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1.发明公开Capacitive pressure sensors for high temperature applications 审中-公开Kapazitive DrucksensorenfürHochtemperaturanwendungen
公开(公告)号：EP2873958A1
公开(公告)日：2015-05-20
申请号：EP14193262.4
申请日：2014-11-14
Applicant: ROSEMOUNT AEROSPACE INC.
Inventor： Zhang, Weibin , Fink, Anita , Fahimi, Saeed , Childress, Kimiko J.
CPC classification number: G01L1/14 , G01L9/0047 , G01L9/0075 , G01L19/0076 , G01L19/0618
Abstract: A capacitive pressure sensor (100) includes a substrate wafer (114) and a diaphragm wafer (112). The substrate wafer defines a substrate recess (R") with a first depth (D2). The diaphragm wafer defines a diaphragm recess (R"') with a second depth (D3). The diaphragm wafer is bonded to the substrate wafer such that the substrate and diaphragm recesses form a height differentiated pressure chamber (126).
Abstract translation: 电容式压力传感器（100）包括衬底晶片（114）和光阑晶片（112）。 衬底晶片限定具有第一深度（D2）的衬底凹槽（R“）。膜片晶片限定具有第二深度（D3）的隔膜凹部（R”'）。 隔膜晶片结合到基板晶片，使得基板和隔膜凹槽形成高度差分压力室（126）。
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公开(公告)号：EP2873958B1
公开(公告)日：2019-08-07
申请号：EP14193262.4
申请日：2014-11-14
Applicant: ROSEMOUNT AEROSPACE INC.
Inventor： Zhang, Weibin , Fink, Anita , Fahimi, Saeed , Childress, Kimiko J.
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