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1.发明公开HIP bonded body of beryllium member and copper alloy member and method of producing the same 有权Durch heissisostatisches Pressen verbundener Beryllium-KupferKörperund dessen Herstellungsverfahren
公开(公告)号：EP1297925A2
公开(公告)日：2003-04-02
申请号：EP02021978.8
申请日：2002-09-30
申请人： NGK INSULATORS, LTD.
IPC分类号： B23K20/02 , B23K20/16 , B23K20/233 , B23K35/00 , G21C3/06
CPC分类号： G21B1/13 , B23K20/021 , B23K35/002 , B23K35/007 , B23K2203/12 , Y02E30/128 , Y10T428/12458 , Y10T428/12729 , Y10T428/12736 , Y10T428/1275 , Y10T428/12792 , Y10T428/12806 , Y10T428/12826 , Y10T428/12903 , Y10T428/1291 , Y10T428/261 , Y10T428/263 , Y10T428/265
摘要： The present invention provides a method of producing a bonded body of a beryllium member and a copper or copper alloy member, in which the bonding strength and thermal cycle resistance property are further increased. When the beryllium member and the copper or copper alloy member are bonded to each other, a thin layer of titanium, chromium, molybdenum, or silicon is formed as a diffusion inhibition layer on the surface of the beryllium; a copper layer is formed as a bonding layer on the surface of the diffusion inhibition layer; a thin layer of aluminum or zinc is formed as a bonding promotion layer on the surface of the bonding layer; and the beryllium member and the copper or copper alloy member are diffusion bonded to each other with the intermediate layer formation side being the bonding surface.
摘要翻译： 本发明提供了一种制造铍构件和铜或铜合金构件的接合体的方法，其中接合强度和耐热循环性能进一步提高。 当铍构件和铜或铜合金构件彼此结合时，在铍的表面上形成钛，铬，钼或硅的薄层作为扩散抑制层; 在扩散抑制层的表面上形成铜层作为结合层; 在接合层的表面上形成薄层的铝或锌作为接合促进层; 并且铍构件和铜或铜合金构件以中间层形成侧为接合面的方式彼此扩散接合。
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2.发明授权HIP bonded body of beryllium member and copper alloy member and method of producing the same 有权通过热等静压铍铜体以及它们的制造方法连接
公开(公告)号：EP1297925B1
公开(公告)日：2010-12-15
申请号：EP02021978.8
申请日：2002-09-30
申请人： NGK Insulators, Ltd.
IPC分类号： B23K20/02 , B23K20/16 , B23K20/233 , B23K35/00 , G21C3/06
CPC分类号： G21B1/13 , B23K20/021 , B23K35/002 , B23K35/007 , B23K2203/12 , Y02E30/128 , Y10T428/12458 , Y10T428/12729 , Y10T428/12736 , Y10T428/1275 , Y10T428/12792 , Y10T428/12806 , Y10T428/12826 , Y10T428/12903 , Y10T428/1291 , Y10T428/261 , Y10T428/263 , Y10T428/265
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3.发明公开HIP bonded body of beryllium member and copper alloy member and method of producing the same 有权通过热等静压铍铜体以及它们的制造方法连接
公开(公告)号：EP1297925A3
公开(公告)日：2004-01-07
申请号：EP02021978.8
申请日：2002-09-30
申请人： NGK INSULATORS, LTD.
IPC分类号： B23K20/02 , B23K20/16 , B23K20/233 , B23K35/00 , G21C3/06
CPC分类号： G21B1/13 , B23K20/021 , B23K35/002 , B23K35/007 , B23K2203/12 , Y02E30/128 , Y10T428/12458 , Y10T428/12729 , Y10T428/12736 , Y10T428/1275 , Y10T428/12792 , Y10T428/12806 , Y10T428/12826 , Y10T428/12903 , Y10T428/1291 , Y10T428/261 , Y10T428/263 , Y10T428/265
摘要： The present invention provides a method of producing a bonded body of a beryllium member and a copper or copper alloy member, in which the bonding strength and thermal cycle resistance property are further increased. When the beryllium member and the copper or copper alloy member are bonded to each other, a thin layer of titanium, chromium, molybdenum, or silicon is formed as a diffusion inhibition layer on the surface of the beryllium; a copper layer is formed as a bonding layer on the surface of the diffusion inhibition layer; a thin layer of aluminum or zinc is formed as a bonding promotion layer on the surface of the bonding layer; and the beryllium member and the copper or copper alloy member are diffusion bonded to each other with the intermediate layer formation side being the bonding surface.
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