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    Wavelength variable semiconductor laser element, apparatus and method for controlling the same
    2.
    发明公开
    Wavelength variable semiconductor laser element, apparatus and method for controlling the same 有权
    波长可变半导体激光器元件，设备，和控制的方法

    公开(公告)号：EP2348588A3

    公开(公告)日：2012-02-22

    申请号：EP11163427.5

    申请日：2008-03-07

    申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

    发明人： Fujiwara, Naoki ,  Ishii, Hiroyuki ,  Oohashi, Hiromi ,  Okamoto, Hiroshi

    IPC分类号： H01S5/062 ,  H01S5/125 ,  H01S5/024 ,  H01S5/0625 ,  H01S5/22 ,  B82Y20/00

    CPC分类号： H01S5/06256 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/024 ,  H01S5/02407 ,  H01S5/02461 ,  H01S5/0268 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/0617 ,  H01S5/06808 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/34306 ,  H01S5/4087 ,  H01S2301/173

    摘要： A wavelength tunable semiconductor laser device which comprises an active region (43) for oscillating a laser beam, a plurality of wavelength tuning regions (46,47,49) each for shifting a wavelength of the laser beam, a plurality of thermal compensation regions wherein a thermal compensation region corresponding to each of the plurality of wavelength tuning regions (46,47,49) is provided adjacent to the respective wavelength tuning region, and wherein the thermal compensation region is configured to receive an input of electric power and to convert most of the inputted electric power to heat. Further, a controller (21) configured to always keep constant the sum of the electric power inputted into the compensation region and an electric power inputted into the wavelength tuning region is provided, wherein the thermal compensation regions are composed of a non-active waveguide having a first single mesa structure (52), wherein the non-active waveguide is configured to convert most of the inputted electric power to heat by an electric current injected into the non-active waveguide or a voltage applied thereto, wherein the active region (43) and the plurality of wavelength tuning regions (46,47,49) are composed of a waveguide having a second single mesa structure (51) other than the first single mesa structure (52), and wherein the distance between the first single mesa structure (52) and the second single mesa structure (51) is equal to or more than 3µm and equal to or less than the thickness of a substrate (41) of the wavelength tunable semiconductor laser device.

    Wavelenght variable semiconductor laser element, apparatus and method for controlling the same
    7.
    发明公开
    Wavelenght variable semiconductor laser element, apparatus and method for controlling the same 有权
    波长可变半导体激光器元件，和设备及其控制方法

    公开(公告)号：EP2242153A1

    公开(公告)日：2010-10-20

    申请号：EP10167736.7

    申请日：2008-03-07

    申请人： Nippon Telegraph And Telephone Corporation

    发明人： Fujiwara, Naoki ,  Ishii, Hiroyuki ,  Oohashi, Hiromi ,  Okamoto, Hiroshi

    IPC分类号： H01S5/062 ,  H01S5/125

    CPC分类号： H01S5/06256 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/024 ,  H01S5/02407 ,  H01S5/02461 ,  H01S5/0268 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/0617 ,  H01S5/06808 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/34306 ,  H01S5/4087 ,  H01S2301/173

    摘要： A control method for a wavelength tunable semiconductor laser device including an active region (2,11a) for oscillating a laser beam, a wavelength tuning region (4,11b) for shifting a wavelength of the laser beam, and a thermal compensation region (4,11c) adjacent to the wavelength tuning region (4,11b) for converting most of the inputted electric power to heat, when a laser beam is oscillated from the wavelength tunable semiconductor laser device, comprising measuring an electric current-voltage characteristic of each of the wavelength tuning region and the thermal compensation region, finding an electric current-electric power characteristic of each of the wavelength tuning region and the thermal compensation region from the electric current-voltage characteristics is disclosed. Further, on the basis of the electric current-voltage characteristics and the electric current-electric power characteristics, determining and controlling an electric current or voltage applied to each of the wavelength tuning region (4,11b) and the thermal compensation region (4,11c) so that the sum of an electric power inputted into the wavelength tuning region and an electric power inputted into the thermal compensation region is always kept constant.

    摘要翻译： 为用于移动所述激光束的波长振荡的激光束，一个波长可调区域（4,11b），用于波长可调半导体激光元件包括控制方法（有源区域（2,11a），以及一个热补偿区域4 ，11C）邻近用于转换最输入电功率来加热，当激光束从波长可调半导体激光元件振荡，测量每一个的电流 - 电压特性的包含所述波长可调区域（4,11b） 所述波长可调区域和所述热补偿区域，找到每个从电流 - 电压特性的波长可调区域和所述热补偿区域的电流 - 功率特性的光盘被游离缺失。 进一步的电流 - 电压特性和电流 - 电功率特性，确定开采的基础上，并施加到每个所述波长可调区域（4,11b）和所述热补偿区域的电流或电压（4控制， 11C）所以没有输入到所述波长可调区域和输入到所述热补偿区域电功率的电功率之和始终保持恒定。