公开(公告)号：EP2846958B1

公开(公告)日：2018-10-17

申请号：EP13798417.5

申请日：2013-05-13

Applicant: Siemens Energy, Inc.

Inventor： OZBAYSAL, Kazim

IPC: B23K26/34 ,  B23K35/30

CPC classification number: C23C24/106 ,  B22F3/1055 ,  B22F2003/1056 ,  B22F2007/068 ,  B23K26/32 ,  B23K26/342 ,  B23K35/007 ,  B23K35/0244 ,  B23K35/30 ,  B23K35/3033 ,  B23K2103/10 ,  B23K2103/14 ,  B23K2103/18 ,  B23K2103/26 ,  C22C19/056 ,  C22C19/057 ,  Y02P10/295

Abstract: Ni base superalloy components containing relatively large amounts of Al and Ti are known to be difficult to build up by a weld build up process without cracking. As the Al and Ti content of the superalloy is increased to improve the strength, the susceptibility to cracking is increased. It is shown herein that reducing the Gamma' phase in the additive built up material improves robustness against cracking. A stepwise, controlled heating and cooling process is described to be used in cooperation with an additive build up process to reduce the Gamma' present and thereby reduce cracking.

公开(公告)号：EP2738794B1

公开(公告)日：2018-09-12

申请号：EP12818068.4

申请日：2012-07-27

Applicant: Nissan Motor Co., Ltd. ,  Sumitomo Metal Mining Co., Ltd. ,  Fuji Electric Co., Ltd.

Inventor： TANIMOTO, Satoshi ,  ZUSHI, Yusuke ,  MURAKAMI, Yoshinori ,  ISEKI, Takashi ,  TAKAMORI, Masato ,  MATSUI, Kohei

IPC: H01L21/52 ,  B23K35/28 ,  C22C18/04 ,  B23K1/20 ,  B23K1/008 ,  B23K1/19

CPC classification number: H01L29/1602 ,  B23K1/0016 ,  B23K1/008 ,  B23K1/19 ,  B23K1/206 ,  B23K35/007 ,  B23K35/025 ,  B23K35/282 ,  B23K35/286 ,  B23K2101/34 ,  B23K2101/40 ,  B23K2101/42 ,  C22C18/04 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L29/1608 ,  H01L29/2003 ,  H01L2224/29118 ,  H01L2224/32225 ,  H01L2224/83001 ,  H01L2224/83203 ,  H01L2224/83447 ,  H01L2224/83815 ,  H01L2924/01322 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/01013 ,  H01L2924/0103 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device comprising: a step for readying each of a semiconductor element (1), a substrate (2) having Cu as a principal element at least on a surface, and a ZnAl solder chip (3') having a smaller shape than that of the semiconductor element; a step for disposing the semiconductor element and the substrate so that respective bonding surfaces face each other, and sandwiching the ZnAl eutectic solder chip between the substrate and the semiconductor element; a step for increasing the temperature of the ZnAl solder chip sandwiched between the substrate and the semiconductor element while applying a load (31) to the ZnAl solder chip, causing the ZnAl solder chip to melt, and forming a ZnAl solder layer (3); and a step for reducing the temperature of the ZnAl solder layer while applying a load to the ZnAl solder layer.

公开(公告)号：EP2786831B1

公开(公告)日：2018-06-13

申请号：EP12853569.7

申请日：2012-11-28

Applicant: UACJ Corporation

Inventor： KITAWAKI, Kotaro ,  MURASE, Takashi

IPC: B23K20/00 ,  B23K20/16 ,  B23K20/233 ,  B23K35/362 ,  B32B15/01 ,  C22C21/02 ,  C22C21/12 ,  C22C9/04 ,  B23K35/38 ,  B23K35/28 ,  B23K35/00 ,  B23K103/18 ,  B23K101/00 ,  B23K103/10 ,  B23K103/12 ,  B23K31/02 ,  C22C21/18 ,  C22C21/16 ,  C22C9/00 ,  C22C21/04 ,  C22C21/14

CPC classification number: B23K31/02 ,  B23K20/2333 ,  B23K35/002 ,  B23K35/007 ,  B23K35/286 ,  B23K35/38 ,  B23K2101/00 ,  B23K2103/10 ,  B23K2103/12 ,  B23K2103/18 ,  B32B15/017 ,  C22C9/00 ,  C22C9/04 ,  C22C21/02 ,  C22C21/14 ,  C22C21/16 ,  C22C21/18 ,  Y10T428/1275

Abstract: [Object] To provide a bonded body of an aluminum alloy and a copper alloy and a bonding method for the bonded body, the bonded body being bonded by a novel bonding method which ensures excellent bonding properties, small material deformation during bonding, and high reliability. [Solving Means] A bonded body made of an aluminum alloy and a copper alloy and obtained by employing the aluminum alloy as one member to be bonded and the copper alloy as the other member to be bonded, the one bonded member and the other bonded member being bonded to each other through metallic connection, wherein the one bonded member is made of comprising an aluminum alloy containing Cu: 3.0 mass % to 8.0 mass % and Si: 0.1 mass % to 10 mass % with balance being Al and unavoidable inevitable impurities, and satisfying the chemical formula: C + 2.4 · S · 7.8 where C (mass %) is a Cu concentration and S (mass %) is a Si composition concentration is satisfied, and the other bonded member is made of comprising a copper alloy having a higher solidus temperature than the one bonded member. A bonding method for the bonded body is also provided.

公开(公告)号：EP2740125B1

公开(公告)日：2016-09-14

申请号：EP12758524.8

申请日：2012-07-27

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： FRAYSSINES Pierre-Eric ,  BUCCI Philippe ,  LEIBOLD Jean-Marc ,  RIGAL Emmanuel

IPC: G21B1/13 ,  B23K20/233 ,  B23K35/00

CPC classification number: G21C11/028 ,  B23K20/021 ,  B23K20/16 ,  B23K20/2333 ,  B23K35/004 ,  B23K35/007 ,  B23K35/0238 ,  B23K35/32 ,  G21B1/13 ,  Y02E30/128 ,  Y10T428/12458 ,  Y10T428/12493 ,  Y10T428/12903 ,  Y10T428/1291

公开(公告)号：EP3002075A1

公开(公告)日：2016-04-06

申请号：EP15195652.1

申请日：2012-08-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MINAMIO, Masanori ,  SASAOKA, Tatsuo

IPC: B23K20/00 ,  H01L23/50 ,  H01L21/60 ,  B23K35/22

CPC classification number: H01L21/4842 ,  B23K20/023 ,  B23K20/16 ,  B23K20/227 ,  B23K20/233 ,  B23K35/002 ,  B23K35/004 ,  B23K35/007 ,  B23K2201/18 ,  B23K2201/42 ,  B23K2203/04 ,  B23K2203/10 ,  B23K2203/12 ,  H01L21/4825 ,  H01L21/4835 ,  H01L23/4334 ,  H01L23/495 ,  H01L23/49537 ,  H01L23/49575 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: First, an aqueous solution (103) containing an oxide film remover is disposed on a junction region of a first metal plate (101). Then, with the aqueous solution (103) remaining on the first metal plate (101), a second metal plate (102) is placed on the first metal plate (101). Thereafter, a load is applied to junction regions of the first metal plate (101) and the second metal plate (102) in the vertical direction, thereby joining the first metal plate (101) and the second metal plate (102) together to form a junction portion (110). In this manner, a joined body is manufactured.

公开(公告)号：EP2830080A4

公开(公告)日：2016-02-17

申请号：EP13763716

申请日：2013-03-21

Applicant: TANAKA PRECIOUS METAL IND

Inventor： MATSUO HIROSHI ,  WADA RYOE

IPC: H01H37/76 ,  B23K35/00 ,  B23K35/02 ,  B23K35/30 ,  B23K35/36 ,  C22C5/06 ,  C22C9/00 ,  C22C9/02 ,  C22C9/06 ,  C22C32/00 ,  C22F1/14 ,  H01H1/0237 ,  H01H1/025 ,  H01H37/64 ,  H01H85/36

CPC classification number: H01H37/64 ,  B23K35/007 ,  B23K35/0261 ,  B23K35/0272 ,  B23K35/302 ,  B23K35/36 ,  B23K35/3602 ,  C22C5/06 ,  C22C9/02 ,  C22C9/06 ,  H01B1/02 ,  H01H1/0237 ,  H01H1/025 ,  H01H85/36 ,  H01H2201/03

公开(公告)号：EP2782123A4

公开(公告)日：2016-01-06

申请号：EP12849763

申请日：2012-11-08

Applicant: TANAKA PRECIOUS METAL IND

Inventor： OGASHIWA TOSHINORI ,  KURITA MASAAKI ,  NISHIMORI TAKASHI ,  KANEHIRA YUKIO

IPC: H01L21/60

CPC classification number: H01L21/4814 ,  B22F7/08 ,  B23K35/007 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/322 ,  B23K2035/008 ,  B23K2201/40 ,  B32B15/018 ,  C22C5/02 ,  C22C5/04 ,  C23C18/165 ,  C25D7/00 ,  H01L21/71 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/03003 ,  H01L2224/031 ,  H01L2224/0312 ,  H01L2224/03334 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/05671 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/11334 ,  H01L2224/11505 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/12056 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01046 ,  H01L2924/00012

公开(公告)号：EP2738794A4

公开(公告)日：2015-11-04

申请号：EP12818068

申请日：2012-07-27

Applicant: NISSAN MOTOR ,  SUMITOMO METAL MINING CO ,  FUJI ELECTRIC CO LTD

Inventor： TANIMOTO SATOSHI ,  ZUSHI YUSUKE ,  MURAKAMI YOSHINORI ,  ISEKI TAKASHI ,  TAKAMORI MASATO ,  MATSUI KOHEI

IPC: H01L21/52 ,  B23K1/008 ,  B23K1/19 ,  B23K1/20 ,  B23K35/28 ,  C22C18/04

CPC classification number: H01L29/1602 ,  B23K1/0016 ,  B23K1/008 ,  B23K1/19 ,  B23K1/206 ,  B23K35/007 ,  B23K35/025 ,  B23K35/282 ,  B23K35/286 ,  B23K2201/34 ,  B23K2201/40 ,  B23K2201/42 ,  C22C18/04 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L29/1608 ,  H01L29/2003 ,  H01L2224/29118 ,  H01L2224/32225 ,  H01L2224/83001 ,  H01L2224/83203 ,  H01L2224/83447 ,  H01L2224/83815 ,  H01L2924/01322 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/01013 ,  H01L2924/0103 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device comprising: a step for readying each of a semiconductor element (1), a substrate (2) having Cu as a principal element at least on a surface, and a ZnAl solder chip (3') having a smaller shape than that of the semiconductor element; a step for disposing the semiconductor element and the substrate so that respective bonding surfaces face each other, and sandwiching the ZnAl eutectic solder chip between the substrate and the semiconductor element; a step for increasing the temperature of the ZnAl solder chip sandwiched between the substrate and the semiconductor element while applying a load (31) to the ZnAl solder chip, causing the ZnAl solder chip to melt, and forming a ZnAl solder layer (3); and a step for reducing the temperature of the ZnAl solder layer while applying a load to the ZnAl solder layer.

公开(公告)号：EP2830821A1

公开(公告)日：2015-02-04

申请号：EP13715637.8

申请日：2013-03-27

Applicant: Alfa Laval Corporate AB

Inventor： SJÖDIN, Per ,  WALTER, Kristian

IPC: B23K35/00 ,  B23K35/02 ,  B23K35/365 ,  C22C19/00

CPC classification number: B23K1/20 ,  B21D53/04 ,  B23K1/00 ,  B23K1/0008 ,  B23K1/0012 ,  B23K1/203 ,  B23K20/002 ,  B23K20/24 ,  B23K35/00 ,  B23K35/001 ,  B23K35/004 ,  B23K35/007 ,  B23K35/02 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/24 ,  B23K35/34 ,  B23K35/36 ,  B23K35/3613 ,  B23K35/362 ,  B23K35/365 ,  B23K2201/00 ,  B32B15/01 ,  C22C1/02 ,  C22C19/00 ,  C23C24/10 ,  C23C30/00 ,  C23C30/005 ,  F28D9/0012 ,  F28D9/0062 ,  F28F3/042 ,  F28F21/083 ,  F28F21/089 ,  Y10T29/49366 ,  Y10T403/479 ,  Y10T428/12778 ,  Y10T428/12986 ,  Y10T428/25 ,  Y10T428/259 ,  Y10T428/266 ,  Y10T428/273 ,  Y10T428/2924 ,  Y10T428/2982

Abstract: A method for joining a first metal part (11) with a second metal part (12), the metal parts (11,12) having a solidus temperature above 1100 QC. The method comprises: applying a melting depressant composition (14) on a surface (15) of the first metal part (11), the melting depressant composition (14) comprising a melting depressant component that comprises at least 25 wt% boron and silicon for decreasing a melting temperature of the first metal part (11 ); bringing (202) the second metal part (12) into contact with the melting depressant composition (14) at a contact point (16) on said surface (15); heating the first and second metal parts (11,12) to a temperature above 1 100 QC; and allowing a melted metal layer (210) of the first metal component (11) to solidify, such that a joint (25) is obtained at the contact point (16). The melting depressant composition and related products are also described.

Abstract translation: 一种用于将第一金属部件（11）与第二金属部件（12）接合的方法，所述金属部件（11,12）的固相线温度高于1100C.C。 所述方法包括：在所述第一金属部件（11）的表面（15）上施加熔融抑制剂组合物（14），所述熔融抑制剂组合物（14）包含熔融抑制剂组分，所述熔融抑制剂组分包含至少25wt％硼和硅 降低第一金属部件（11）的熔化温度; 在所述表面（15）上的接触点（16）处使所述第二金属部件（12）与所述熔化抑制剂组合物（14）接触（202）; 将第一和第二金属部件（11,12）加热至1100℃以上的温度; 并允许第一金属部件（11）的熔化金属层（210）固化，从而在接触点（16）获得接头（25）。 还描述了熔融抑制剂组合物和相关产品。

公开(公告)号：EP2830818A1

公开(公告)日：2015-02-04

申请号：EP13712300.6

申请日：2013-03-27

Applicant: Alfa Laval Corporate AB

Inventor： SJÖDIN, Per ,  WALTER, Kristian

IPC: B23K35/00 ,  B23K35/02 ,  B23K35/365 ,  C22C19/00

CPC classification number: B23K1/20 ,  B21D53/04 ,  B22F1/0059 ,  B23K1/00 ,  B23K1/0008 ,  B23K1/0012 ,  B23K1/203 ,  B23K20/002 ,  B23K20/24 ,  B23K35/00 ,  B23K35/001 ,  B23K35/004 ,  B23K35/007 ,  B23K35/02 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/24 ,  B23K35/30 ,  B23K35/34 ,  B23K35/36 ,  B23K35/3613 ,  B23K35/362 ,  B23K35/365 ,  B23K2101/00 ,  B32B15/01 ,  C22C1/02 ,  C22C19/00 ,  C23C24/10 ,  C23C30/00 ,  C23C30/005 ,  F28D9/0012 ,  F28D9/0062 ,  F28F3/042 ,  F28F21/083 ,  F28F21/089 ,  Y10T29/49366 ,  Y10T403/479 ,  Y10T428/12778 ,  Y10T428/12986 ,  Y10T428/25 ,  Y10T428/259 ,  Y10T428/266 ,  Y10T428/273 ,  Y10T428/2924 ,  Y10T428/2982

Abstract: The present invention relates to an intermediate product for joining and coating by brazing comprising a base metal and a blend of boron and silicon, said base metal having a solidus temperature above 1040 °C, and the intermediate product has at least partly a surface layer of the blend on the base metal, wherein the boron in the blend is selected from a boron source, and the silicon in the blend is selected from a silicon source, and wherein the blend comprises boron and silicon in a ratio of boron to silicon within a range from about 3:100 wt/wt to about 100:3 wt/wt. The present invention relates also to a stacked intermediate product, to an assembled intermediate product, to a method of brazing, to a brazed product, to a use of an intermediate product, to a pre-brazed product, to a blend and to paint.

Abstract translation: 本发明涉及一种制造永久连接板式热交换器（1）的方法，该热交换器包括多个固相线温度高于1100℃的金属热交换器板（2），该金属热交换器板彼此并排设置并形成板组件（3），该板组件 用于第一介质的第一板间隙（4）和用于第二介质的第二板间隙（5），其中第一板间隙（4,5）以交替顺序设置在板组件（3）中，其中每个热量 （2）包括传热区域（10）和边缘区域（11），所述边缘区域包括围绕所述传热区域（10）延伸的弯曲边缘（15），其中所述板（2）的第一表面（16） 形成凸形并且板的第二表面（17）形成凹形，其中传热区域（10）包括隆起（18）和凹陷（19）的波纹，其中板的波纹和弯曲边缘 （15）通过压板提供。 本发明还涉及通过该方法生产的板式换热器（1）。