Abstract:
In a conventional soldering method, an FPC-side electrode pad and a package-side electrode pad are closely joined together with a solder layer, and the soldered state after a joining process has not been easily confirmed visually. Since a conduction inspection on wirings by measuring resistance values, for example, for an electric path including a joint portion needs to be made, quite a long time has been required for the inspection. The present invention provides a solder joint structure including a side face electrode which is formed on each of the side faces of the end parts of an FPC board and a package or PCB board that are to be soldered, extending vertically relative to the faces constituting each of electrode pads on the boards , and which introduces solder. On the side face electrodes of the board end parts, a part of solder that is formed continuously from the solder joint portion is visible and the state of the solder joint between the electrode pads on the two boards can be confirmed. The efficiency of solder joint tests can be improved by providing an electrode pad configuration which allows to form solder joint portions that are sufficiently visible from the side faces of the boards.
Abstract:
Polarization rotators of conventional techniques require forming a silicon nitride layer, which is not employed in usual fabrication of a silicon waveguide circuit. In order to employ a polarization rotator function in an optical integrated circuit, a process of forming a silicon nitride layer is added just for that purpose. This increases the fabrication time and complicates the fabrication equipment. In a polarization rotator of the present invention, the waveguide width of a center core portion of a polarization converter (104) is made small. Thus, the intensity of an optical wave does not concentrate only at the center core portion and is more influenced by structural asymmetry. With the configuration of the polarization rotator of the present invention, it is possible to efficiently cause polarization conversion with a structure including only a silicon waveguide and no silicon nitride layer or the like formed thereon.
Abstract:
The present invention provides an optical module that suppresses crosstalk between high-frequency transmission lines. The optical module of the present invention includes at least one set of: an optical port; an optical processing circuit optically connected to the optical port; an electro-optical transducer optically connected to the optical processing circuit; two or more high-frequency transmission lines connected to the electro-optical transducer; and electrical ports connected to the high-frequency transmission lines, and includes a conductive cover block which is provided above the high-frequency transmission lines so as to at least partly cover the high-frequency transmission lines and which is grounded.
Abstract:
A coherent optical mixer circuit is provided that can measure a phase error without requiring a step of cutting away a delay circuit. Odd-numbered or even-numbered two of four inputs of an 4-input-and-4-output multimode interference circuit are connected to an input mechanism. The four outputs of the multimode interference circuit are all connected to an output mechanism to the exterior. Other two inputs of the multimode interference circuit are connected to two monitor waveguides. One of the monitor waveguide is longer than the other to configure a light delay circuit. The monitor waveguides constituting the light delay circuit are connected to the respective outputs of a 2-branched light splitter. The 2-branched light splitter has an input connected to a monitor light input mechanism from the exterior via a monitor input waveguide.
Abstract:
The present invention provides a germanium photodetector which reduces a dark current without degradation of a photocurrent. The germanium photodetector includes: a silicon substrate; a lower clad layer formed on the silicon substrate; a core layer (210) formed on the lower clad layer; a p-type silicon slab (211) formed in a part of the core layer (210) and doped with a p-type impurity ion; p++ silicon electrode sections (212, 213) that are highly-doped with a p-type impurity and act as an electrode; and germanium layers (241, 242) which absorb light. The germanium photodetector further includes an upper clad layer, an n-type germanium region doped with an n-type impurity above the germanium layer, and an electrode. According to the present invention, two germanium layers (241, 242) are provided on the p-type silicon slab (211) so as to miniaturize the area of the surface of the individual germanium layer in contact with the p-type silicon slab (211), so that the dark current due to threading dislocation can be reduced.
Abstract:
A one chip-integrated digital coherent polarization multiplexing optical transmission and reception circuit with optimal optical power distribution between sending and receiving is provided by using an optical power splitter having a branching ratio of a lower asymmetry property so that the unbalanced loss depending on the polarization path can be compensated. A polarization multiplexing optical transmission and reception circuit includes a polarization multiplexing optical transmission circuit, including: the first optical power splitter for branching the optical power of continuous light outputted from a light source; one polarization optical modulation circuit at the side of a path having a higher loss connected to one output of the first optical power splitter; the second optical power splitter connected to the other output of the first optical power splitter; and the other polarization optical modulation circuit connected to one output of the second optical power splitter.