SMALL FORM FACTOR MAGNETIC SHIELD FOR MAGNETORESTRICTIVE RANDOM ACCESS MEMORY (MRAM)
    3.
    发明公开
    SMALL FORM FACTOR MAGNETIC SHIELD FOR MAGNETORESTRICTIVE RANDOM ACCESS MEMORY (MRAM) 有权
    具有小的形状因子磁屏蔽FOR磁阻随机存取存储器(MRAM)

    公开(公告)号:EP2954555A2

    公开(公告)日:2015-12-16

    申请号:EP14703762.6

    申请日:2014-01-31

    摘要: Some implementations provide a die that includes a magnetoresistive random access memory (MRAM) cell array that includes several MRAM cells. The die also includes a first ferromagnetic layer positioned above the MRAM cell array, a second ferromagnetic layer positioned below the MRAM cell array, and several vias positioned around at least one MRAM cell. The via comprising a ferromagnetic material. In some implementations, the first ferromagnetic layer, the second ferromagnetic layer and the several vias define a magnetic shield for the MRAM cell array. The MRAM cell may include a magnetic tunnel junction (MTJ). In some implementations, the several vias traverse at least a metal layer and a dielectric layer of the die. In some implementations, the vias are through substrate vias. In some implementations, the ferromagnetic material has high permeability and high B saturation.

    NATIVE DEVICES HAVING IMPROVED DEVICE CHARACTERISTICS AND METHODS FOR FABRICATION
    4.
    发明公开
    NATIVE DEVICES HAVING IMPROVED DEVICE CHARACTERISTICS AND METHODS FOR FABRICATION 审中-公开
    具有改进的设备特点和方法本机设备

    公开(公告)号:EP2564416A1

    公开(公告)日:2013-03-06

    申请号:EP11718563.7

    申请日:2011-04-18

    摘要: A method for fabricating a native device is presented. The method includes forming a gate structure over a substrate starting at an outer edge of an inner marker region, where the gate structure extends in a longitudinal direction, and performing MDD implants, where each implant is performed using a different orientation with respect to the gate structure, performing pocket implants, where each implant is performed using a different orientation with respect to the gate structure, and concentrations of the pocket implants vary based upon the orientations. A transistor fabricated as a native device, is presented, which includes an inner marker region, an active outer region which surrounds the inner marker region, a gate structure coupled to the inner marker region, and first and second source/drain implants located within the active outer region and interposed between the first source/drain implant and the second source/drain implant.

    AN INTEGRATED CIRCUIT MODULE WITH LEAD FRAME MICRO-NEEDLES
    5.
    发明公开
    AN INTEGRATED CIRCUIT MODULE WITH LEAD FRAME MICRO-NEEDLES 审中-公开
    一种带引线框微型针的集成电路模块

    公开(公告)号:EP3166475A1

    公开(公告)日:2017-05-17

    申请号:EP15731164.8

    申请日:2015-06-04

    IPC分类号: A61B5/00 A61M37/00 A61B5/04

    摘要: An integrated circuit (IC) module with a lead frame micro-needle for a medical device, and methods of forming the IC module are described. The methods include forming a lead frame blank including a micro-needle integrally formed therein. The micro-needle may be bent beyond an initial lower side of the lead frame blank. The initial lower side may be joined with a protection layer such that the bent micro-needle is embedded in the protection layer, which may be removably attached to the initial lower side and the bent micro-needle. An IC component may be affixed to an upper side of the lead frame blank. The IC component and an upper surface of a core of the lead frame blank may be encapsulated with a molding compound forming a packaging of the IC module. Removal of the protection layer may expose the bent micro-needle projecting away from the packaging.

    摘要翻译: 描述了具有用于医疗装置的引线框微针的集成电路(IC)模块,以及形成IC模块的方法。 该方法包括形成包括一体形成在其中的微针的引线框架坯件。 微针可以弯曲超过引线框架坯件的初始下侧。 初始下侧可以与保护层接合,使得弯曲的微针嵌入保护层中,该保护层可以可移除地附接到初始下侧和弯曲的微针。 IC元件可以被固定到引线框架坯件的上侧。 IC元件和引线框架毛坯的芯的上表面可以用形成IC模块的封装的模制化合物封装。 去除保护层可以使弯曲的微型针从包装突出。