公开(公告)号：EP3075010B1

公开(公告)日：2018-01-10

申请号：EP14815124

申请日：2014-11-13

申请人： QUALCOMM INC

发明人： LI XIA ,  KIM DAEIK DANIEL ,  YANG BIN ,  KIM JONGHAE ,  PERRY DANIEL WAYNE

IPC分类号： H01L27/07 ,  G05F3/16 ,  H01L29/739

CPC分类号： H01L29/7393 ,  G05F3/16 ,  H01L27/0705

摘要： A method includes biasing a first gate voltage to enable unipolar current to flow from a first region of a transistor to a second region of the transistor according to a field-effect transistor (FET)-type operation. The method also includes biasing a body terminal to enable bipolar current to flow from the first region to the second region according to a bipolar junction transistor (BJT)-type operation. The unipolar current flows concurrently with the bipolar current to provide dual mode digital and analog device in complementary metal oxide semiconductor (CMOS) technology.