公开(公告)号：EP2388802B1

公开(公告)日：2015-05-06

申请号：EP09838237.7

申请日：2009-12-04

申请人： NAMIKI SEIMITSU HOUSEKI KABUSHIKI KAISHA ,  Disco Corporation

发明人： AIDA, Hideo ,  AOTA, Natsuko ,  HOSHINO, Hitoshi

IPC分类号： H01L21/20 ,  C23C16/02 ,  C30B33/00 ,  H01L21/205 ,  C30B29/20 ,  C30B29/40 ,  C30B33/04 ,  C30B25/18 ,  C30B29/38 ,  B23K26/00 ,  H01L21/02

CPC分类号： C30B29/20 ,  C30B25/186 ,  C30B29/403 ,  C30B33/04 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02686

公开(公告)号：EP2388802A1

公开(公告)日：2011-11-23

申请号：EP09838237.7

申请日：2009-12-04

申请人： NAMIKI SEIMITSU HOUSEKI KABUSHIKI KAISHA ,  Disco Corporation

发明人： AIDA, Hideo ,  AOTA, Natsuko ,  HOSHINO, Hitoshi

IPC分类号： H01L21/20 ,  B23K26/00 ,  C23C16/02 ,  C30B29/38 ,  C30B33/00 ,  H01L21/205

CPC分类号： C30B29/20 ,  C30B25/186 ,  C30B29/403 ,  C30B33/04 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02686

摘要： [Purpose] In the field of sapphire substrates used chiefly for epitaxial growth of nitride semiconductor layers, to provide a sapphire substrate of which the shape and/or amount of warping can be controlled efficiently and precisely and of which substrate warping that occurs during layer formation can be suppressed and substrate warping behavior can be minimized, to provide nitride semiconductor layer growth bodies, nitride semiconductor devices, and nitride semiconductor bulk substrates using such substrates, and to provide a method of manufacturing these products.
[Means of Resolution] Reformed domain patterns are formed within a sapphire substrate and the warp shape and/or amount of warping of the sapphire substrate are controlled by means of multiphoton absorption by condensing and scanning a pulsed laser through a polished surface of the sapphire substrate. When nitride semiconductor layers are formed using sapphire substrates obtained by means of this invention, substrate warping during layer formation is suppressed and substrate warping behavior is minimized so that layer quality and uniformity are improved and the quality and yield of nitride semiconductor devices is increased.

摘要翻译： [目的]在主要用于氮化物半导体层的外延生长的蓝宝石衬底领域中，提供蓝宝石衬底，其中可以有效和精确地控制翘曲的形状和/或量，以及在层形成期间发生的衬底翘曲 可以抑制基板翘曲行为，提供使用这种基板的氮化物半导体层生长体，氮化物半导体器件和氮化物半导体体基板，并提供制造这些产品的方法。 [解决方法]在蓝宝石衬底内形成重新形成的畴图案，并且蓝宝石衬底的翘曲形状和/或翘曲量通过多个光子吸收来控制，通过将脉冲激光通过蓝宝石衬底的抛光表面进行冷凝和扫描 。 当使用通过本发明获得的蓝宝石衬底形成氮化物半导体层时，抑制了层形成期间的衬底翘曲，并且使衬底翘曲行为最小化，从而提高了层的质量和均匀性，并且提高了氮化物半导体器件的质量和产量。

公开(公告)号：EP2544219A1

公开(公告)日：2013-01-09

申请号：EP11750812.7

申请日：2011-03-04

申请人： Namiki Seimitsu Houseki kabushikikaisha ,  Disco Corporation

发明人： AIDA, Hideo ,  AOTA, Natsuko ,  HOSHINO, Hitoshi ,  FURUTA, Kenji ,  HAMAMOTO, Tomosaburo ,  HONJO, Keiji

IPC分类号： H01L21/20 ,  C30B29/20 ,  C30B33/02 ,  H01L21/268

CPC分类号： H01L23/564 ,  C30B29/20 ,  C30B33/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02428 ,  H01L21/0254 ,  H01L21/02686 ,  H01L21/268 ,  H01L29/045 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to correct warpage that occurs in formation of a multilayer film, provided are a single crystal substrate with a multilayer film, a manufacturing method therefor, and an element manufacturing method using the manufacturing method. The single crystal substrate with a multilayer film includes: a single crystal substrate (20); a multilayer film (30) including two or more layers that is formed on one surface of the single crystal substrate (20) and having a compressive stress; and a heat-denatured layer (22) provided, of two regions (20U, 20D) obtained by bisecting the single crystal substrate (20) in the thickness direction thereof, at least in the region (20D) on the side of the surface opposite to the one surface of the single crystal substrate (20) having the multilayer film (30) formed thereon.

摘要翻译： 为了校正翘曲所做的发生在形成多层膜，电影的，提供了具有多层的电影，其制造方法的单晶衬底，以及使用该制造方法元件制造方法。 具有多层膜包括单晶衬底：一单晶衬底（20）; 多层膜 - （30）包括两个或更多个层没有形成在（20）的单晶衬底的一个表面上，并具有压缩应力; 和热变性的层（22）提供了一种通过在厚度方向上二等分的单晶衬底（20）上，在相反的面上的一侧的区域（20D）至少获得的两个区域（20U，20D）的， 到其上形成有多层影片（30）的单晶衬底（20）的一个表面上。

公开(公告)号：EP2717335A1

公开(公告)日：2014-04-09

申请号：EP12789367.5

申请日：2012-04-03

申请人： Namiki Seimitu Houseki Kabushiki Kaisha ,  Disco Corporation

发明人： AIDA, Hideo ,  AOTA, Natsuko ,  TAKEDA, Hidetoshi ,  HONJO, Keiji ,  HOSHINO, Hitoshi

IPC分类号： H01L33/38 ,  H01L21/205 ,  H01L21/306

CPC分类号： H01L33/62 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/382 ,  H01L33/387 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： To eliminate damage to a light-emitting element layer caused by the formation of a vertical hole to be formed in a monocrystalline substrate when manufacturing a light-emitting element. Provided are a method of manufacturing a light-emitting element by which a light-emitting element (80) is manufactured through the following steps and a light-emitting element manufactured by employing the method. A light-emitting element layer (40) is formed on one face (32T) of a monocrystalline substrate (30A) for a light-emitting element. Next, the other face (32B) of the monocrystalline substrate (30A) for a light-emitting element is polished until a state where a vertical hole (34A) penetrates the monocrystalline substrate (30A) for a light-emitting element in its thickness direction is established. Next, a conductive material is filled into the vertical hole (34B) from the side of the vertical hole (34B) closer to an opening (36B) in the other face (32B) to form a conductive portion (50) that is continuous from a side closer to the light-emitting element layer (40) to the opening (36B) in the other face (32B).

摘要翻译： 为了消除由于在制造发光元件时在单晶衬底中形成垂直孔而导致对发光元件层的损坏。 本发明提供制造发光元件（80）的发光元件的制造方法以及使用该方法制造的发光元件。 发光元件层（40）形成在发光元件用单晶衬底（30A）的一个面（32T）上。 接着，对发光元件用单晶衬底（30A）的另一个面（32B）进行研磨，直到垂直孔（34A）沿厚度方向贯通发光元件用单晶衬底（30A）的状态 成立。 接下来，从垂直孔（34B）的更靠近另一面（32B）中的开口（36B）的一侧将导电材料填充到垂直孔（34B）中，以形成与从垂直孔（34B）连续的导电部分 在另一个面（32B）中靠近发光元件层（40）到开口（36B）的一侧。

公开(公告)号：EP2544220A1

公开(公告)日：2013-01-09

申请号：EP11750815.0

申请日：2011-03-04

申请人： Namiki Seimitsu Houseki kabushikikaisha ,  Disco Corporation

发明人： AIDA, Hideo ,  AOTA, Natsuko ,  HOSHINO, Hitoshi ,  FURUTA, Kenji ,  HAMAMOTO, Tomosaburo ,  HONJO, Keiji

IPC分类号： H01L21/20 ,  C30B29/20 ,  C30B33/02 ,  H01L21/268

CPC分类号： C30B33/04 ,  H01L21/268 ,  H01L29/205

摘要： In order to correct warpage resulting from the formation of a multilayer film, provided are a single crystal substrate which includes a heat-denatured layer provided in one of two regions including a first region (10D) and a second region (10U) obtained by bisecting the single crystal substrate in a thickness direction thereof, and which is warped convexly toward a side of a surface of the region provided with the heat-denatured layer, a manufacturing method for the single crystal substrate, a manufacturing method for a single crystal substrate with a multilayer film using the single crystal substrate, and an element manufacturing method using the manufacturing method for a single crystal substrate with a multilayer film.

摘要翻译： 为了校正翘曲从多层薄膜，电影的形成而产生，提供了其包括在两个区域包括第一区域（10D），并通过二等分而得到的第二区域（10U）中的一个提供的热改性层的单晶衬底 该凸状翘曲朝向设置有热变性层，对于单晶衬底的制造方法，对于具有单晶衬底的制造方法的区域的表面侧在厚度方向上的单晶衬底，并且所有 使用的制造方法例如具有多层成膜的单晶衬底的多层膜，使用单晶衬底，以及元件制造方法。

公开(公告)号：EP2843687A1

公开(公告)日：2015-03-04

申请号：EP13782105.4

申请日：2013-04-24

申请人： Namiki Seimitsu Houseki kabushikikaisha ,  Disco Corporation

发明人： AIDA, Hideo ,  AOTA, Natsuko ,  TAKEDA, Hidetoshi ,  HONJO, Keiji ,  HOSHINO, Hitoshi ,  OGASAWARA, Mai

IPC分类号： H01L21/02

CPC分类号： H01L21/707 ,  B23K26/0057 ,  B23K26/0093 ,  B23K26/0624 ,  B23K26/40 ,  B23K2203/50 ,  B23K2203/52 ,  H01L21/02005 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/302 ,  H01L21/7806 ,  H01L33/0079 ,  H01L2924/12042 ,  Y10T428/24628 ,  H01L2924/00

摘要： To inhibit appearance of a void (void due to a surface shape of a substrate) on a joined interface of a composite substrate, provided is a composite substrate manufacturing method, including at least: a first raw board deforming step of preparing a first substrate (12) by deforming a first raw board (10) having at least one surface as a mirror surface (10M) into a state in which the mirror surface (10M) warps outward; and a joining step of joining, after the first raw board deforming step, a protruding surface of the first substrate (12) and one surface (20TP) of a second substrate (22) to each other, thereby manufacturing a composite substrate (30) including the first substrate (12) and the second substrate (22) joined to the first substrate (12), in which the second substrate (22) is any one substrate selected from a substrate having both surfaces as substantially flat surfaces and a substrate that warps so that a surface (20TP) thereof to be joined to the first substrate (12) warps outward. Also provided are a semiconductor element manufacturing method using the composite substrate manufacturing method, and a composite substrate and a semiconductor element manufactured using the composite substrate manufacturing method.

摘要翻译： 为了抑制在复合基板的接合界面上产生空隙（基板的表面形状所导致的空洞），提供一种复合基板的制造方法，其至少包括：第一原料板变形工序，准备第一基板（ 通过将具有至少一个表面作为镜面（10M）的第一原料板（10）变形成镜面（10M）向外翘曲的状态; 以及接合步骤，在第一原料板变形步骤之后，将第一基板（12）的突出表面和第二基板（22）的一个表面（20TP）彼此接合，由此制造复合基板（30） 包括与第一基板（12）接合的第一基板（12）和第二基板（22），其中第二基板（22）是从两面均为基本平坦表面的基板和基板中选择的任一基板， 弯曲以使其待连接到第一基板（12）的表面（20TP）向外翘曲。 还提供了使用该复合基板制造方法的半导体元件制造方法，以及使用该复合基板制造方法制造的复合基板和半导体元件。

公开(公告)号：EP2543752A1

公开(公告)日：2013-01-09

申请号：EP11750807.7

申请日：2011-03-04

申请人： Namiki Seimitsu Houseki kabushikikaisha ,  Disco Corporation

发明人： AIDA, Hideo ,  AOTA, Natsuko ,  HOSHINO, Hitoshi ,  FURUTA, Kenji ,  HAMAMOTO, Tomosaburo ,  HONJO, Keiji

IPC分类号： C30B29/20 ,  B23K26/40 ,  C30B33/02 ,  H01L21/02 ,  H01L21/20 ,  H01L21/268 ,  H01L21/324 ,  H01L33/00

CPC分类号： C30B33/04 ,  B23K26/0006 ,  B23K26/0057 ,  B23K2203/56 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02428 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02686 ,  H01L21/268 ,  H01L31/184 ,  H01L33/007

摘要： Provided are an internally reformed substrate for epitaxial growth having an arbitrary warpage shape and/or an arbitrary warpage amount, an internally reformed substrate with a multilayer film using the internally reformed substrate for epitaxial growth, a semiconductor device, a bulk semiconductor substrate, and manufacturing methods therefor. The internally reformed substrate for epitaxial growth includes: a single crystal substrate; and a heat-denatured layer formed in an internal portion of the single crystal substrate by laser irradiation to the single crystal substrate.

摘要翻译： 本发明提供了在用于在任意的翘曲形状和/或以任意的翘曲量的具有外延生长于内部改性基材与内部改性衬底的多层膜，使用外延生长，半导体装置，体半导体基板，制造内部改性基材 为此方法。 外延生长用内部改性衬底包括：单晶衬底; 和热改性层通过激光照射形成在所述单晶衬底的内部部分到单晶衬底。

公开(公告)号：EP2544221A1

公开(公告)日：2013-01-09

申请号：EP11750819.2

申请日：2011-03-04

申请人： Namiki Seimitsu Houseki kabushikikaisha ,  Disco Corporation

发明人： AIDA, Hideo ,  AOTA, Natsuko ,  HOSHINO, Hitoshi ,  FURUTA, Kenji ,  HAMAMOTO, Tomosaburo ,  HONJO, Keiji

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/268

CPC分类号： H01L21/268 ,  C30B33/04 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02428 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02686 ,  H01L21/02691

摘要： Provided are a crystalline film in which variations in the crystal axis angle after separation from a substrate for epitaxial growth have been eliminated, and various devices in which the properties thereof have been improved by including the crystalline film. Also provided are manufacturing methods for the crystalline film and the devices. A crystalline film having a thickness in the range of 300 µm or more and 10 mm or less is formed by epitaxial growth on a surface of a single crystal substrate, which is the substrate for epitaxial growth. The crystalline film is subsequently separated from the single crystal substrate. A reformed region pattern is formed by, when a relative position of the reformed region pattern in a thickness direction of the crystalline film in which warpage has occurred after separation is assumed to be 0% at a surface thereof on a concavely warped side and 100% at a surface thereof on a convexly warped side, concentrating a pulsed laser onto an internal portion of the crystalline film in a range of 3% or more and less than 50% in the thickness direction to scan the internal portion, and using multiphoton absorption by the pulsed laser, thereby reducing or eliminating the amount of warpage of the crystalline film and reducing or eliminating variations in the crystal axis angle.

摘要翻译： 本发明提供在从外延生长用基板分离后的晶轴角度的变化哪一个结晶电影已被消除，以及各种装置，其中其性能已经通过包括结晶电影改善。 这样提供了用于结晶膜和器件制造方法。 具有的厚度在300微米以上且10毫米以下的范围的结晶电影通过外延生长的单晶基片的表面，在所有这对于外延生长在基板上形成的。 结晶电影随后从单晶衬底分离。 改性区域图案通过，当假定分离后为0％，在一个表面上的凹形变形的侧和其的100％发生在结晶电影在哪翘曲的厚度方向上的改性区域图案的相对位置处形成 在上凸翘曲侧的面，在一个范围内的3％以上且在厚度方向上小于50％浓缩的脉冲激光走上至结晶电影的内部部分，以扫描所述内部部分，以及使用多光子吸收由 脉冲激光，从而减少或消除晶体膜的翘曲量和减少或消除在晶轴角度的变化。