公开(公告)号：EP3158365A2

公开(公告)日：2017-04-26

申请号：EP15847783.6

申请日：2015-06-22

申请人： Rensselaer Polytechnic Institute

发明人： DAHAL, Rajendra P. ,  BHAT, Ishwara B. ,  DANON, Yaron ,  LU, James Jian-Qiang

IPC分类号： G01T3/08 ,  H01L27/14 ,  H01L31/115 ,  H01L31/18

CPC分类号： H01L31/115 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02562 ,  H01L21/0262 ,  H01L31/03044 ,  H01L31/0384 ,  H01L31/184 ,  H01L31/1856 ,  Y02E10/544

摘要： Radiation detecting-structures and fabrications methods thereof are presented. The methods include, for instance: providing a substrate, the substrate including at least one trench extending into the substrate from an upper surface thereof; and epitaxially forming a radiation-responsive semiconductor material layer from one or more sidewalls of the at least one trench of the substrate, the radiation-responsive semiconductor material layer responding to incident radiation by generating charge carriers therein. In one embodiment, the sidewalls of the at least one trench of the substrate include a (111) surface of the substrate, which facilitates epitaxially forming the radiation-responsive semiconductor material layer. In another embodiment, the radiation-responsive semiconductor material layer includes hexagonal boron nitride, and the epitaxially forming includes providing the hexagonal boron nitride with an a-axis aligned parallel to the sidewalls of the trench.

摘要翻译： 提出了辐射检测结构及其制备方法。 所述方法包括例如：提供衬底，所述衬底包括从其上表面延伸到衬底中的至少一个沟槽; 并且从所述衬底的所述至少一个沟槽的一个或多个侧壁外延地形成辐射响应半导体材料层，所述辐射响应半导体材料层通过在其中产生电荷载体来响应入射辐射。 在一个实施例中，衬底的至少一个沟槽的侧壁包括衬底的（111）表面，其有助于外延地形成辐射响应半导体材料层。 在另一个实施例中，辐射响应半导体材料层包括六边形氮化硼，并且外延形成包括提供平行于沟槽侧壁的a轴取向的六方氮化硼。

公开(公告)号：EP3158364A1

公开(公告)日：2017-04-26

申请号：EP15846071.7

申请日：2015-06-22

申请人： Rensselaer Polytechnic Institute

发明人： DAHAL, Rajendra P. ,  BHAT, Ishwara B. ,  DANON, Yaron ,  LU, James Jian-Qiang

IPC分类号： G01T3/08 ,  H01L31/115 ,  H01L31/18

CPC分类号： G01T1/24 ,  G01T3/08 ,  H01L31/0328 ,  H01L31/115 ,  H01L31/1185 ,  H01L31/18

摘要： Methods for fabricating radiation-detecting structures are presented. The methods include, for instance: fabricating a radiation-detecting structure, the fabricating including: providing a semiconductor substrate, the semiconductor substrate having a plurality of cavities extending into the semiconductor substrate from a surface thereof; and electrophoretically depositing radiation-detecting particles of a radiation-detecting material into the plurality of cavities extending into the semiconductor substrate, where the electrophoretically depositing fills the plurality of cavities with the radiation-detecting particles. In one embodiment, the providing can include electrochemically etching the semiconductor substrate to form the plurality of cavities extending into the semiconductor substrate. In addition, the providing can further include patterning the surface of the semiconductor substrate with a plurality of surface defect areas, and the electrochemically etching can include using the plurality of surface defect areas to facilitate electrochemically etching into the semiconductor substrate through the plurality of surface defect areas to form the plurality of cavities.

摘要翻译： 介绍了制造辐射探测结构的方法。 所述方法例如包括：制造辐射检测结构，所述制造包括：提供半导体衬底，所述半导体衬底具有从其表面延伸到所述半导体衬底中的多个空腔; 以及将辐射检测材料的放射线检测粒子电泳沉积到延伸到半导体衬底中的多个空腔中，其中电泳沉积用放射线检测粒子填充多个空腔。 在一个实施例中，提供可以包括电化学蚀刻半导体衬底以形成延伸到半导体衬底中的多个空腔。 此外，提供还可以包括图案化具有多个表面缺陷区域的半导体衬底的表面，并且电化学蚀刻可以包括使用多个表面缺陷区域以促进通过多个表面缺陷电化学蚀刻进入半导体衬底 形成多个空腔的区域。