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    USE OF AT LEAST ONE BINARY GROUP 15 ELEMENT COMPOUND, A 13/15 SEMICONDUCTOR LAYER AND BINARY GROUP 15 ELEMENT COMPOUNDS.
    2.
    发明公开
    USE OF AT LEAST ONE BINARY GROUP 15 ELEMENT COMPOUND, A 13/15 SEMICONDUCTOR LAYER AND BINARY GROUP 15 ELEMENT COMPOUNDS. 审中-公开
    使用至少一个二元组15元素化合物，13/15个半导体层和二元组15元素化合物。

    公开(公告)号：EP3198053A1

    公开(公告)日：2017-08-02

    申请号：EP15781035.9

    申请日：2015-09-25

    申请人： Philipps Universität Marburg

    发明人： VON HAENISCH, Carsten ,  VOLZ, Kerstin ,  STOLZ, Wolfgang ,  STERZER, Eduard ,  BEYER, Andreas ,  KEIPER, Dominik ,  RINGLER, Benjamin

    IPC分类号： C23C16/30 ,  C07F9/46 ,  C07F9/50 ,  C07F9/72 ,  C07F9/90

    CPC分类号： H01L21/02538 ,  C07F9/46 ,  C07F9/504 ,  C07F9/72 ,  C07F9/904 ,  C23C16/22 ,  C23C16/301 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262

    摘要： The invention provides the use of at least one binary group 15 element compound of the general formula R1R2E-E′R3R4 (I) or R5E(E′R6R7)2 (II) as the educt in a vapor deposition process. In this case, R1, R2, R3 and R4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E′ are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminations—compared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.

    摘要翻译： 本发明提供了至少一种通式R 1 R 2 E-E'R 3 R 4（I）或R 5 E（E'R 6 R 7）2（II）的二元15族元素化合物作为气相沉积工艺中的离析物的用途。 在这种情况下，R1，R2，R3和R4独立地选自由H，烷基（C1-C10）和芳基组成的组，并且E和E'独立地选自N，P ，As，Sb和Bi。 该用途不包括肼及其衍生物。 根据本发明的二元族15元素化合物允许在相对较低的处理温度下实现限定组合的多元，均质和超纯13/15半导体的可再现生产和/或沉积。 这使得可以完全放弃使用有机取代的氮化合物如1,1-二甲基肼作为氮源，与用已知的方法生产的13/15半导体和/或13/15半导体层相比，其显着降低氮污染 生产方法。