公开(公告)号：EP0875935A3

公开(公告)日：2000-08-02

申请号：EP98107645.8

申请日：1998-04-27

申请人： NEC Corporation

发明人： Shoji, Kazutaka

IPC分类号： H01L23/485

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/05571 ,  H01L2224/10126 ,  H01L2224/11009 ,  H01L2224/11334 ,  H01L2224/13006 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13564 ,  H01L2224/1357 ,  H01L2224/1369 ,  H01L2224/16 ,  H01L2224/16237 ,  H01L2224/81011 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81355 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15787 ,  H01L2924/19042 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device comprises a plurality of solder bumps (14) each formed on a pad 13c of a semiconductor device (11). The top of each of the solder bumps (14) is covered with a masking film (16), and the bases of the solder bumps (14) are buried with a reinforcement film (15). The oxidation of the solder bumps (14) is prevented by the masking film (16) and the reinforcement film (16), the latter also undertaking the thermal stress generated between the semiconductor chip (12) and the circuit board (21). The mounting is conducted with the masking film (16) remaining on the top of the solder ball (14), which breaks the masking film (16) and connected to the pad (22) on the circuit board (21).

摘要翻译： 半导体器件包括分别形成在半导体器件（11）的焊盘13c上的多个焊料凸块（14）。 每个焊料凸块（14）的顶部被掩模膜（16）覆盖，并且焊料凸点（14）的基底用增强膜（15）掩埋。 通过掩模膜（16）和加强膜（16）防止焊料凸块（14）的氧化，后者也承受在半导体芯片（12）和电路板（21）之间产生的热应力。 该安装是用掩蔽膜（16）保留在焊球（14）的顶部上进行的，该遮蔽膜（16）破坏了掩模膜（16）并连接到电路板（21）上的焊盘（22）。

公开(公告)号：EP0875935A2

公开(公告)日：1998-11-04

申请号：EP98107645.8

申请日：1998-04-27

申请人： NEC Corporation

发明人： Shoji, Kazutaka

IPC分类号： H01L23/485

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/05571 ,  H01L2224/10126 ,  H01L2224/11009 ,  H01L2224/11334 ,  H01L2224/13006 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13564 ,  H01L2224/1357 ,  H01L2224/1369 ,  H01L2224/16 ,  H01L2224/16237 ,  H01L2224/81011 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81355 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15787 ,  H01L2924/19042 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device comprises a plurality of solder bumps (14) each formed on a pad 13c of a semiconductor device (11). The top of each of the solder bumps (14) is covered with a masking film (16), and the bases of the solder bumps (14) are buried with a reinforcement film (15). The oxidation of the solder bumps (14) is prevented by the masking film (16) and the reinforcement film (16), the latter also undertaking the thermal stress generated between the semiconductor chip (12) and the circuit board (21). The mounting is conducted with the masking film (16) remaining on the top of the solder ball (14), which breaks the masking film (16) and connected to the pad (22) on the circuit board (21).

公开(公告)号：EP0831525A2

公开(公告)日：1998-03-25

申请号：EP97116401.7

申请日：1997-09-19

申请人： NEC CORPORATION

发明人： Shoji, Kazutaka

IPC分类号： H01L21/48 ,  H01L21/60

CPC分类号： H05K3/3436 ,  H01L21/4853 ,  H01L24/11 ,  H01L2224/10126 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15787 ,  H01L2924/351 ,  H05K2201/10977 ,  H05K2203/0582 ,  Y02P70/613 ,  H01L2924/00

摘要： Disclosed is a method for forming a protruding electrode which has the steps of: forming a first film of an organic or polymeric material on the top portion of a protruding electrode formed on a protruding-electrode-forming plane; then forming a second film of a polymeric material on the protruding-electrode-forming plane to bury the base portion of the protruding electrode; and removing the first film after the second film is cured; wherein the first film is of the organic or polymeric material which has no affinity with the polymeric material of the second film.

摘要翻译： 公开了一种形成突起电极的方法，其具有以下步骤：在形成在突起电极形成平面上的突出电极的顶部上形成有机或聚合材料的第一膜; 然后在突出电极形成平面上形成聚合物材料的第二膜，以埋置突出电极的基部; 以及在所述第二膜固化之后移除所述第一膜; 其中所述第一膜是与所述第二膜的聚合物材料没有亲和性的有机或聚合材料。

公开(公告)号：EP0831525A3

公开(公告)日：1999-12-08

申请号：EP97116401.7

申请日：1997-09-19

申请人： NEC CORPORATION

发明人： Shoji, Kazutaka

IPC分类号： H01L21/48 ,  H01L21/60

CPC分类号： H05K3/3436 ,  H01L21/4853 ,  H01L24/11 ,  H01L2224/10126 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15787 ,  H01L2924/351 ,  H05K2201/10977 ,  H05K2203/0582 ,  Y02P70/613 ,  H01L2924/00

摘要： Disclosed is a method for forming a protruding electrode which has the steps of: forming a first film of an organic or polymeric material on the top portion of a protruding electrode formed on a protruding-electrode-forming plane; then forming a second film of a polymeric material on the protruding-electrode-forming plane to bury the base portion of the protruding electrode; and removing the first film after the second film is cured; wherein the first film is of the organic or polymeric material which has no affinity with the polymeric material of the second film.