公开(公告)号：EP3075010B1

公开(公告)日：2018-01-10

申请号：EP14815124

申请日：2014-11-13

Applicant: QUALCOMM INC

Inventor： LI XIA ,  KIM DAEIK DANIEL ,  YANG BIN ,  KIM JONGHAE ,  PERRY DANIEL WAYNE

IPC: H01L27/07 ,  G05F3/16 ,  H01L29/739

CPC classification number: H01L29/7393 ,  G05F3/16 ,  H01L27/0705

Abstract: A method includes biasing a first gate voltage to enable unipolar current to flow from a first region of a transistor to a second region of the transistor according to a field-effect transistor (FET)-type operation. The method also includes biasing a body terminal to enable bipolar current to flow from the first region to the second region according to a bipolar junction transistor (BJT)-type operation. The unipolar current flows concurrently with the bipolar current to provide dual mode digital and analog device in complementary metal oxide semiconductor (CMOS) technology.

公开(公告)号：EP2419933A4

公开(公告)日：2013-04-03

申请号：EP10765114

申请日：2010-04-14

Applicant: QUALCOMM INC

Inventor： ZHU XIAOCHUN ,  NOWAK MATTHEW ,  LI XIA ,  KANG SEUNG H

IPC: G11C11/16 ,  H01F10/32 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3254 ,  H01F10/3272 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12