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公开(公告)号：EP3265420B1
公开(公告)日：2019-06-19
申请号：EP16713656.3
申请日：2016-03-03
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3.发明公开SILICON-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS OF USE THEREOF FOR IMPROVING ION BEAM CURRENT AND PERFORMANCE DURING SILICON ION IMPLANTATION 审中-公开系统和使用的硅质DOTIERSTOFFZUSAMMENSETZUNGEN方法，以改善离子束电流与执行过程中的硅离子注入
公开(公告)号：EP2891172A1
公开(公告)日：2015-07-08
申请号：EP13762931.7
申请日：2013-08-28
IPC分类号： H01J37/317 , H01J37/08
摘要： A dopant gas composition, a system and method thereof for improving beam current during silicon ion implantation are provided. The silicon ion implant process involves utilizing a first silicon-based co-species and a second species. The second species is selected to have an ionization cross-section higher than that of the first silicon-based species at an operating arc voltage of an ion source utilized during generation and implantation of active silicon ions species. The active silicon ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated solely from SiF4.
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4.发明公开
公开(公告)号：EP4294960A1
公开(公告)日：2023-12-27
申请号：EP22707950.6
申请日：2022-02-11
发明人： SINHA, Ashwini, K. , SONG, Xuemei , KANE, William, S. , CHO, Youn-Joung , CHUNG, Wonwoong , HAN, Yeonock
IPC分类号： C23C16/448 , C23C16/26 , C10L3/04 , F17C11/00
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公开(公告)号：EP2936540B1
公开(公告)日：2019-02-13
申请号：EP13821337.6
申请日：2013-12-20
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公开(公告)号：EP3005396B1
公开(公告)日：2018-07-04
申请号：EP14732764.7
申请日：2014-05-28
IPC分类号： H01J37/08 , H01J37/317
CPC分类号： H01L21/265 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01L21/67017 , Y10T137/86348 , Y10T137/88054
摘要： A novel method and system for using aluminum dopant compositions is provided. A composition of the aluminum dopant compositions is selected with sufficient vapor pressure and minimal carbon content, thereby enabling ease of delivery to an ion implant process and substantial reduction of carbon deposition during Al ion implantation. The source material is preferably stored and delivered from a sub-atmospheric storage and delivery device to enhance safety and reliability during the Al ion implantation process.
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7.发明公开ALUMINIUM DOPANT COMPOSITIONS, SUB-ATMOSPHERIC STORAGE AND DELIVERY PACKAGE CONTAINING SUCH COMPOSITIONS, AND METHOD OF STORING AND DELIVERING SUCH COMPOSITIONS 有权ALUMINIUMDOTIERMITTELZUSAMMENSETZUNGEN，低于大气压的存储和分配盘根存储和发行这类组合物的这样的组合物和方法
公开(公告)号：EP3005396A1
公开(公告)日：2016-04-13
申请号：EP14732764.7
申请日：2014-05-28
IPC分类号： H01J37/08 , H01J37/317
CPC分类号： H01L21/265 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01L21/67017 , Y10T137/86348 , Y10T137/88054
摘要： A novel method and system for using aluminum dopant compositions is provided. A composition of the aluminum dopant compositions is selected with sufficient vapor pressure and minimal carbon content, thereby enabling ease of delivery to an ion implant process and substantial reduction of carbon deposition during Al ion implantation. The source material is preferably stored and delivered from a sub-atmospheric storage and delivery device to enhance safety and reliability during the Al ion implantation process.
摘要翻译： 提供了一种使用铝掺杂剂组合物的新方法和系统。 铝掺杂剂的组合物，选择具有足够的蒸气压力和最小的碳含量的组合物，由此铝在离子注入期间使容易输送到在离子注入工艺和积碳的显着降低。 源材料优选地被存储和从低于大气压的存储和递送装置递送期间将Al离子注入工艺，以提高安全性和可靠性。
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8.发明公开
公开(公告)号：EP4337365A1
公开(公告)日：2024-03-20
申请号：EP22707579.3
申请日：2022-02-17
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公开(公告)号：EP3727992A1
公开(公告)日：2020-10-28
申请号：EP18833739.8
申请日：2018-12-11
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公开(公告)号：EP2891172B1
公开(公告)日：2019-10-30
申请号：EP13762931.7
申请日：2013-08-28
IPC分类号： H01J37/317 , H01J37/08
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