公开(公告)号：EP1566210A4

公开(公告)日：2006-06-21

申请号：EP03777165

申请日：2003-11-28

Applicant: KANTO DENKA KOGYO KK ,  RES INST INNOVATIVE TECH EARTH ,  NAT INST OF ADVANCED IND SCIEN

Inventor： NAKAZAWA YASUO ,  FUKUSHIMA MORIYUKI ,  SUDA KENSUKE ,  SEKIYA AKIRA

IPC: B01D53/68 ,  B01D53/70 ,  B01J20/20

CPC classification number: B01D53/70 ,  B01D53/685 ,  B01D2251/30 ,  B01D2251/40 ,  B01D2253/102 ,  B01D2253/108 ,  B01D2257/2027 ,  B01D2257/2066 ,  B01D2258/0216

Abstract: A method for removing harmful substances in a vent gas containing a halogen or halogen compound gas remaining in the pipeline of a cylinder cabinet, which comprises contacting said vent gas with a treating agent comprising an alkaline earth metal compound, an alkali metal compound, zeolite, and a carbonaceous material.

Abstract translation: 一种用于除去残留在气缸柜的管道中的含有卤素或卤素化合物气体的排出气体中的有害物质的方法，该方法包括使所述排放气体与包含碱土金属化合物，碱金属化合物，沸石， 和碳质材料。

公开(公告)号：EP2581360A4

公开(公告)日：2013-08-28

申请号：EP11795695

申请日：2011-06-13

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： QUAN HENG-DAO ,  TAMURA MASANORI ,  MIZUKADO JUNJI ,  SEKIYA AKIRA

IPC: C07C17/354 ,  B01J23/44 ,  B01J23/50 ,  B01J27/10 ,  B01J27/13 ,  B01J27/32 ,  B01J38/10 ,  C07B61/00 ,  C07C17/358 ,  C07C21/18

CPC classification number: C07C17/354 ,  B01J21/04 ,  B01J21/18 ,  B01J23/44 ,  B01J23/644 ,  B01J23/66 ,  B01J27/12 ,  B01J27/13 ,  B01J35/0006 ,  B01J35/1014 ,  B01J37/0201 ,  B01J37/0205 ,  B01J37/0207 ,  B01J37/16 ,  B01J37/18 ,  C07C17/358 ,  C07C21/22 ,  C07C21/18

公开(公告)号：EP1619170A4

公开(公告)日：2008-12-17

申请号：EP04720210

申请日：2004-03-12

Applicant: RES INST INNOVATIVE TECH EARTH ,  NAT INST OF ADVANCED IND SCIEN

Inventor： MITSUI YUKI ,  YONEMURA TAISUKE ,  OHIRA YUTAKA ,  SEKIYA AKIRA

IPC: C01B31/00 ,  C01B31/28

CPC classification number: C01B32/80

Abstract: A process for safely and easily producing high-purity carbonyl fluoride having a reduced carbon tetrafluoride content, which comprises feeding carbon monoxide and fluorine to a reactor and reacting the carbon monoxide with the fluorine under such conditions that the pressure inside the reactor is lower than the atmospheric pressure.

公开(公告)号：EP1612856A4

公开(公告)日：2009-01-28

申请号：EP04720142

申请日：2004-03-12

Applicant: RES INST INNOVATIVE TECH EARTH ,  NAT INST OF ADVANCED IND SCIEN

Inventor： SAKAI KATSUO ,  ABE KAORU ,  OKURA SEIJI ,  SAKAMURA MASAJI ,  MURATA HITOSHI ,  KAMEDA KENJI ,  WANI ETSUO ,  SEKIYA AKIRA

IPC: H01L21/31 ,  C23C16/44 ,  C23C16/52

CPC classification number: C23C16/52 ,  C23C16/4405

Abstract: A method of cleaning a CVD device wherein, by-products sticking to the inner wall of a reaction chamber (12) is cleaned, and the cleaning can be finished on an accurate time. The light intensity of F radicals in a reaction chamber (12) is monitored by an emission spectrometer (40). After the light intensity reaches the saturation point of light intensity, cleaning is finished in a predetermined time. The concentration of SiF4 in the exhausted gas from the reaction chamber (12) is monitored by an infrared spectroscopy (50). When the SiF4 concentration reaches a predetermined cleaning end point, the cleaning is ended. In place of the emission spectrometer (40), a mass spectrograph (70) for measuring the F-intensity in the reaction chamber (12) can be installed.

公开(公告)号：EP2292555A4

公开(公告)日：2012-07-11

申请号：EP09746679

申请日：2009-05-15

Applicant: TOKUYAMA CORP ,  NAT INST OF ADVANCED IND SCIEN

Inventor： ISHIZU SUMITO ,  SEKIYA AKIRA ,  FUKUDA KENTARO ,  SUYAMA TOSHIHISA

IPC: C01B9/08 ,  C01F17/00 ,  C01G1/06 ,  C30B15/00 ,  C30B15/08 ,  C30B29/12 ,  C30B35/00 ,  G02B1/02

CPC classification number: C01B9/08 ,  C01F17/0031 ,  C01G1/06 ,  C01P2002/84 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2006/80 ,  C30B15/00 ,  C30B15/08 ,  C30B29/12 ,  C30B35/007

公开(公告)号：EP1320875A4

公开(公告)日：2008-01-23

申请号：EP01970182

申请日：2001-09-21

Applicant: TOKYO ELECTRON LTD ,  RENESAS TECH CORP ,  NEC ELECTRONICS CORP ,  MATSUSHITA ELECTRIC IND CO LTD ,  DAIKIN IND LTD ,  ANELVA CORP ,  SANYO ELECTRIC CO ,  HITACHI INT ELECTRIC INC ,  SONY CORP ,  KANTO DENKA KOGYO KK ,  NAT INST OF ADVANCED IND SCIEN

Inventor： SEKIYA AKIRA ,  FUKAE KATSUYA ,  MITSUI YUKI ,  TOMIZAWA GINJIRO

IPC: H01L21/205 ,  B08B7/00 ,  C09K13/00 ,  C09K13/08 ,  C23C16/44 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C09K13/00 ,  B08B7/00 ,  C23C16/4405 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137

Abstract: This invention relates to gas compositions comprising fluorine-containing nitrogen compounds, which compositions are useful for cleaning the interior of reactors, such as those of CVD (chemical vapor deposition) equipment and also for etching films of silicon-containing compounds. Advantageously, the gas compositions are environmentally friendly and have little or no tendency to generate an effluent gas stream containing noxious ingredients, such as CF4, NF3 and the like. There are provided: a gas composition for cleaning the interior of film deposition chambers contaminated with silicic deposition, which comprises F3NO or combinations of F3NO with O2 and/or inert gas(es) or which comprises FNO or a combination of FNO with O2 and/or inert gas(es); and also a similar gas composition for etching films of silicon-containing compounds, e.g. films of semiconductive materials.

公开(公告)号：EP1542264A4

公开(公告)日：2007-03-28

申请号：EP03712689

申请日：2003-03-13

Applicant: RES INST INNOVATIVE TECH EARTH ,  NAT INST OF ADVANCED IND SCIEN

Inventor： BEPPU TATSURO ,  SAKAI KATSUO ,  OKURA SEIJI ,  SAKAMURA MASAJI ,  ABE KAORU ,  MURATA HITOSHI ,  WANI ETSUO ,  KAMEDA KENJI ,  MITSUI YUKI ,  OHIRA YUTAKA ,  YONEMURA TAISUKE ,  SEKIYA AKIRA

IPC: H01L21/306 ,  B08B7/00 ,  C23C16/44 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/31

CPC classification number: B08B7/0035 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  Y02C20/30 ,  Y02P70/605

Abstract: A method of cleaning a CVD apparatus that enables efficiently removing by-products, such as SiO2 and Si3N4, having stuck to and deposited on the surfaces of inside wall, electrode, etc. of a reaction chamber during the operation of film formation, and that minimizes the volume of cleaning gas discharged so as to decrease influences on global warming and other environmental matter, thereby enabling cost reduction. A fluorinated compound is energized so that the fluorinated compound is reacted to thereby form fluorine gas component and components other than the fluorine gas component. The thus formed fluorine gas component and components other than the fluorine gas component are separated from each other, and the separated fluorine gas component is purified. The separated and purified fluorine gas is converted to plasma by a CVD apparatus after the operation of film formation on a substrate, which plasma removes by-products sticking to the inside of reaction chamber.