Abstract:
A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.
Abstract:
The present invention relates to a population of semiconductor nanoplatelets, each member of the population comprising a nanoplatelet core including a first semiconductor material and a shell including a second semiconductor material on the surface of the nanoplatelet core, wherein the population exhibits fluorescence quantum efficiency at 100 °C or above that is at least 80% of the fluorescence quantum efficiency of the population at 20°C. The present invention also relates to a nanoplatelets film comprising said population of nanoplatelets, a backlight unit comprising said nanoplatelets film and a liquid crystal display comprising said backlight unit.
Abstract:
The present invention relates to a population of semiconductor nanoplatelets, each member of the population comprising a nanoplatelet core including a first semiconductor material and a shell including a second semiconductor material on the surface of the nanoplatelet core, wherein the population exhibits fluorescence quantum efficiency at 100 °C or above that is at least 80% of the fluorescence quantum efficiency of the population at 20°C. The present invention also relates to a nanoplatelets film comprising said population of nanoplatelets, a backlight unit comprising said nanoplatelets film and a liquid crystal display comprising said backlight unit.
Abstract:
Methods for treating a semiconductor material, and for making devices containing a semiconducting material, are presented. One embodiment is a method for treating a semiconductor material that includes a chalcogenide. The method comprises contacting at least a portion of the semiconductor material with a chemical agent. The chemical agent comprises a solvent, and an iodophor dissolved in the solvent.
Abstract:
Methods of making a photovoltaic (PV) cell are disclosed. The methods comprise at least the steps of, providing a first component (300) comprising a cadmium telluride (CdTe) layer comprising an interfacial region (304), and subjecting the first component to a functionalizing treatment in the presence of a material comprising copper.
Abstract:
Methods of making a photovoltaic (PV) cell are disclosed. The methods comprise at least the steps of, providing a first component (300) comprising a cadmium telluride (CdTe) layer comprising an interfacial region (304), and subjecting the first component to a functionalizing treatment in the presence of a material comprising copper.