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    Wavelength variable semiconductor laser element, apparatus and method for controlling the same
    2.
    发明公开
    Wavelength variable semiconductor laser element, apparatus and method for controlling the same 有权
    波长可变半导体激光器元件，设备，和控制的方法

    公开(公告)号：EP2348588A3

    公开(公告)日：2012-02-22

    申请号：EP11163427.5

    申请日：2008-03-07

    申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

    发明人： Fujiwara, Naoki ,  Ishii, Hiroyuki ,  Oohashi, Hiromi ,  Okamoto, Hiroshi

    IPC分类号： H01S5/062 ,  H01S5/125 ,  H01S5/024 ,  H01S5/0625 ,  H01S5/22 ,  B82Y20/00

    CPC分类号： H01S5/06256 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/024 ,  H01S5/02407 ,  H01S5/02461 ,  H01S5/0268 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/0617 ,  H01S5/06808 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/34306 ,  H01S5/4087 ,  H01S2301/173

    摘要： A wavelength tunable semiconductor laser device which comprises an active region (43) for oscillating a laser beam, a plurality of wavelength tuning regions (46,47,49) each for shifting a wavelength of the laser beam, a plurality of thermal compensation regions wherein a thermal compensation region corresponding to each of the plurality of wavelength tuning regions (46,47,49) is provided adjacent to the respective wavelength tuning region, and wherein the thermal compensation region is configured to receive an input of electric power and to convert most of the inputted electric power to heat. Further, a controller (21) configured to always keep constant the sum of the electric power inputted into the compensation region and an electric power inputted into the wavelength tuning region is provided, wherein the thermal compensation regions are composed of a non-active waveguide having a first single mesa structure (52), wherein the non-active waveguide is configured to convert most of the inputted electric power to heat by an electric current injected into the non-active waveguide or a voltage applied thereto, wherein the active region (43) and the plurality of wavelength tuning regions (46,47,49) are composed of a waveguide having a second single mesa structure (51) other than the first single mesa structure (52), and wherein the distance between the first single mesa structure (52) and the second single mesa structure (51) is equal to or more than 3µm and equal to or less than the thickness of a substrate (41) of the wavelength tunable semiconductor laser device.

    Distributed reflector and wavelength-tunable semiconductor laser
    3.
    发明公开
    Distributed reflector and wavelength-tunable semiconductor laser 失效
    Verteiler Reflektor und Halbleiterlaser mit abstimmbarerWellenlänge

    公开(公告)号：EP0847116A2

    公开(公告)日：1998-06-10

    申请号：EP98102645.3

    申请日：1993-03-04

    申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

    发明人： Tohmori, Yuichi ,  Yoshikuni, Yuzo ,  Ishii, Hiroyuki ,  Kano, Fumiyoshi ,  Tamamura, Toshiaki

    IPC分类号： H01S3/085 ,  H01S3/103 ,  G02B6/12

    CPC分类号： H01S5/12 ,  G02B6/124 ,  G02B2006/12107 ,  G02B2006/12121 ,  H01S5/0425 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1218 ,  H01S5/1225

    摘要： A semiconductor laser comprises first and second distributed Bragg reflector diffraction gratings (10a,10b) being intervened by an active region having no diffraction grating; said first and second diffraction gratings (10a,10b) each have a plurality of repeating unit regions repeated at respective periods, thus forming respective modulation periods (Mf,Mr); in each of the repeating unit regions the length of the single period varies in the direction in which light transmits, continuously or at intervals, thereby varying the optical reflectivity of the diffraction gratings (10a,10b) depending on its position in each of its said repeating unit regions; said first and second diffraction gratings reflect light having wavelengths (λ 1 ,λ 2 ,.. and λ' 1 ,λ 2 ,...) slightly differing from each other; and said diffraction grating extends by at least two modulation periods. The application of voltages on said diffraction gratings enables coarse and fine tuning of lasing the wavelength.

    摘要翻译： 半导体激光器包括由没有衍射光栅的有源区插入的第一和第二分布布拉格反射器衍射光栅（10a，10b）; 所述第一和第二衍射光栅（10a，10b）各自具有在各个周期重复的多个重复单位区域，从而形成相应的调制周期（Mf，Mr）; 在每个重复单元区域中，单个周期的长度在光线连续或间隔的方向上变化，从而根据其衍射光栅（10a，10b）的每个中的位置来改变衍射光栅（10a，10b）的光学反射率 重复单位区域; 所述第一和第二衍射光栅反射具有彼此稍微不同的波长（λ1，λ2，...和λ'1，λ2，...）的光; 并且所述衍射光栅延伸至少两个调制周期。 在所述衍射光栅上施加电压使得能够粗调和微调激光的波长。

    Wavelenght variable semiconductor laser element, apparatus and method for controlling the same
    4.
    发明公开
    Wavelenght variable semiconductor laser element, apparatus and method for controlling the same 有权
    波长可变半导体激光器元件，和设备及其控制方法

    公开(公告)号：EP2242153A1

    公开(公告)日：2010-10-20

    申请号：EP10167736.7

    申请日：2008-03-07

    申请人： Nippon Telegraph And Telephone Corporation

    发明人： Fujiwara, Naoki ,  Ishii, Hiroyuki ,  Oohashi, Hiromi ,  Okamoto, Hiroshi

    IPC分类号： H01S5/062 ,  H01S5/125

    CPC分类号： H01S5/06256 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/024 ,  H01S5/02407 ,  H01S5/02461 ,  H01S5/0268 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/0617 ,  H01S5/06808 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/34306 ,  H01S5/4087 ,  H01S2301/173

    摘要： A control method for a wavelength tunable semiconductor laser device including an active region (2,11a) for oscillating a laser beam, a wavelength tuning region (4,11b) for shifting a wavelength of the laser beam, and a thermal compensation region (4,11c) adjacent to the wavelength tuning region (4,11b) for converting most of the inputted electric power to heat, when a laser beam is oscillated from the wavelength tunable semiconductor laser device, comprising measuring an electric current-voltage characteristic of each of the wavelength tuning region and the thermal compensation region, finding an electric current-electric power characteristic of each of the wavelength tuning region and the thermal compensation region from the electric current-voltage characteristics is disclosed. Further, on the basis of the electric current-voltage characteristics and the electric current-electric power characteristics, determining and controlling an electric current or voltage applied to each of the wavelength tuning region (4,11b) and the thermal compensation region (4,11c) so that the sum of an electric power inputted into the wavelength tuning region and an electric power inputted into the thermal compensation region is always kept constant.

    摘要翻译： 为用于移动所述激光束的波长振荡的激光束，一个波长可调区域（4,11b），用于波长可调半导体激光元件包括控制方法（有源区域（2,11a），以及一个热补偿区域4 ，11C）邻近用于转换最输入电功率来加热，当激光束从波长可调半导体激光元件振荡，测量每一个的电流 - 电压特性的包含所述波长可调区域（4,11b） 所述波长可调区域和所述热补偿区域，找到每个从电流 - 电压特性的波长可调区域和所述热补偿区域的电流 - 功率特性的光盘被游离缺失。 进一步的电流 - 电压特性和电流 - 电功率特性，确定开采的基础上，并施加到每个所述波长可调区域（4,11b）和所述热补偿区域的电流或电压（4控制， 11C）所以没有输入到所述波长可调区域和输入到所述热补偿区域电功率的电功率之和始终保持恒定。

    Distributed reflector and wavelength-tunable semiconductor laser
    8.
    发明公开
    Distributed reflector and wavelength-tunable semiconductor laser 失效
    Verteilter Reflektor und Halbleiterlaser mit abstimmbarerWellenlänge。

    公开(公告)号：EP0559192A2

    公开(公告)日：1993-09-08

    申请号：EP93103480.5

    申请日：1993-03-04

    申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

    发明人： Tohmori, Yuichi ,  Yoshikuni, Yuzo ,  Ishii, Hiroyuki ,  Tamamura, Toshiaki ,  Kano, Fumiyoshi

    IPC分类号： H01S3/085 ,  H01S3/03 ,  G02B5/18 ,  H01S3/103

    CPC分类号： H01S5/12 ,  G02B6/124 ,  G02B2006/12107 ,  G02B2006/12121 ,  H01S5/0425 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1218 ,  H01S5/1225

    摘要： The distributed reflector includes a substrate (1) and at least one optical waveguide formed on the substrate and having a refractive index larger than the substrate and at least one optical confinement layer (3) having a refractive index smaller than the optical waveguide layer. A diffractive grating (10a or 10b) is formed in at least one layer (2 or 3) constituting the optical waveguide. The diffractive grating has a structure of which at least one parameter defining optical reflectivity varies depending on its position, and is formed continuously for at least two periods, the period being approximately defined by the length of repeating unit region. The parameter may be pitch, coupling coefficient, bandgap composition, phase shift, etc. The semiconductor laser includes the distributed reflector which may be of a distributed reflector type or distributed feed back type and has distributed reflector regions (102, 103) and a phase adjustment region (104). The laser also has a cladding layer (4), a cap layer (5), current block layers (6, 7), electrodes (8, 9), connection portions (11), and grooves (30). Application of current or voltage to the refractive index of the active region (101) or inactive region (102, 103, 104) in which a diffractive grating is present or absent adjusts the refractive index thereof and enables coarse and fine adjustment of lasing wavelength. Comb-shaped electrodes may be used.

    摘要翻译： 分布式反射器包括基板（1）和形成在基板上并具有大于基板的折射率的至少一个光波导和至少一个折射率小于光波导层的光限制层（3）。 衍射光栅（10a或10b）形成在构成光波导的至少一个层（2或3）中。 衍射光栅具有这样的结构，其中限定光反射率的至少一个参数根据其位置而变化，并且连续形成至少两个周期，该周期近似由重复单位区域的长度限定。 该参数可以是间距，耦合系数，带隙组成，相移等。半导体激光器包括分布式反射器，其可以是分布式反射器类型或分布式反馈型，并且具有分布式反射器区域（102,103）和相位 调整区域（104）。 激光器还具有包覆层（4），盖层（5），电流阻挡层（6,7），电极（8,9），连接部分（11）和凹槽（30）。 施加电流或电压对其中存在或不存在衍射光栅的有源区（101）或非活性区（102,103,104）的折射率调节其折射率，并且可以粗调和微调激光波长。 可以使用梳状电极。