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14 条记录 (耗时 0.011 秒)

    Filter comprising thin-film resonators and inductor, duplexer and fabricating methods thereof
    1.
    发明公开
    Filter comprising thin-film resonators and inductor, duplexer and fabricating methods thereof 有权
    过滤器Dünnfilmresonatorenund Induktor，Duplexer und deren Herstellungsverfahren

    公开(公告)号：EP1598934A2

    公开(公告)日：2005-11-23

    申请号：EP05253005.2

    申请日：2005-05-17

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Song, In-sang ,  Ha, Byeoung-ju ,  Park, Yun-kwon ,  Kim, Jong-seok ,  Kim, Duck-hwan ,  Nam, Kuang-woo ,  Park, Hae-seok ,  Hong, Seog-woo

    IPC分类号： H03H9/58 ,  H03H9/70 ,  H03H9/17 ,  H03H9/05 ,  H03H3/02

    CPC分类号： H03H9/564 ,  H03H3/02 ,  H03H9/0542 ,  H03H9/0571 ,  H03H9/173 ,  H03H9/568 ,  H03H9/605 ,  H03H9/706 ,  Y10T29/42

    摘要： A filter using an air gap type film bulk acoustic resonator is provided. The present filter includes a substrate on which a first port, a second port, and a ground port are formed to be connected to an external terminal; at least one first film bulk acoustic resonator serially connecting the first port to the second port on the substrate; at least one second film bulk acoustic resonator parallel connected to an interconnection node formed between the first port and the second port; and at least one inductor serially connecting the second film bulk acoustic resonator to the ground port. The inductor included in the filter is fabricated with the first and second film bulk acoustic resonators as one body. Accordingly, a small-sized filter may be fabricated through a simplified process.

    摘要翻译： 提供了使用气隙型膜体声波谐振器的滤波器。 本发明的滤波器包括：基板，其上形成有第一端口，第二端口和接地端口，以连接到外部端子; 至少一个第一膜体积声谐振器将第一端口与基板上的第二端口串联连接; 至少一个第二膜体声波谐振器并联连接到形成在所述第一端口和所述第二端口之间的互连节点; 以及将所述第二膜体声波谐振器串联连接到所述接地端口的至少一个电感器。 包括在滤波器中的电感器由第一和第二膜体声波谐振器制成为一体。 因此，可以通过简化的过程制造小尺寸滤波器。

    Electrostatic RF mems switches
    2.
    发明公开
    Electrostatic RF mems switches 有权
    微机电静电RF开关

    公开(公告)号：EP1391906A3

    公开(公告)日：2005-10-26

    申请号：EP03254975.0

    申请日：2003-08-11

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Song, In-sang ,  Lee, Moon-chul ,  Kim, Young-il ,  Shim, Dong-ha ,  Hong, Young-tack ,  Park, Sun-hee ,  Nam, Kuang-woo

    IPC分类号： H01H59/00 ,  H01H57/00 ,  H01P1/12

    CPC分类号： H01P1/127 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006

    摘要： A micro switch having a dielectric layer (2) having a movement region formed on a substrate (1), a conductive layer (3) formed on a predetermined portion of the movement region, a dielectric film (3') formed on the conductive layer (3), first and second electric conductors (9a,9b) formed a predetermined distance above the dielectric film (2), one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer (3) and the dielectric film (2) upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors (9a,9b) to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.

    Integrated filter including FBAR and SAW resonator and fabrication method therefor
    3.
    发明公开
    Integrated filter including FBAR and SAW resonator and fabrication method therefor 审中-公开
    用Dünnschichtvolumenwellenresonator，表面声波谐振器及其制造方法集成滤波

    公开(公告)号：EP1748557A2

    公开(公告)日：2007-01-31

    申请号：EP06012762.8

    申请日：2006-06-21

    申请人： Samsung Electronics Co., Ltd.

    发明人： Nam, Kuang-woo ,  Sunwoo, Kook-hyun ,  Song, In-sang ,  Kwon, Sang-wook ,  Kim, Duck-hwan ,  Kim, Chul-soo ,  Sul, Sang-chul ,  Park, Yun-kwon ,  Park, Hae-seok ,  Shin, Jea-shik ,  Shim, Dong-ha ,  Hong, Young-tack ,  Kim, Jong-seok ,  Chang, Seok-mo ,  Yun, Seok-chul

    IPC分类号： H03H9/58 ,  H03H3/02

    CPC分类号： H03H9/588 ,  H03H3/02 ,  H03H9/02228 ,  H03H2003/0071

    摘要： An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.

    摘要翻译： 集成滤波器包括薄膜体声谐振器（FBAR）和表面声波（SAW）谐振器和制造该集成滤波器的方法。 该集成滤波器包括：衬底（110）; 在预定的第一电极（120）定位在所述基板的上表面的第一区域; 定位在所述第一电极上的第一压电体层（130）; 定位在所述第一压电层上的第二电极（150）; 在上基底的上表面的预定第二区域设置的第二压电体层（140）; 和至少一个叉指式换能器（IDT）电极（160,170）定位在所述第二压电体层上。 IDT电极包括：在所述第二压电体层上的梳状结构形成的第一IDT电极（160）; 和在梳状结构形成的第二压电层上的第二IDT电极（170），以便与所述第一IDT电极啮合。 所述第一和第二压电层中形成的相同材料构成。 因此，为了集成滤波器在各频段其操作变得紧凑。

    Duplexer and method of fabrication
    4.
    发明公开
    Duplexer and method of fabrication 有权
    双工器和制造方法

    公开(公告)号：EP1548939A3

    公开(公告)日：2006-01-04

    申请号：EP04257188.5

    申请日：2004-11-19

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Song, In-Sang ,  Ha, Byeoung-ju, 507-1401 Jinsan Maeul Samsung ,  Park, Yun-kwon ,  Nam, Kuang-woo ,  Shim, Dong-ha

    IPC分类号： H03H9/70

    CPC分类号： H03H9/173 ,  H03H9/0571 ,  H03H9/564 ,  H03H9/706 ,  Y10T29/42

    摘要： A duplexer having a filter (300) implemented using thin Film Bulk Acoustic Resonators and an isolation part (200) which are integrally formed including a substrate (110), a transmitter filter (300) integrated on the substrate (110) to pass signals only in a frequency band for transmission, a receiver filter integrated on the substrate to pass signals only in a frequency band for reception, and an isolation part integrally formed with either one of the transmitter filter and the receiver filter to isolate the signals passed through the transmitter filter and the receiver filter from each other. The isolation part (200) includes a capacitor and an inductor. The capacitor is build using the FBAR membrane (130) as a dielectric layer. Since the isolation part is integrally formed with either one of the transmitter filter and the receiver filter, the duplexer can be manufactured in a small size by simplified processes.

    摘要翻译： 一种双工器，具有使用薄膜体声谐振器和整体形成的隔离部件（200）实现的滤波器（300），该隔离部件包括衬底（110），集成在衬底（110）上的发射器滤波器（300） 在用于传输的频带中，集成在基片上的接收器滤波器仅在用于接收的频带中传递信号，以及与发射器滤波器和接收器滤波器中的任何一个整体形成的隔离部分，以隔离通过发射器 过滤器和接收器相互过滤。 隔离部分（200）包括电容器和电感器。 使用FBAR膜（130）作为电介质层来构建电容器。 由于隔离部分与发射器滤波器和接收器滤波器中的任何一个整体形成，所以双工器可以通过简化的工艺以小尺寸制造。

    Electrostatic RF mems switches
    7.
    发明公开
    Electrostatic RF mems switches 有权
    Mikroelektromechanische elektrostatische RF Schalter

    公开(公告)号：EP1391906A2

    公开(公告)日：2004-02-25

    申请号：EP03254975.0

    申请日：2003-08-11

    申请人： Samsung Electronics Co., Ltd.

    发明人： Song, In-sang ,  Lee, Moon-chul ,  Kim, Young-il ,  Shim, Dong-ha ,  Hong, Young-tack ,  Park, Sun-hee ,  Nam, Kuang-woo

    IPC分类号： H01H59/00 ,  H01H57/00 ,  H01P1/12

    CPC分类号： H01P1/127 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006

    摘要： A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.

    摘要翻译： 一种具有形成在基板（1）上的运动区域的电介质层（2）的微型开关，形成在运动区域的预定部分上的导电层（3），形成在导电层 （3）中，形成在电介质膜（2）上方预定距离的第一和第二电导体（9a，9b），形成在移动区域上的一个或两个下电极，以及在两个上方形成预定距离的一个或两个上电极 下电极，一个或两个上电极在上电极和下电极之间发生静电力时向上移动导电层（3）和电介质膜（2），并且与第一和第二电导体（9a，9b）电容耦合 ）以允许电流在第一和第二电导体之间流动。 这样的微型开关具有高的开/关比和隔离度和简单的结构，并且可以在非常容易的过程中制造。

    Duplexer and method of fabrication
    9.
    发明授权
    Duplexer and method of fabrication 有权
    双工器和制造方法

    公开(公告)号：EP1548939B1

    公开(公告)日：2009-01-07

    申请号：EP04257188.5

    申请日：2004-11-19

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Song, In-Sang ,  Ha, Byeoung-ju, 507-1401 Jinsan Maeul Samsung ,  Park, Yun-kwon ,  Nam, Kuang-woo ,  Shim, Dong-ha

    IPC分类号： H03H9/70

    CPC分类号： H03H9/173 ,  H03H9/0571 ,  H03H9/564 ,  H03H9/706 ,  Y10T29/42

    摘要： A duplexer having a filter (300) implemented using thin Film Bulk Acoustic Resonators and an isolation part (200) which are integrally formed including a substrate (110), a transmitter filter (300) integrated on the substrate (110) to pass signals only in a frequency band for transmission, a receiver filter integrated on the substrate to pass signals only in a frequency band for reception, and an isolation part integrally formed with either one of the transmitter filter and the receiver filter to isolate the signals passed through the transmitter filter and the receiver filter from each other. The isolation part (200) includes a capacitor and an inductor. The capacitor is build using the FBAR membrane (130) as a dielectric layer. Since the isolation part is integrally formed with either one of the transmitter filter and the receiver filter, the duplexer can be manufactured in a small size by simplified processes.