BORON-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS OF USE THEREOF FOR IMPROVING ION BEAM CURRENT AND PERFORMANCE DURING BORON ION IMPLANTATION
    3.
    发明公开
    BORON-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS OF USE THEREOF FOR IMPROVING ION BEAM CURRENT AND PERFORMANCE DURING BORON ION IMPLANTATION 审中-公开
    含硼DOTIERMITTELZUSAMMENSETZUNGEN,FOR USE系统及其方法用于喷气STREAM离子和性能期间,硼离子植入的改进

    公开(公告)号:EP3114699A1

    公开(公告)日:2017-01-11

    申请号:EP15709078.8

    申请日:2015-03-03

    IPC分类号: H01J37/317

    摘要: A novel composition, system and method thereof for improving beam current during boron ion implantation are provided. The boron ion implant process involves utilizing B2H6, BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.