公开(公告)号：EP3098837A3

公开(公告)日：2017-02-08

申请号：EP16001177.1

申请日：2016-05-24

申请人： ASM Technology Singapore Pte Ltd.

发明人： LAU, Siu Wing ,  HUNG, Kin Yik ,  AU, Yuk Cheung ,  LAI, Wing Chiu ,  LEE, Man Leo ,  GO, Sai Yuen

IPC分类号： H01L21/67 ,  H01L21/603

CPC分类号： H01L24/75 ,  H01L21/67742 ,  H01L24/81 ,  H01L2224/7501 ,  H01L2224/751 ,  H01L2224/75101 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75305 ,  H01L2224/7565 ,  H01L2224/75804 ,  H01L2224/75821 ,  H01L2224/75824 ,  H01L2224/75841 ,  H01L2224/759 ,  H01L2224/81011 ,  H01L2224/81022 ,  H01L2224/81024 ,  H01L2224/81075 ,  H01L2224/81093 ,  H01L2224/81203 ,  H01L2924/00012

摘要： A die bonding apparatus (10) comprises a first inert gas container (40) having a first inert gas concentration and a second inert gas container (50) having a second inert gas concentration enclosed within the first inert gas container (40). The second inert gas concentration is higher than the first inert gas concentration. The die bonding apparatus (10) further comprises a bond head (52) located in the second inert gas container (50) for receiving a die (24) for bonding and a third inert gas container (80) having an inert gas environment that is separate from the first and second inert gas containers (40, 50) and where a substrate (26) is locatable for die bonding. The bond head (52) is operative to move the die (24) between a first position within the second inert gas container (50) and a second position within the third inert gas container (80) to bond the die (24) onto the substrate (26) located in the third inert gas container (80). The third inert gas container (80) may comprise a portion of a bond stage (60) enclosed by the walls (62) on the sides, by a bond stage pedestal (66) on the bottom and by the first inert gas container (40) base plate (42) on the top. The bond stage (60) is movable for receiving the substrate (26) to be processed and below the first inert gas container (40). The bond stage walls (62) may comprise a plurality of inert gas outlets (64, 68, 69) for expelling inert gas towards the first inert gas container (40) to form an air curtain to restrict ambient air from entering the third inert gas container (80).

摘要翻译： 芯片接合装置（10）包括具有第一惰性气体浓度的第一惰性气体容器（40）和封闭在第一惰性气体容器（40）内的第二惰性气体浓度的第二惰性气体容器（50）。 第二惰性气体浓度高于第一惰性气体浓度。 芯片接合装置（10）还包括位于第二惰性气体容器（50）中的用于接收用于接合的模具（24）的接合头（52）和具有惰性气体环境的第三惰性气体容器（80） 与第一和第二惰性气体容器（40,50）分离，并且其中基板（26）可定位用于管芯接合。 接合头（52）可操作以使模具（24）在第二惰性气体容器（50）内的第一位置和第三惰性气体容器（80）内的第二位置之间移动，以将模具（24）接合到 基板（26）位于第三惰性气体容器（80）中。 第三惰性气体容器（80）可以包括由侧壁上的壁（62）包围的结合台（60）的一部分，底部上的结合台基座（66）和第一惰性气体容器（40） ）底板（42）。 接合台（60）可移动以接收待处理的基板（26）并在第一惰性气体容器（40）的下方。 结合阶段壁（62）可以包括多个惰性气体出口（64,68,69），用于朝向第一惰性气体容器（40）排出惰性气体，以形成空气幕，以限制环境空气进入第三惰性气体 容器（80）。

公开(公告)号：EP2966677A1

公开(公告)日：2016-01-13

申请号：EP14176028.0

申请日：2014-07-07

申请人： NXP B.V.

发明人： Walczyk,, Sven ,  de Beer,, Johan Rene ,  Eltink,, Erik ,  Mavinkurve,, Amar

IPC分类号： H01L21/60 ,  H01L23/495 ,  H01L21/48

CPC分类号： H01L24/81 ,  B23K1/0016 ,  B23K1/20 ,  H01L23/49572 ,  H01L23/49586 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/10175 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/81011 ,  H01L2224/81022 ,  H01L2224/81097 ,  H01L2224/81121 ,  H01L2224/81191 ,  H01L2224/8136 ,  H01L2224/81395 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/8146 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2924/014 ,  H01L2924/00014

摘要： A method of attaching an electronic component (202) to a metal substrate (204) such as a lead frame, wherein the electronic component (202) comprises an exposed solder region comprising a solder bump (206) and flux (208) thereon, the method comprising: forming a metal-based compound layer (210) (a metal oxide, metal sulphide or metal nitride layer) on the metal substrate (204); placing the electronic component (202) on the metal substrate (204) such that the solder region is in contact with a contact region of the metal-based compound layer (210); and heating the solder region such that the contact region of the metal-based compound layer (210) dissolves under the influence of the flux (208) and the reflowed solder bump (206) forms an electrical connection between the electronic component (202) and the metal substrate (204). The metal-based compound layer (210) can have a minimum thickness of 10 nm. The provision of the metal-based compound layer (210) on the metal substrate (204) may prevent or reduce excessive flow-out of flux (208) and/or solder (206) during heating in the reflow process.

摘要翻译： 附连到电子元件（202）在金属基板（204）的方法，包括：如引线框，worin电子部件（202）包括暴露焊料区域包括焊料凸块（206）和通量（208）在其上，该 方法包括：形成在金属基片（204）上的基于金属的化合物层（210）（金属氧化物，金属硫化物或金属氮化物层）; 将所述电子部件（202）上的金属基片（204）检查做的焊接区域与所述基于金属的化合物层（210）的接触区域接触; 以及加热检查的焊料区域做了基于金属的化合物层（210）的通量（208）的作用下溶解，回流的焊料凸点（206）的电子元件（202）之间的电连接的形式的接触区域和 所述金属基体（204）。 基于金属的化合物层（210）可具有10纳米的最小厚度。在所述金属基片（204）的基于金属的化合物层（210）的提供可以防止或减少过度流出通量的（208） 和/或在回流工艺期间加热焊料（206）。

公开(公告)号：EP2549530A4

公开(公告)日：2013-11-20

申请号：EP11800115

申请日：2011-06-03

申请人： HUAWEI DEVICE CO LTD

发明人： LU DAVID

IPC分类号： H01L23/29 ,  H01L21/56 ,  H01L23/485

CPC分类号： H05K13/04 ,  H01L21/563 ,  H01L23/293 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/11822 ,  H01L2224/131 ,  H01L2224/1369 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81011 ,  H01L2224/81355 ,  H01L2224/81815 ,  H01L2224/81862 ,  H01L2224/81905 ,  H01L2924/01006 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/014 ,  H05K1/181

摘要： The present invention relates to processing of PCBA, and provides a method for enhancing reliability of a welding spot of a chip, a printed circuit board and an electronic device. The method for enhancing reliability of the welding spot of the chip includes: dipping an epoxy flux on a weld leg of a chip or coating, with epoxy flux, a bonding pad corresponding to the weld leg of the chip, and mounting the chip to the bonding pad; and performing reflow processing on the bonding pad mounted with the chip, and finishing curing the epoxy flux. By applying the present invention, an Underfill process is not required, thereby reducing the cost of the device and improving the manufacturing efficiency.

公开(公告)号：EP2206145A2

公开(公告)日：2010-07-14

申请号：EP08835829.6

申请日：2008-09-26

申请人： Tessera, Inc.

发明人： KWON, Jinsu

IPC分类号： H01L21/60

CPC分类号： H01L24/14 ,  H01L21/4853 ,  H01L21/563 ,  H01L23/3178 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/1147 ,  H01L2224/13015 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1412 ,  H01L2224/16 ,  H01L2224/16058 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/73204 ,  H01L2224/81001 ,  H01L2224/81011 ,  H01L2224/81136 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/8183 ,  H01L2224/81894 ,  H01L2224/831 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/2064 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/29099

摘要： A packaged microelectronic assembly includes a microelectronic element (104) having a front surface (122) and a plurality of first solid metal posts (110) extending away from the front surface (122). Each of the first posts (110) has a width in a direction of the front surface (122) and a height extending from the front surface (122), wherein the height (H2) is at least half of the width (Wl). There is also a substrate (102) having a top surface (101) and a plurality of second solid metal posts (108) extending from the top surface (102) and joined to the first solid metal posts (110).

公开(公告)号：EP1818351A1

公开(公告)日：2007-08-15

申请号：EP07002620.8

申请日：2007-02-07

申请人： National Starch and Chemical Investment Holding Corporation

发明人： Yue Xiao, Allison ,  Dutt, Gyanendra

IPC分类号： C08G59/68 ,  C08L63/00 ,  H01L21/56

CPC分类号： C08G59/686 ,  C08G59/5093 ,  C08G59/68 ,  H01L21/563 ,  H01L23/293 ,  H01L24/29 ,  H01L24/81 ,  H01L2224/274 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/81011 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  Y10T428/31515 ,  H01L2924/01047 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/0665

摘要： A curable underfill encapsulant composition that is applied directly onto semiconductor wafers before the wafers are diced into individual chips. The composition comprises a thermally curable epoxy resin, a solvent, an imidazole phosphate salt catalyst, fluxing agents, and optionally, wetting agents. Various other additives, such as defoaming agents, adhesion promoters, flow additives and rheology modifiers may also be added as desired. The underfill encapsulant is B-stageable to provide a coating on the wafer that is smooth, non-tacky and will allow the wafer to be cleanly diced into individual chips. A method for producing an electronic package containing the B-stageable material may also utilize an unfilled liquid curable fluxing material on the substrate to which the chip is to be attached.

摘要翻译： 将晶片切割成单独的芯片之前的可固化的底层填充密封剂组合物也被直接施加到半导体晶片。 该组合物包括热固化环氧树脂，溶剂，任选至咪唑磷酸盐催化剂，助熔剂，和，润湿剂。 各种其它添加剂，颜色：根据需要，例如消泡剂，增粘剂，流动添加剂和流变改性剂可因此被加入。 底层填充密封剂是B阶能够提供在晶片上的涂层确实是光滑的，非粘性的，并且将允许所述晶片被干净切割成单独的芯片。 因此，一种用于在电子封装含B阶能材料制造方法可以利用未填充的液体可固化助熔材料到所述芯片将被附着的底物。

公开(公告)号：EP1750305A2

公开(公告)日：2007-02-07

申请号：EP06076339.8

申请日：2006-06-30

申请人： Delphi Technologies, Inc.

发明人： Stepniak, Frank ,  Higdon, William D.

IPC分类号： H01L23/485

CPC分类号： H01L24/10 ,  H01L24/05 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/81011 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/92125 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/00

摘要： An integrated circuit (IC) (200) includes a semiconductor material (102), electronic circuitry (104) formed on the semiconductor material (102), a contact layer (106) formed on the electronic circuitry (104), a final passivation layer (108) formed on the contact layer (106) and an under-bump metallurgy (UBM) (216) formed on at least a portion of the final passivation layer (108). The contact layer (106) includes a plurality of contacts pads (106A) for providing external access to the electronic circuitry (104). The final passivation layer (108) includes a plurality of windows that extend through the final passivation layer (108) to the contact pads (106A). The UBM (216) includes an aluminum layer having a thickness of about 800 angstroms to about 1200 angstroms, a nickel/vanadium (Ni/V) layer having a thickness of about 800 angstroms to about 1200 angstroms and a copper (Cu) layer having a thickness of about 800 angstroms to about 1200 angstroms.

摘要翻译： 集成电路（IC）（200）包括半导体材料（102），形成在半导体材料（102）上的电子电路（104），形成在电子电路（104）上的接触层（106），最终钝化层 （108），形成在所述接触层（106）上的凸起下金属（UBM）（216）和形成在所述最终钝化层（108）的至少一部分上的凸点状金属（UBM）。 接触层（106）包括用于提供对电子电路（104）的外部访问的多个接触焊盘（106A）。 最终钝化层（108）包括延伸穿过最终钝化层（108）到接触焊盘（106A）的多个窗口。 UBM（216）包括厚度约800埃至约1200埃的铝层，厚度约800埃至约1200埃的镍/钒（Ni / V）层和具有 约800埃至约1200埃的厚度。

公开(公告)号：EP1736273A1

公开(公告)日：2006-12-27

申请号：EP05709373.4

申请日：2005-01-27

申请人： Matsushita Electric Industries Co., Ltd.

发明人： MAEDA, Tadashi c/o Matsushita Electric Industrial ,  SAKAI, Tadahiko c/o Matsushita Electric Industrial

IPC分类号： B23K35/363 ,  B23K3/00 ,  H05K3/34 ,  B23K101/42

CPC分类号： B23K35/0244 ,  B23K35/025 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/36 ,  B23K35/3613 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/11003 ,  H01L2224/11822 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/1403 ,  H01L2224/16 ,  H01L2224/81011 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/12044 ,  H05K3/3489 ,  H05K2201/0215 ,  Y10T29/49144 ,  H01L2224/29099 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2924/00

摘要： There is provided a flux for soldering and a soldering process which form better solder connection without the occurrence of the poor connection nor the insulation degradation.
Such flux which is placed between a solder portion formed on a first electrode and a second electrode when the first electrode is soldered to the second electrode contains:
a liquid base material made of a resin component which is dissolved in a solvent,
an active component which removes an oxide film, and
a metal powder made of a metal of which melting point is higher than that of a solder material which forms the solder portion, and
the flux contains the metal powder in an amount in the range between 1 % and 9 % by volume based on a volume of the flux.

摘要翻译： 提供了用于焊接和焊接工艺的焊剂，其形成更好的焊接连接，而不会发生不良连接和绝缘劣化。 当将第一电极焊接到第二电极时，放置在形成在第一电极上的焊料部分和第二电极之间的焊剂包含：溶解在溶剂中的由树脂成分制成的液体基材，活性成分 除去氧化膜和由熔点高于形成焊料部分的焊料材料的金属制成的金属粉末，并且焊剂含有金属粉末的量在1％至9％的范围内， 基于通量的体积。

公开(公告)号：EP1705971A3

公开(公告)日：2006-12-20

申请号：EP06013130.7

申请日：2005-06-21

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Sakai, Tadahiko ,  Maeda, Tadashi

IPC分类号： H05K3/34

CPC分类号： H05K3/3436 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/1182 ,  H01L2224/11822 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13164 ,  H01L2224/16 ,  H01L2224/29499 ,  H01L2224/75 ,  H01L2224/75301 ,  H01L2224/758 ,  H01L2224/81011 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H05K3/3489 ,  H05K2201/0215 ,  H05K2201/035 ,  H05K2203/0338 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/29099

摘要： An electronic component disposing device for disposing an electronic component (6) formed with a solder bump (7) on a substrate (12), the electronic component disposing device comprising: a thin film forming mechanism provided with a stage (8) having a smooth plane and a squeegee (9) for spreading flux (10) containing metal powder (16) in a membranous form on the smooth plane by relatively moving the squeegee (9) against the smooth plane; a pressurizing mechanism (14) for embedding the metal powder (16) on a surface of the solder bump (7) by pressing the solder bump against a portion where a thin film (10a) is formed on the smooth plane; and a disposing mechanism for positioning and disposing the solder bump (7), in a state in which the metal powder (16) is embedded, on an electrode (12a) of the substrate (12) and an electronic component disposing method.

公开(公告)号：EP1705971A2

公开(公告)日：2006-09-27

申请号：EP06013130.7

申请日：2005-06-21

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Sakai, Tadahiko ,  Maeda, Tadashi

IPC分类号： H05K3/34

CPC分类号： H05K3/3436 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/1182 ,  H01L2224/11822 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13164 ,  H01L2224/16 ,  H01L2224/29499 ,  H01L2224/75 ,  H01L2224/75301 ,  H01L2224/758 ,  H01L2224/81011 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H05K3/3489 ,  H05K2201/0215 ,  H05K2201/035 ,  H05K2203/0338 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/29099

摘要： An electronic component disposing device for disposing an electronic component formed with a solder bump on a substrate, the electronic component disposing device comprising: a thin film forming mechanism provided with a stage having a smooth plane and a squeegee for spreading flux containing metal powder in a membranous form on the smooth plane by relatively moving the squeegee against the smooth plane; a pressurizing mechanism for embedding the metal powder on a surface of the solder bump by pressing the solder bump against a portion where a thin film is formed on the smooth plane; and a disposing mechanism for positioning and disposing the solder bump, in a state in which the metal powder is embedded, on an electrode of the substrate and an electronic component disposing method.

摘要翻译： 用于电子元件的配置处置装置的电子部件的基片（6）形成有焊料凸块（7）上的（12），所述电子元件配置装置，包括：具有光滑设置有一个阶段的薄膜形成机构（8） 平面和用于通过相对地移动所述刮板在光滑平面的膜状形式扩散通量（10）包含金属粉末（16）面的刮板（9）（9）抵靠平滑; 的加压机构平面（14），用于通过按压所述焊料凸块，其中对薄膜（10A）是对平滑形成的部分的焊料凸块（7）的表面上嵌入金属粉末（16）; 和用于定位和布置所述焊料凸块设置一个机构（7）的状态下的基板，其中所述金属粉末（16）嵌入，在与（12）的电极（12a）和电子部件处理方法。

公开(公告)号：EP1025587A4

公开(公告)日：2000-10-04

申请号：EP98935858

申请日：1998-07-21

申请人： AGUILA TECHNOLOGIES INC

发明人： CAPOTE M ALBERT ,  ZHOU ZHIMING ,  ZHU XIAOQI ,  ZHOU LIGUI

IPC分类号： B23K35/02 ,  B23K35/36 ,  B32B7/12 ,  C09J4/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/60 ,  H01L23/29 ,  H01L23/433 ,  H01L23/48 ,  H01L23/498 ,  H05K1/09 ,  H05K3/32

CPC分类号： H01L24/81 ,  B23K35/025 ,  B23K35/3613 ,  B23K35/3618 ,  B32B7/12 ,  C09J4/00 ,  H01L21/563 ,  H01L23/293 ,  H01L23/4334 ,  H01L23/49827 ,  H01L23/49883 ,  H01L24/11 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/1182 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/27436 ,  H01L2224/27602 ,  H01L2224/27614 ,  H01L2224/27618 ,  H01L2224/29 ,  H01L2224/29082 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/29562 ,  H01L2224/2969 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81011 ,  H01L2224/81024 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83856 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/3511 ,  H05K1/095 ,  H05K3/321 ,  C08F222/1006 ,  C08F222/20 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199

摘要： A simplified process for flip-chip attachment of a chip to a substrate is provided by pre-coating the chip with an encapsulant underfill material having separate discrete solder columns therein to eliminate the conventional capillary flow underfill process. Such a structure permits incorporation of remeltable layers for rework, test, or repair. It also allows incorporation of electrical redistribution layers. In one aspect, the chip and pre-coated encapsulant are placed at an angle to the substrate and brought into contact with the pre-coated substrate, then the chip and pre-coated encapsulant are pivoted about the first point of contact, expelling any gas therebetween until the solder bumps on the chip are fully in contact with the substrate. There is also provided a flip-chip configuration having a complaint solder/flexible encapsulant understructure that deforms generally laterally with the substrate as the substrate undergoes expansion or contraction. With this configuration, the complaint solder/flexible encapsulant understructure absorbs the strain caused by the difference in the thermal coefficients of expansion between the chip and the substrate without bending the chip and substrate.