公开(公告)号：EP4398288A1

公开(公告)日：2024-07-10

申请号：EP23216159.6

申请日：2023-12-13

申请人： Commissariat à l'énergie atomique et aux énergies alternatives

发明人： LAURENT, Romain ,  MEHREZ, Zouhir

IPC分类号： H01L21/308 ,  H01L21/02 ,  H01L21/266 ,  H01L23/31

CPC分类号： H01L21/0274 ,  H01L21/3083 ,  H01L21/6835 ,  H01L21/266 ,  H01L23/562 ,  H01L23/564 ,  H01L23/3171

摘要： L'invention concerne un procédé de transformation d'un support comprenant les étapes suivantes :
- fournir un support (10) présentant une face supérieure (11),
- réaliser un revêtement de protection (100) surmontant au moins partiellement une zone périphérique (14) de la face supérieure formant un contour fermé autour d'une zone centrale (15) de la face supérieure.
Le procédé se caractérise en ce que la réalisation du revêtement de protection comprend les étapes suivantes :
- former une première couche (20) d'une résine photosensible inversible surmontant la face supérieure du support,
- exposer une première portion (24) de la première couche de résine photosensible avec une première dose d'insolation supérieure à la dose d'inversion de la résine, la première portion couvrant strictement la même surface de la face supérieure que le revêtement de protection, de sorte à former le revêtement de protection.

公开(公告)号：EP4374424A1

公开(公告)日：2024-05-29

申请号：EP21955230.4

申请日：2021-08-26

申请人： VISHAY GENERAL SEMICONDUCTOR, LLC

发明人： DING, Huiying ,  JIN, Longnan ,  BAI, Junkai ,  CHIN, Jui Sen

IPC分类号： H01L23/367 ,  H01L21/60 ,  H01L21/52 ,  H01L23/34 ,  H01L23/48 ,  H05K1/02

CPC分类号： H01L23/49562 ,  H01L23/49568 ,  H01L23/49524 ,  H01L21/4842 ,  H01L2224/3224520130101 ,  H01L2224/4024520130101 ,  H01L2924/18120130101 ,  H01L24/32 ,  H01L24/40 ,  H01L24/37 ,  H01L2224/3712420130101 ,  H01L2224/3714720130101 ,  H01L2224/3713920130101 ,  H01L2224/3714420130101 ,  H01L2224/4514420130101 ,  H01L2224/4514720130101 ,  H01L2224/4513920130101 ,  H01L24/45 ,  H01L2224/8580120130101 ,  H01L2224/858420130101 ,  H01L2224/858520130101 ,  H01L2224/4009520130101 ,  H01L2224/7326320130101 ,  H01L2924/181520130101 ,  H01L24/73 ,  H01L2224/838420130101 ,  H01L2224/8380120130101 ,  H01L2224/2910120130101 ,  H01L2224/848420130101 ,  H01L2224/8480120130101 ,  H01L24/29 ,  H01L24/83 ,  H01L24/84 ,  H01L23/3107 ,  H01L23/562 ,  H01L23/564 ,  H05K1/0203

公开(公告)号：EP3216046A1

公开(公告)日：2017-09-13

申请号：EP15856201.7

申请日：2015-11-06

申请人： Texas Instruments Incorporated

发明人： GUO, Honglin ,  TAYLOR, Tim, A. ,  WEST, Jeff, A. ,  JACKSON, Ricky, A. ,  WILLIAMS, Byron

IPC分类号： H01L21/02 ,  H01L21/033 ,  H01L51/05 ,  H01L51/56

CPC分类号： H01L21/02118 ,  H01G4/14 ,  H01G4/18 ,  H01G4/224 ,  H01G4/236 ,  H01G4/33 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0228 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3192 ,  H01L23/564 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L28/40 ,  H01L51/00 ,  H01L2224/02166 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2224/45099

摘要： It has been discovered that poor TDDB reliability of microelectronic device capacitors with organic polymer material in the capacitor dielectric is due to water molecules infiltrating the organic polymer material when the microelectronic device is exposed to water vapor in the operating ambient. Water molecule infiltration from water vapor in the ambient is effectively reduced by a moisture barrier comprising a layer of aluminum oxide formed by an atomic layer deposition (ALD) process. A microelectronic device includes a capacitor with organic polymer material in the capacitor dielectric and a moisture barrier with a layer of aluminum oxide formed by an ALD process.

摘要翻译： 已经发现，当微电子器件暴露于工作环境中的水蒸汽时，电容器电介质中具有有机聚合物材料的微电子器件电容器的差的TDDB可靠性是由于水分子渗入有机聚合物材料。 通过包括通过原子层沉积（ALD）工艺形成的氧化铝层的防潮层有效地降低环境中水蒸气的水分子渗透。 微电子器件包括在电容器电介质中具有有机聚合物材料的电容器以及具有通过ALD工艺形成的氧化铝层的防潮层。

公开(公告)号：EP3046869A4

公开(公告)日：2017-04-26

申请号：EP14846305

申请日：2014-09-12

申请人： CALIFORNIA INST OF TECHN

发明人： TAI YU-CHONG ,  CHANG HAN-CHIEH

IPC分类号： B81C1/00 ,  A61B50/30 ,  A61F2/14 ,  A61N1/36 ,  A61N1/372 ,  A61N1/375 ,  H01L21/56 ,  H01L23/00 ,  H01L23/02 ,  H01L23/31 ,  H05K5/06

CPC分类号： H01L23/3135 ,  A61B50/30 ,  A61F2/14 ,  A61N1/36046 ,  A61N1/37211 ,  A61N1/3758 ,  B81C1/00 ,  H01L21/56 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a micropackaged device comprising: a substrate for securing a device with a corrosion barrier affixed to the substrate, wherein the corrosion barrier comprises a first thin-film layer, a metal film coating the thin-film layer and a second thin-film layer to provide a sandwich layer; and optionally at least one feedthrough disposed in the substrate to permit at least one input and or at least one output line into the micropackaged device, wherein the micropackaged device is encapsulated by the corrosion barrier. Methods of producing the micropackaged device are also disclosed.

摘要翻译： 本发明提供了一种微包装装置，包括：基底，用于固定具有附着于基底的腐蚀屏障的装置，其中腐蚀屏障包括第一薄膜层，覆盖薄膜层的金属膜和第二薄膜层， 薄膜层以提供夹心层; 以及可选地设置在所述基底中的至少一个馈通，以允许至少一个输入和/或至少一个输出线进入所述微包装装置，其中所述微包装装置由所述腐蚀屏障封装。 还公开了制造微封装器件的方法。

公开(公告)号：EP3089211A1

公开(公告)日：2016-11-02

申请号：EP16166445.3

申请日：2016-04-21

申请人： THALES

发明人： KERTESZ, Philippe

IPC分类号： H01L23/552 ,  H01L23/538 ,  H01L23/66 ,  H05K1/18 ,  H05K3/46

CPC分类号： H01L23/66 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/54 ,  H01L21/56 ,  H01L21/565 ,  H01L23/24 ,  H01L23/293 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/3675 ,  H01L23/49816 ,  H01L23/4985 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L23/552 ,  H01L23/564 ,  H01L23/60 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/32 ,  H01L24/50 ,  H01L24/73 ,  H01L24/83 ,  H01L2223/6683 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/73267 ,  H01L2224/83801 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/1423 ,  H01L2924/15311 ,  H01L2924/302 ,  H01L2924/3025 ,  H05K1/186 ,  H01L2924/0105

摘要： Le composant comporte au moins un support (11) sur lequel est fixé au moins un circuit électronique (2), par exemple un circuit de type MMIC, une ou plusieurs couches en matériaux organiques (13, 14, 15, 16, 17) empilées sur ledit support (11) selon une technique de type circuit imprimé et formant une cavité préexistante contenant ledit circuit électronique (2), ladite cavité étant rempli par un matériau de faible perméabilité à la vapeur d'eau tel que le LCP (1).

摘要翻译： A组分包括在所有被固定至少一个支撑至少一个电子电路中，例如MMIC型，堆叠在支撑雅丁到印刷电路类型的技术有机材料的一个或多个层的一个电路，并形成一个预先存在的 腔包含电子电路，所述空腔填充有低渗透性的水蒸汽的物质：诸如LCP。

公开(公告)号：EP2717299B1

公开(公告)日：2016-07-27

申请号：EP11857966.3

申请日：2011-05-26

申请人： Shindengen Electric Manufacturing Co., Ltd.

发明人： OGASAWARA, Atsushi ,  ITO, Kazuhiko ,  ITO, Koji

IPC分类号： H01L23/29 ,  H01L23/31 ,  C03C3/093 ,  C03C8/04 ,  C03C8/24 ,  C03C3/066 ,  H01L21/02 ,  H01L23/00 ,  H01L21/762 ,  H01L29/861 ,  H01L29/06

CPC分类号： H01L21/022 ,  C03C3/066 ,  C03C3/093 ,  C03C8/04 ,  C03C8/24 ,  H01L21/02123 ,  H01L21/02172 ,  H01L21/02318 ,  H01L21/76232 ,  H01L23/291 ,  H01L23/3178 ,  H01L23/564 ,  H01L29/0661 ,  H01L29/8611 ,  H01L29/8613 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a glass composition for protecting a semiconductor junction which contains at least SiO 2 , Al 2 O 3 , ZnO, CaO and 3 mol% to 10 mol% of B 2 O 3 , and substantially contains none of Pb, P, As, Sb, Li, Na and K. It is preferable that a content of SiO 2 falls within a range of 32 mol% to 48 mol%, a content of Al 2 O 3 falls within a range of 9 mol% to 13 mol%, a content of ZnO falls within a range of 18 mol% to 28 mol%, a content of CaO falls within a range of 15 mol% to 23 mol%, and a content of B 2 O 3 falls within a range of 3 mol% to 10 mol%. According to the glass composition for protecting a semiconductor junction of the present invention, a semiconductor device having a high withstand voltage can be manufactured by using a glass material which contains no lead in the same manner as a conventional case where "a glass material containing lead silicate as a main component" is used.

公开(公告)号：EP2668034A4

公开(公告)日：2016-07-06

申请号：EP12739625

申请日：2012-01-27

申请人： VITRIFLEX INC

发明人： PRASAD RAVI ,  HOLLARS DENNIS R

IPC分类号： B32B15/04 ,  B32B9/00 ,  H01L31/042 ,  H01L51/50

CPC分类号： H01L31/0203 ,  C23C14/08 ,  C23C14/562 ,  C23C16/44 ,  C25B9/08 ,  G02F1/0107 ,  G02F1/1339 ,  G02F1/167 ,  H01L21/56 ,  H01L23/564 ,  H01L31/03926 ,  H01L31/049 ,  H01L51/5256 ,  H01L51/5259 ,  H01L2924/0002 ,  Y02E10/541 ,  Y02E10/542 ,  Y02E10/549 ,  Y02P20/134 ,  Y10T428/265 ,  Y10T428/31504 ,  Y10T428/31678 ,  H01L2924/00

公开(公告)号：EP2811511A4

公开(公告)日：2015-11-18

申请号：EP12837604

申请日：2012-01-31

申请人： SHINDENGEN ELECTRIC MFG

发明人： MUYARI KOYA ,  ITO KOJI ,  OGASAWARA ATSUSHI ,  ITO KAZUHIKO

IPC分类号： H01L21/316 ,  C03C3/066 ,  C03C3/093 ,  H01L21/329 ,  H01L23/29 ,  H01L23/31 ,  H01L29/06 ,  H01L29/47 ,  H01L29/861 ,  H01L29/872

CPC分类号： H01L23/564 ,  C03C3/04 ,  C03C3/066 ,  C03C3/093 ,  H01L21/02112 ,  H01L21/02161 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02282 ,  H01L21/30604 ,  H01L23/291 ,  H01L23/3178 ,  H01L29/0649 ,  H01L29/0661 ,  H01L29/66136 ,  H01L29/861 ,  H01L2224/06181

摘要： A glass composition for protecting a semiconductor junction is provided, wherein the glass composition for protecting a semiconductor junction contains at least SiO 2 , B 2 O 3 , Al 2 O 3 , ZnO, and at least two oxides of alkaline earth metal selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, P, As, Sb, Li, Na and K. According to the glass composition for protecting a semiconductor junction of the present invention, in the same manner as a conventional case where "a glass material containing lead silicate as a main component" is used, a semiconductor device having a high breakdown voltage can be manufactured by using a glass material containing no lead. Further, according to the glass composition for protecting a semiconductor junction, the glass composition for protecting a semiconductor junction contains at least two oxides of alkaline earth metal selected from a group consisting of CaO, MgO and BaO and hence, an average linear expansion coefficient of the glass composition at a temperature range of 50°C to 550°C becomes close to a linear expansion coefficient of silicon at a temperature range of 50°C to 550°C whereby a semiconductor device of high reliability can be manufactured.

公开(公告)号：EP2927297A1

公开(公告)日：2015-10-07

申请号：EP13858649.0

申请日：2013-11-29

申请人： LINTEC Corporation

发明人： NISHIJIMA Kenta ,  NAGANAWA Satoshi ,  FUCHI Emi

IPC分类号： C09J123/22 ,  C09J7/00 ,  C09J7/02 ,  C09J109/00 ,  H01L21/56 ,  H01L51/50 ,  H05B33/04

CPC分类号： C09J7/02 ,  B32B37/12 ,  B32B37/182 ,  B32B2307/412 ,  B32B2457/206 ,  C09J7/383 ,  C09J123/22 ,  C09J2203/326 ,  C09J2205/114 ,  C09J2400/10 ,  C09J2409/00 ,  C09J2423/00 ,  C09J2467/005 ,  C09J2467/006 ,  H01L21/565 ,  H01L23/3121 ,  H01L23/564 ,  H01L51/5246 ,  H01L2924/0002 ,  H05B33/04 ,  H01L2924/00

摘要： The present invention provides: an adhesive composition for sealing an electronic device, the adhesive composition comprising an isobutylene-isoprene copolymer as a main component, the isobutylene-isoprene copolymer having a content of repeating units derived from isoprene of 0.1 to 99 mol% based on total repeating units; an adhesive sheet comprising a gas barrier film, and an adhesive layer that is formed on the gas barrier film, the gas barrier film having a water vapor transmission rate at a temperature of 40°C and a relative humidity of 90% of 0.1 g/m 2 /day or less, and having a total light transmittance of 80% or more, and the adhesive layer comprising an adhesive composition that comprises an isobutylene-isoprene copolymer as a main component; and an electronic device or the like in which the adhesive composition and the adhesive sheet are used as a sealant for an organic electroluminescent element or the like. According to the present invention, provided are :an adhesive composition that is useful as a material for forming an adhesive layer that exhibits an excellent water barrier capability and excellent adhesion; an adhesive sheet; and an electronic device or the like.

公开(公告)号：EP2775514A2

公开(公告)日：2014-09-10

申请号：EP13191897.1

申请日：2013-11-07

申请人： OMRON CORPORATION

发明人： Sanda, Takaaki ,  Nishikawa, Kazuyoshi ,  Sugimoto, Makoto ,  Yuri, Takashi ,  Honjo, Takuya ,  Kameda, Takamasa ,  Inoue, Daisuke ,  Hirao, Koichi ,  Kotani, Shinjiro ,  Nakayama, Yusuke

IPC分类号： H01L23/24 ,  H01L23/00

CPC分类号： H01L23/24 ,  G01D11/245 ,  H01L23/564 ,  H01L2924/0002 ,  H03K17/9505 ,  H03K17/9522 ,  H01L2924/00

摘要： Degradation of post-sealing water-resistant performance is suppressed. An electronic device includes: a case member that includes a first end portion (310a) and a second end portion (310b); a flow control member (66) that includes a first opening (66a) and a second opening (66b); and a sealing resin (120) that is formed by solidification of a resin injected through a gate after the resin spreads into the case member by flowing in a first flow path between an inner surface (310k) of the case member and an outer surface (66n) of the flow control member (66) and a second flow path (66G) in the flow control member (66). Cross sectional shapes of the first flow path and the second flow path are determined such that the resin flowing in the first flow path reaches the second opening (66b) earlier than the resin flowing in the second flow path.

摘要翻译： 防止后封胶防水性能下降。 电子设备包括：壳体，其包括第一端部（310a）和第二端部（310b）; 流动控制构件（66），其包括第一开口（66a）和第二开口（66b）; 以及密封树脂（120），其通过在所述壳体构件的内表面（310k）和外表面之间的第一流路中流动而在所述树脂扩散到所述壳体构件中之后通过浇口注入的树脂凝固而形成 66n）和流量控制构件（66）中的第二流路（66G）。 确定第一流路和第二流路的截面形状，使得在第一流路中流动的树脂比在第二流路中流动的树脂更早地到达第二开口（66b）。