公开(公告)号：EP2959518B1

公开(公告)日：2017-11-29

申请号：EP14707882.8

申请日：2014-02-11

申请人： Qualcomm Incorporated

发明人： XIA, William H. ,  WU, Wenqing ,  YUEN, Kendrick H. ,  BANERJEE, Abhishek ,  LI, Xia ,  KANG, Seung H. ,  KIM, Jung Pill

IPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693 ,  H01L43/08 ,  H01L43/12

摘要： A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.

公开(公告)号：EP2959518A1

公开(公告)日：2015-12-30

申请号：EP14707882.8

申请日：2014-02-11

申请人： Qualcomm Incorporated

发明人： XIA, William H. ,  WU, Wenqing ,  YUEN, Kendrick H. ,  BANERJEE, Abhishek ,  LI, Xia ,  KANG, Seung H. ,  KIM, Jung Pill

IPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693 ,  H01L43/08 ,  H01L43/12

摘要： A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.

摘要翻译： 存储单元包括耦合到磁隧道结（MTJ）结构的细长第一电极和与耦合到MTJ结构的细长第一电极对准的细长第二电极。 细长电极被配置为引导开关电流感应磁场的相互添加部分通过MTJ。 响应于开关电流的应用，相互添加的部分增强了MTJ的切换。