SEMICONDUCTOR SENSOR HAVING A SUSPENDED STRUCTURE AND ITS MANUFACTURING METHOD
    2.
    发明公开
    SEMICONDUCTOR SENSOR HAVING A SUSPENDED STRUCTURE AND ITS MANUFACTURING METHOD 审中-公开
    HALBLEITERSENSOR MITAUFGEHÀ“NGTER STRUKTUR UND DESSEN HERSTELLUNGSVERFAHREN

    公开(公告)号:EP3077804A1

    公开(公告)日:2016-10-12

    申请号:EP14806252.4

    申请日:2014-12-02

    申请人: Robert Bosch GmbH

    IPC分类号: G01N27/12

    摘要: A semiconductor gas sensor device includes a substrate, a conductive layer supported by the substrate, a non-suitable seed layer, and a porous gas sensing layer portion. The non-suitable seed layer is formed from a first material and includes a first support portion supported by the conductive layer, a second support portion supported by the conductive layer, and a suspended seed portion extending from the first support portion to the second support portion and suspended above the conductive layer. The porous gas sensing layer portion is formed from a second material and is supported directly by the non-suitable seed layer in electrical communication with the conductive layer. The first material and the second material form a non-suitable pair of materials.

    摘要翻译: 半导体气体传感器装置包括衬底,由衬底支撑的导电层,非合适的晶种层和多孔气体感测层部分。 非合适种子层由第一材料形成,并且包括由导电层支撑的第一支撑部分,由导电层支撑的第二支撑部分和从第一支撑部分延伸到第二支撑部分的悬挂种子部分 并悬浮在导电层上方。 所述多孔气体感测层部分由第二材料形成,并且由与所述导电层电连通的所述非合适晶种层直接支撑。 第一材料和第二材料形成非合适的材料对。