pt，Au，Ag或 Cu和包含Al的第二电极膜（3b），在Pt的情况下，第一电极膜（3a）的标准化膜厚度h /λ为0.005以上且至多0.015， Al膜为0.06以上且0.185以下，电介质层10的标准化膜厚h /λ为0.2以下。

公开(公告)号：EP2493073B1

公开(公告)日：2018-11-28

申请号：EP10824909.5

申请日：2010-10-19

Applicant: Murata Manufacturing Co., Ltd.

Inventor： NAKAHASHI, Norihiko

IPC: H03H9/145 ,  H03H9/00

CPC classification number: H03H9/14541 ,  H03H9/0071 ,  H03H9/14544 ,  H03H9/14582

Abstract: To provide a surface acoustic wave device capable of increasing the electromechanical coupling coefficient and reducing the maximum insertion loss in a passband when used as a band-pass filter. A surface acoustic wave device has an electrode (3) and a dielectric layer (10) laminated on a piezoelectric substrate (2), in which the electrode (3) has a first electrode film (3a) containing Pt, Au, Ag, or Cu and a second electrode film (3b) containing Al, the normalized film thickness h/» of the first electrode film (3a) is 0.005 or more and at most 0.015 in the case of Pt, the normalized film thickness h/» of the Al film is 0.06 or more and at most 0.185, and the normalized film thickness h/» of the dielectric layer 10 is 0.2 or less.

公开(公告)号：EP2299595A1

公开(公告)日：2011-03-23

申请号：EP09773100.4

申请日：2009-05-21

Applicant: Murata Manufacturing Co. Ltd.

Inventor： NAKAHASHI, Norihiko ,  TANIGUCHI, Yasumasa

IPC: H03H9/64 ,  H01L41/09 ,  H01L41/18 ,  H03H9/25

CPC classification number: H03H9/14594 ,  H03H9/6409 ,  H03H9/6483 ,  H03H9/6486 ,  H03H2007/013

Abstract: An inexpensive compact band rejection filter which realizes a high sharpness of a filter characteristic at ends of passbands and which has a large attenuation is provided. In the band rejection filter (1), at least one of elastic wave resonators which contributes to formation of a transition band has a propagation angle larger than those of the other elastic wave resonators. Accordingly, the at least one of the elastic wave resonators which contributes to the formation of the transition band has an electromechanical coupling coefficient smaller than electromechanical coupling coefficients of the other elastic wave resonator.

Abstract translation: 提供了一种廉价的紧凑带阻滤波器，其实现了通带端部的滤波器特性的高锐度，并且具有大的衰减。 在带阻滤波器（1）中，有助于形成过渡频带的弹性波谐振器中的至少一个具有比其它弹性波谐振器大的传播角度。 因此，有助于形成过渡带的弹性波谐振器中的至少一个具有小于另一个弹性波谐振器的机电耦合系数的机电耦合系数。

公开(公告)号：EP2068442B1

公开(公告)日：2016-09-28

申请号：EP07806505.9

申请日：2007-08-31

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： MIMURA, Masakazu ,  FUJII, Yasuhisa ,  YATA, Masaru ,  NAKAHASHI, Norihiko

IPC: H03H9/145 ,  H03H9/25 ,  H03H9/02

CPC classification number: H03H9/0222 ,  H03H9/02559 ,  H03H9/14541

公开(公告)号：EP2068442A1

公开(公告)日：2009-06-10

申请号：EP07806505.9

申请日：2007-08-31

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： MIMURA, Masakazu ,  FUJII, Yasuhisa ,  YATA, Masaru ,  NAKAHASHI, Norihiko

IPC: H03H9/145 ,  H03H9/25

CPC classification number: H03H9/0222 ,  H03H9/02559 ,  H03H9/14541

Abstract: A boundary acoustic wave device is provided which can decrease insertion loss regardless of whether the duty ratio is high or low. In a boundary acoustic wave device (1) including: a piezoelectric substance (2) composed of LiNbO 3 having a surface obtained by rotating a Y axis by 15°±10° as a primary surface; a dielectric substance (3) which is composed of a silicon oxide and which is laminated to the piezoelectric substance (2); and an electrode structure (4) which is disposed at a boundary between the piezoelectric substance (2) and the dielectric substance (3) and which includes an IDT to utilize a boundary acoustic wave propagating along the boundary, when the density of the IDT, the thickness thereof, the wavelength determined by the period of electrode fingers of the IDT, and the duty ratio thereof are represented by ρ (kg/m 3 ), H (µm), λ (µm), and x, respectively, x and the product of H/λ and ρ are set in the range that satisfies the following formula (1). Mathematical Expression 1 H / λ × ρ > 70.7924 ⁢ x + 0.055 - 2.0884 + 797.09

Abstract translation: 提供了一种能够降低插入损耗的边界弹性波装置，而不管占空比是高还是低。 在一种声界面波装置（1）中，包括：由具有通过使Y轴旋转15°±10°获得的表面作为主表面的LiNbO 3构成的压电体（2） 由氧化硅构成并层压在压电体（2）上的电介质（3）; 以及电极结构（4），其设置在所述压电体（2）与所述电介质（3）之间的边界处，并且当所述IDT的密度为1时，所述电极结构（4）包括沿着所述边界传播的边界声波的IDT， 其厚度，由IDT的电极指的周期确定的波长及其占空比分别由Á（kg / m 3），H（μm），»（μm）和x表示，x和 H /»和Á的乘积设定在满足下列公式（1）的范围内。 数学表达式1 H /»×Á> 70.7924 ¢x + 0.055 - 2.0884 + 797.09