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    Nanostructures and methods for manufacturing the same
    1.
    发明授权
    Nanostructures and methods for manufacturing the same 有权
    纳米结构和它们的制备方法

    公开(公告)号：EP2302108B1

    公开(公告)日：2012-05-09

    申请号：EP10194201.9

    申请日：2003-07-08

    申请人： QuNano AB

    发明人： Samuelson, Lars ,  Ohlsson, Jonas

    IPC分类号： C30B11/12 ,  C30B29/40 ,  C30B29/60

    CPC分类号： H01L31/035227 ,  B82Y10/00 ,  C30B11/00 ,  C30B11/12 ,  C30B25/00 ,  C30B25/02 ,  C30B25/14 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/20 ,  H01L29/66318 ,  H01L29/7371 ,  H01L29/882 ,  H01L31/022466 ,  H01L31/048 ,  H01L31/068 ,  H01L33/04 ,  Y02E10/547 ,  Y10S977/762 ,  Y10S977/763

    摘要： A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps. Thus a resonant tunneling diode comprises a nanowhisker having a seed particle melt at one end, and a column of a constant diameter with a nanometer dimension, such as to exhibit quantum confinement effects, the column comprising first and second semiconductor portions comprising respectively an emitter and a collector, and, disposed between the first and second semiconductor portions, third and fourth portions of material having a different band gap from that of the first and second semiconductor portions, and a fifth central portion of a semiconductor material having a different band gap from that of the third and fourth portions, disposed between the third and fourth portions and forming a quantum weil. The RTD is made by a method including depositing a seed particle on a substrate, and exposing the seed particle to materials under controlled conditions of temperature and pressure such as to form a melt with the seed particle, so that the seed particle rises on top of a column whereby to form a nanowhisker, the column of the nanowhisker having a constant diameter of a nanometer dimension; during the growth of the column, selectively changing the compositions of said gases whereby to abruptly change the composition of the material of the column at regions along its length, whilst retaining epitaxial growth, wherein lattice mismatch between the materials of the portions is accommodated by radial outward bulging of the whisker at the boundaries.

    A nanoscale electronic device
    3.
    发明公开
    A nanoscale electronic device 审中-公开
    纳米级电子设备

    公开(公告)号：EP2383785A3

    公开(公告)日：2012-02-22

    申请号：EP11175291.1

    申请日：2006-06-16

    申请人： QuNano AB

    发明人： Samuelson, Lars ,  Wernersson, Lars-Erik ,  Lind, Erik ,  Bryllert, Tomas

    IPC分类号： H01L29/775 ,  H01L29/165 ,  H01L29/205

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/165 ,  H01L29/205 ,  H01L29/775

    摘要： The invention relates to a nanoscale electronic device comprising in particular a metal insulator semiconductor field effect transistor (MISFET). It comprises at least one nanowire (205) as an active part of the device, the nanowire (205) being formed from a substrate (210). The nanowire is provided with at least a first and second contact (240,250), contacting the nanowire at different levels from the substrate. There is provided a first external electrode (241) connecting to the first contact (240), and a second external electrode (251) connecting to the second contact (250), the first external electrode (241) being arranged in a cross-bar configuration with the second external electrode (251).

    A nanoscale electronic device
    4.
    发明公开
    A nanoscale electronic device 审中-公开
    Nanoskalige elektronische Vorrichtung

    公开(公告)号：EP2383785A2

    公开(公告)日：2011-11-02

    申请号：EP11175291.1

    申请日：2006-06-16

    申请人： QuNano AB

    发明人： Samuelson, Lars ,  Wernersson, Lars-Erik ,  Lind, Erik ,  Bryllert, Tomas

    IPC分类号： H01L29/775 ,  H01L29/165 ,  H01L29/205

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/165 ,  H01L29/205 ,  H01L29/775

    摘要： The invention relates to a nanoscale electronic device comprising in particular a metal insulator semiconductor field effect transistor (MISFET). It comprises at least one nanowire (205) as an active part of the device, the nanowire (205) being formed from a substrate (210). The nanowire is provided with at least a first and second contact (240,250), contacting the nanowire at different levels from the substrate. There is provided a first external electrode (241) connecting to the first contact (240), and a second external electrode (251) connecting to the second contact (250), the first external electrode (241) being arranged in a cross-bar configuration with the second external electrode (251).

    摘要翻译： 本发明涉及一种特别包括金属绝缘体半导体场效应晶体管（MISFET）的纳米级电子器件。 它包括至少一个纳米线（205）作为器件的有源部分，纳米线（205）由衬底（210）形成。 纳米线设置有至少一个第一和第二接触件（240,250），该接触件与衬底的不同级别的纳米线接触。 提供连接到第一接触件（240）的第一外部电极（241）和连接到第二接触件（250）的第二外部电极（251），第一外部电极（241）布置在横杆 配置有第二外部电极（251）。

    Nanostructures and methods for manufacturing the same
    5.
    发明公开
    Nanostructures and methods for manufacturing the same 有权
    Nanostrukturen und Verfahren zu ihrer Herstellung

    公开(公告)号：EP2302108A1

    公开(公告)日：2011-03-30

    申请号：EP10194201.9

    申请日：2003-07-08

    申请人： QuNano AB

    发明人： Samuelson, Lars ,  Ohlsson, Jonas

    IPC分类号： C30B11/12 ,  C30B29/40 ,  C30B29/60

    CPC分类号： H01L31/035227 ,  B82Y10/00 ,  C30B11/00 ,  C30B11/12 ,  C30B25/00 ,  C30B25/02 ,  C30B25/14 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/20 ,  H01L29/66318 ,  H01L29/7371 ,  H01L29/882 ,  H01L31/022466 ,  H01L31/048 ,  H01L31/068 ,  H01L33/04 ,  Y02E10/547 ,  Y10S977/762 ,  Y10S977/763

    摘要： A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps. Thus a resonant tunneling diode comprises a nanowhisker having a seed particle melt at one end, and a column of a constant diameter with a nanometer dimension, such as to exhibit quantum confinement effects, the column comprising first and second semiconductor portions comprising respectively an emitter and a collector, and, disposed between the first and second semiconductor portions, third and fourth portions of material having a different band gap from that of the first and second semiconductor portions, and a fifth central portion of a semiconductor material having a different band gap from that of the third and fourth portions, disposed between the third and fourth portions and forming a quantum weil. The RTD is made by a method including depositing a seed particle on a substrate, and exposing the seed particle to materials under controlled conditions of temperature and pressure such as to form a melt with the seed particle, so that the seed particle rises on top of a column whereby to form a nanowhisker, the column of the nanowhisker having a constant diameter of a nanometer dimension; during the growth of the column, selectively changing the compositions of said gases whereby to abruptly change the composition of the material of the column at regions along its length, whilst retaining epitaxial growth, wherein lattice mismatch between the materials of the portions is accommodated by radial outward bulging of the whisker at the boundaries.

    摘要翻译： 通过用具有不同带隙的不同材料形成晶须的长度段，在纳米晶须中形成共振隧道二极管和其它一维电子，光子结构和机电MEMS器件作为异质结构。 因此，共振隧道二极管包括在一端具有种子颗粒熔体的纳米晶须和具有纳米尺寸的恒定直径的柱，例如显示量子限制效应，所述柱包括第一和第二半导体部分，分别包括发射极和 集电体，并且设置在第一和第二半导体部分之间，具有与第一和第二半导体部分的带隙不同的带隙的材料的第三和第四部分，以及具有与第一和第二半导体部分不同带隙的半导体材料的第五中心部分 第三部分和第四部分的第三部分和第四部分之间，设置在第三部分和第四部分之间并形成量子裂纹。 RTD通过包括将种子颗粒沉积在基材上的方法制备，并且在温度和压力的受控条件下将种子颗粒暴露于材料，以便与种子颗粒形成熔体，使得种子颗粒在 形成纳米晶须的柱，纳米晶须柱具有恒定直径的纳米尺寸; 在柱的生长期间，选择性地改变所述气体的组成，从而在保持外延生长的同时保持外延生长同时突然改变其长度区域的柱材料的组成，其中部分材料之间的晶格失配通过径向 在晶界向外膨胀的边界。