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19 条记录 (耗时 0.013 秒)

    RESONATOR
    2.
    发明公开
    RESONATOR 有权
    谐振器

    公开(公告)号：EP2082481A2

    公开(公告)日：2009-07-29

    申请号：EP07826663.2

    申请日：2007-10-05

    申请人： NXP B.V.

    发明人： NGUYEN HOANG, Viet ,  GRAVESTEIJN, Dirk ,  SURDEANU, Radu

    IPC分类号： H03H3/007 ,  H03H9/24

    CPC分类号： H03H9/2405 ,  H03H3/0072 ,  H03H2009/02496

    摘要： A method of making a resonator, preferably a nano-resonator, includes starting with a FINFET structure with a central bar, first and second electrodes connected to the central bar, and third and fourth electrodes on either side of the central bar and separated from the central bar by gate dielectric. The structure is formed on a buried oxide layer. The gate dielectric and buried oxide layer are then selectively etched away to provide a nano-resonator structure with a resonator element 30, a pair of resonator electrodes (32,34), a control electrode (36) and a sensing electrode (38).

    MEASURING APPARATUS
    4.
    发明公开
    MEASURING APPARATUS 审中-公开
    测量装置

    公开(公告)号：EP2307851A1

    公开(公告)日：2011-04-13

    申请号：EP09773006.3

    申请日：2009-07-01

    申请人： NXP B.V.

    发明人： BATAILLOU, Benoit ,  BANCKEN, Pascal ,  NGUYEN HOANG, Viet ,  SURDEANU, Radu ,  VAN STEENWINCKEL, David

    IPC分类号： G01B9/02 ,  G01N21/45 ,  G01N15/14

    CPC分类号： C09K11/06 ,  G01N15/1459 ,  G01N21/45 ,  G01N2021/458

    摘要： An apparatus comprising at least one measuring cell (10) is disclosed. The measuring cell comprisesa first cavity (16 and a second cavity (18) perpendicular to the first cavity, the first cavity and the second cavity comprising an overlap at first respective ends and a reflective surface (20) at the opposite respective ends. A beam splitter (15) is located in the overlap and an electromagnetic radiation source (12) is arranged to project a beam of electromagnetic radiation onto the beam splitter (15) such that the beam is projected into each ofthe cavities. A phase detector (22) for detecting a phase difference between the respective electromagnetic radiation reflected by the first and second cavity (16; 18) is also provided. In addition, the apparatus has a fluid channel (26), at least a part of which runs parallel to the first cavity (16) such that the electromagnetic radiation projected into thefirst cavity extends into said part ofthe fluid channel. This allows for the interferometric detection of particles in the fluid channel.

    DISPLAY DEVICE
    6.
    发明公开
    DISPLAY DEVICE 有权
    ANZEIGEVORRICHTUNG

    公开(公告)号：EP2313810A1

    公开(公告)日：2011-04-27

    申请号：EP09786723.8

    申请日：2009-07-27

    申请人： NXP B.V.

    发明人： BATAILLOU, Benoit ,  SURDEANU, Radu ,  BANCKEN, Pascal ,  STEENWINCKEL, David, van ,  NGUYEN HOANG, Viet

    IPC分类号： G02F1/23 ,  G02F1/19

    CPC分类号： G02F1/19 ,  G02F1/0147 ,  G02F1/23 ,  G02F2203/10 ,  G09G2300/00

    摘要： A display device comprises a substrate which carries an array of pixels. Each pixel comprises an array of apertures in the substrate, each aperture of the array having a maximum opening dimension less than the wavelength of the light to be transmitted through the aperture. The effective dielectric constant of the aperture and/or the dielectric constant of the substrate is varied, thereby to vary the light transmission characteristics of the pixel between transmission of at least one frequency in the visible spectrum and transmission of substantially no frequency in the visible spectrum.

    摘要翻译： 显示装置包括承载像素阵列的基板。 每个像素包括衬底中的孔阵列，阵列的每个孔具有小于要透过孔的光的波长的最大开口尺寸。 改变孔的有效介电常数和/或介电常数，从而改变可见光谱中的至少一个频率的透射之间像素的透光特性以及可见光谱中基本上没有频率的透射 。

    METHOD OF MANUFACTURING OPENINGS IN A SUBSTRATE, IN PARTICULAR OF VIAS THROUGH THE SUBSTRATE
    7.
    发明授权
    METHOD OF MANUFACTURING OPENINGS IN A SUBSTRATE, IN PARTICULAR OF VIAS THROUGH THE SUBSTRATE 有权
    用于生产孔基材，尤其是通孔通过基底

    公开(公告)号：EP2095416B1

    公开(公告)日：2011-03-16

    申请号：EP07849394.7

    申请日：2007-12-10

    申请人： NXP B.V.

    发明人： NGUYEN HOANG, Viet ,  BENNEBROEK, Martinus T.

    IPC分类号： H01L21/768 ,  H01L21/3065 ,  H01L23/48

    CPC分类号： H01L21/76898 ,  H01L21/3083 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

    摘要： The invention relates to a method of manufacturing openings in a substrate (5), the method comprising steps of: providing the substrate (5) with a masking layer (40) on a surface thereof; forming a first opening (10), a second opening (30), and a channel (20) in between the first opening (10) and the second opening (30) in the masking layer (40), the channel (20) connecting the first opening (10) with the second opening (30), the second opening (30) having an area (A2) that is larger than the area (Al) of the first opening (10); forming trenches (11, 21, 31) in the substrate (5) located at the first opening (10), the second opening (30), and at the channel (20) under masking of the masking layer (40) by means of anisotropic dry etching, and sealing off the trench (21) located at the channel (20) for forming the openings in the substrate (5). The method of the invention enables formation of a deeper first opening (10) than what is possible with the known methods. The invention further relates to a method of manufacturing a via in a substrate (5), which may be advantageously used in 3-dimensional integrated circuits.

    INTEGRATED CIRCUIT MANUFACTURING METHOD
    8.
    发明公开
    INTEGRATED CIRCUIT MANUFACTURING METHOD 有权
    方法制造集成电路

    公开(公告)号：EP2269223A1

    公开(公告)日：2011-01-05

    申请号：EP09731934.7

    申请日：2009-04-14

    申请人： NXP B.V.

    发明人： NGUYEN HOANG, Viet ,  SURDEANU, Radu ,  BATAILLOU, Benoit

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14685 ,  H01L21/31053 ,  H01L21/31111 ,  H01L27/14621 ,  H01L27/14629

    摘要： A method of providing a dielectric material (18) having regions (18', 18") with a varying thickness in an IC manufacturing process is disclosed. The method comprises forming a plurality of patterns in respective regions (20', 20") of the dielectric material (18), each pattern increasing the susceptibility of the dielectric material (18) to a dielectric material removal step by a predefined amount and exposing the dielectric material (18) to the dielectric material removal step. In an embodiment, the IC comprises a plurality of pixilated elements (12) and a plurality of light interference elements (24), each comprising a first mirror element (16) and a second mirror element (22), a region of the dielectric material (18) separating the first mirror element (16) and the second element (22), and each being arranged over one of said pixilated elements (12), the method further comprising forming the respective first mirror elements (16) in a dielectric layer (14) over a substrate (10) comprising the plurality of pixilated elements; depositing the dielectric material over the dielectric layer; and forming the respective second mirror elements such that each second mirror element is separated from a respective first mirror element by a region of the exposed dielectric material. Hence, an IC having a layer of a dielectric material (18) comprising regions of different thicknesses can be obtained requiring only a few process steps.

    MANUFACTURING METHOD AND INTEGRATED CIRCUIT HAVING A LIGHT PATH TO A PIXILATED ELEMENT
    9.
    发明公开
    MANUFACTURING METHOD AND INTEGRATED CIRCUIT HAVING A LIGHT PATH TO A PIXILATED ELEMENT 审中-公开
    方法与集成电路WITH A LICHTWEG到像素化元

    公开(公告)号：EP2257981A2

    公开(公告)日：2010-12-08

    申请号：EP09719512.7

    申请日：2009-03-09

    申请人： NXP B.V.

    发明人： NGUYEN HOANG, Viet ,  SURDEANU, Radu ,  BATAILLOU, Benoit

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14625 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14685

    摘要： The present invention relates to a manufacturing method of an integrated circuit (IC) comprising a substrate (10) comprising a pixelated element (12) and a light path (38) to the pixelated element (12). The IC comprises a first dielectric layer (14) covering the substrate (10) but not the pixilated element (12), a first metal layer (16) covering a part of the first dielectric layer (14), a second dielectric layer (18) covering a further part of first dielectric layer (14), a second metal layer (20) covering a part of the second dielectric layer (18) and extending over the pixelated element (12) and a part of the first metal layer (16), the first metal layer (16) and the second metal layer (20) forming an air-filled light path (38) to the pixelated element (12). The air-filled light path (38) is formed by creation of holes in the first dielectric layer (14) and the second dielectric layer (18), filling the holes with sacrificial materials, and removal of the sacrificial materials after deposition and patterning of the second metal layer (20). This yields an IC having a low-loss light path to the pixelated element (12). The light path may act as a color filter, e.g. a Fabry-Perot color filter.