公开(公告)号：EP2050515A4

公开(公告)日：2012-01-18

申请号：EP07767769

申请日：2007-06-28

申请人： NITTO DENKO CORP

发明人： SUGO YUKI ,  TERADA YOSHIO ,  UENDA DAISUKE ,  NAMIKAWA MAKOTO ,  YOSHIDA YOSHINORI ,  MAENO YOUHEI

IPC分类号： B08B1/00 ,  H01L21/304

CPC分类号： H01L21/67046 ,  B08B1/00 ,  B08B7/0028 ,  C23C16/4407

公开(公告)号：EP1514615A4

公开(公告)日：2005-10-19

申请号：EP02743650

申请日：2002-06-19

申请人： NITTO DENKO CORP

发明人： NAMIKAWA MAKOTO ,  TERADA YOSHIO ,  NUKAGA JIROU

IPC分类号： B08B1/00 ,  C09J7/02 ,  C09J201/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  H01L21/677 ,  H01L21/68

CPC分类号： H01L21/6835 ,  B08B1/00 ,  H01L21/67028

摘要： A cleaning sheet for foreign-substance-disliking substrate processors such as apparatuses for manufacturing and inspecting semiconductors, flat panel displays, and print substrates, a cleaning-functional carrier member, and a cleaning method. The cleaning sheet is provided with a porous layer as the cleaning layer or an adhesive layer on one face of a sheetlike material provided with a porous layer.

公开(公告)号：EP1206166A4

公开(公告)日：2010-01-13

申请号：EP00940870

申请日：2000-06-28

申请人： NITTO DENKO CORP

发明人： NAMIKAWA MAKOTO ,  IOKA HARUO ,  TOYODA EIJI

IPC分类号： H01L27/32 ,  H01L51/40 ,  H01L51/50 ,  H01L51/52 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  H05B33/22

CPC分类号： H05B33/10 ,  H01L27/3283 ,  H01L51/0002 ,  H01L51/001 ,  H01L51/0014 ,  H01L51/0016 ,  H01L51/5237 ,  Y10T156/1158

公开(公告)号：EP0989465A4

公开(公告)日：2000-03-29

申请号：EP98901544

申请日：1998-02-06

申请人： NITTO DENKO CORP

发明人： TOYODA EIJI ,  NAMIKAWA MAKOTO ,  HASHIMOTO KOUICHI ,  SHIRAI SELICHIRO

IPC分类号： C09J7/02 ,  C09J5/00 ,  G03F7/34 ,  H01L21/02 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  G03F7/42

CPC分类号： H01L21/02071 ,  G03F7/34 ,  H01L21/027 ,  Y10T156/11

摘要： By removing a resist member together with a sidewall protection layer which have become unnecessary after dry etching by a sidewall protection process, simplification of a manufacturing process for a semiconductor or the like is to be realized. In carrying out dry etching by a sidewall protection process using a resist pattern (3) existing on a semiconductor substrate (2) as a mask, and then removing the resist member (3) and a sidewall protection layer (4) deposited on a pattern sidewall (22) which have become unnecessary, adhesive sheets (1) are bonded onto the substrate (2), and an adhesive agent (11) is adhered up to the part of the pattern sidewall (22) by heating and pressurizing. After that, the adhesive sheet (1), the resist member (3) and the sidewall protection layer (4) are peeled off and removed together.

摘要翻译： 通过除去通过侧壁保护工艺的干蚀刻之后已经变得不必要的抗蚀剂部件以及侧壁保护层，可以实现用于半导体等的制造工艺的简化。 在通过使用半导体基板（2）上存在的抗蚀剂图案（3）作为掩模的侧壁保护工艺进行干法蚀刻，然后去除沉积在图案上的抗蚀剂构件（3）和侧壁保护层（4） （2）上粘合粘合片（1），并通过加热和加压将粘合剂（11）粘合到图案侧壁（22）的一部分上。 之后，将粘合片（1），抗蚀剂构件（3）和侧壁保护层（4）一起剥离并去除。