摘要:
The invention provides the use of at least one binary group 15 element compound of the general formula R1R2E-E′R3R4 (I) or R5E(E′R6R7)2 (II) as the educt in a vapor deposition process. In this case, R1, R2, R3 and R4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E′ are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminations—compared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.
摘要翻译:本发明提供了至少一种通式R 1 R 2 E-E'R 3 R 4(I)或R 5 E(E'R 6 R 7)2(II)的二元15族元素化合物作为气相沉积工艺中的离析物的用途。 在这种情况下,R1,R2,R3和R4独立地选自由H,烷基(C1-C10)和芳基组成的组,并且E和E'独立地选自N,P ,As,Sb和Bi。 该用途不包括肼及其衍生物。 根据本发明的二元族15元素化合物允许在相对较低的处理温度下实现限定组合的多元,均质和超纯13/15半导体的可再现生产和/或沉积。 这使得可以完全放弃使用有机取代的氮化合物如1,1-二甲基肼作为氮源,与用已知的方法生产的13/15半导体和/或13/15半导体层相比,其显着降低氮污染 生产方法。
摘要:
A method of purifying crude organometallic compounds using a plurality of distillation columns is provided. This method effectively removes both relatively more volatile impurities and relatively less volatile impurities as compared to the organometallic compound.
摘要:
1. An organoantimony compound represented by the formula (1), processes for producing polymers with use of the compound, and polymers
wherein R 1 and R 2 are C 1 -C 8 alkyl, aryl, substituted aryl or an aromatic heterocyclic group, R 3 and R 4 are each a hydrogen atom or C 1 -C 8 alkyl, and R 5 is aryl, substituted aryl, an aromatic heterocyclic group, oxycarbonyl or cyano. P
摘要:
The invention concerns the use of stabilized metallo-organic adduct compounds for producing thin films and epitactic coatings by vapour deposition.
摘要:
Disclosed are methods of preparing trialkyl Group VA metal compounds in high yield and high purity. Such trialkyl Group VA metal compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities.
摘要:
A process is provided for preparing nickel ylides which are themselves novel compounds defined by the following Formula I: wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 are either alike or different members selected from the group consisting of hydrogen, alkyl radicals having from about one to about 24 carbon atoms, preferably from about one to about 10 carbon atoms; aryl radicals having from about six to about 20 carbon atoms, preferably from about six to about 10 carbon atoms; alkenyl radicals having from about two to about 30 carbon atoms, preferably from about two to about 20 carbon atoms; cycloalkyl radicals having from about three to about 40 carbon atoms, preferably from about three to about 30 carbon atoms; aralkyl and alkaryl radicals having from about six to about 40 carbon atoms, preferably from about six to about 30 carbon atoms; a halogen radical selected from the group consisting of fluorine, chlorine, bromine and iodine, preferably chlorine; a hydroxyl group; an alkoxy or aryloxy group; a hydrocarbyl group, such as defined above, carrying halogen, hydroxyl or alkoxy or aryloxy; and a sulfonato group (-SO 3 -) or an alkyl, aryl, alkenyl, cycloalkyl, aralkyl or alkaryl group carrying a sulfonato group; provided that at least one of R,, R 2 and R 3 is a sulfonato group or an alkyl, aryl, alkenyl, cycloalkyl, aralkyl or alkaryl, as defined above, carrying a sulfonato group; M is sulfur or oxygen, preferably oxygen; E is phosphorus, arsenic, antimony or nitrogen, preferably phosphorus; and F is phosphorus, arsenic or antimony, preferably phosphorus. The process comprises reacting a ligand defined by the following formula: with an alpha-substituted ketone or aldehyde or an alpha-substituted thioketone or thioaldehyde defined by the following formula: to obtain the metal salt defined by the following Formula II: wherein R 1 , R 2 , R 3 , R 7 , R 8 , F and M are as defined above and X is a halogen radical selected from the group consisting of fluorine, chlorine, bromine and iodine, preferably chlorine and bromine, a tosyl group (a tolune sulfonate group), or an acetate group. This metal salt is reacted with a base to obtain the novel ylide defined by the following Formula III: wherein R 1 , R 2 , R 3 , R 7 , R 8 , F and M are as defined above. This ylide is then reacted with (1) a zero valent nickel compound and (2) a ligand having the formula: wherein R 4 , R 5 , R 6 and E are as defined above.
摘要:
A new group of nickel ylides is provided that is highly active at relatively low operating temperatures and pressures in the oligomerization of ethylene. The compounds can be defined by the following Formula I: wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 are either alike or different members selected from the group consisting of hydrogen, alkyl radicals having from about one to about 24 carbon atoms, preferably from about one to about 10 carbon atoms; aryl radicals having from about six to about 20 carbon atoms, preferably from about six to about 10 carbon atoms; alkenyl radicals having from about two to about 30 carbons atoms, preferably from about two to about 20 carbon atoms; cycloalkyl radicals having from about three to about 40 carbon atoms, preferably from about three to about 30 carbon atoms; aralkyl and alkaryl radicals having from about six to about 40 carbon atoms, preferably from about six to about 30 carbon atoms; a halogen radical selected from the group consisting of fluorine, chlorine, bromine and iodine, preferably chlorine; a hydroxyl group; an alkoxy or aryloxy group; and a hydrocarbyl group, such as defined above, carrying halogen, hydroxyl or alkoxy or aryloxy; provided that at least one, preferably from about one to about four, of each of R 1 to R 8 is a sulfonato group (-SO 3 -) or an alkyl, aryl, alkenyl, cycloalkyl, aralkyl or alkaryl group carrying a sulfonato group; M is sulfur or oxygen, preferably oxygen; E is phosphorus, arsenic, antimony or nitrogen, preferably phosphorus; and F is phosphorus, arsenic or antimony, preferably phosphorus.