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27 条记录 (耗时 0.012 秒)

    Band filter using film bulk acoustic resonator and method of fabricating the same
    3.
    发明公开
    Band filter using film bulk acoustic resonator and method of fabricating the same 审中-公开
    Bandfilter mitDünnschicht-Volumenwellen-Resonator和Verfahren zu seiner Herstellung

    公开(公告)号：EP1684420A2

    公开(公告)日：2006-07-26

    申请号：EP06001244.0

    申请日：2006-01-20

    申请人： Samsung Electronics Co., Ltd.

    发明人： Hong, Seog-woo ,  Ha, Byeoung-ju ,  Song, In-sang ,  Kim, Kyu-sik

    IPC分类号： H03H3/02 ,  H03H9/02 ,  H03H9/58 ,  B81C1/00

    CPC分类号： H03H3/02 ,  H03H9/02047 ,  H03H9/588 ,  H03H2003/023

    摘要： A band filter using a film bulk acoustic resonator and a method of fabricating the same. The method includes the steps of forming a membrane layer on a substrate, forming a plurality of resonators on an upper surface of the membrane layer, depositing a mask layer on a lower surface of the membrane layer and patterning the mask layer to form a plurality of main windows and sub windows, and forming cavities along the main windows in the substrate and forming sub walls in the cavities in such a way that the sub walls are separated apart from the membrane layer by using the notch effect caused during a dry etching. It is possible to precisely form cavities with desired sizes even if the cavities have different sizes, to reduce the notched areas in the cavities, to reduce the total size of the filter by decreasing a distance between the cavities and to reduce the total length of wires.

    摘要翻译： 一种使用膜体声波谐振器的带滤波器及其制造方法。 该方法包括以下步骤：在衬底上形成膜层，在膜层的上表面上形成多个谐振器，在膜层的下表面上沉积掩模层，并对掩模层进行图案化以形成多个 主窗口和子窗口，并且沿着基板中的主窗口形成空腔，并且以这样的方式在空腔中形成子壁，使得通过使用在干蚀刻期间引起的切口效应，子壁与膜层分离。 即使空腔具有不同的尺寸，也可以精确地形成具有期望尺寸的空腔，以减少空腔中的凹口区域，以通过减小空腔之间的距离来减小过滤器的总尺寸，并减小导线的总长度 。

    Film bulk acoustic resonator and a method for manufacturing the same
    5.
    发明公开
    Film bulk acoustic resonator and a method for manufacturing the same 有权
    AkustischerDünnschicht-Volumenwellenresonator und sein Herstellungsverfahren。

    公开(公告)号：EP1689080A2

    公开(公告)日：2006-08-09

    申请号：EP06000147.6

    申请日：2006-01-04

    申请人： Samsung Electronics Co., Ltd.

    发明人： Ha, Byeoung-ju ,  Hong, Seog-woo ,  Song, In-sang ,  Choi, Hyung

    IPC分类号： H03H9/17 ,  H03H3/02

    CPC分类号： H03H3/02 ,  H03H9/174 ,  Y10T29/42

    摘要： A film bulk acoustic resonator (FBAR) including a substrate (110) having an etched air gap (111) therethrough; a resonance part (141) having a first electrode (141), a piezoelectric film (143) and a second electrode (145) which are laminated in turn above the air gap; and an etching resistance layer disposed between the air gap and the resonance part to limit an etching depth in forming the air gap, thereby preventing damage to the resonance part (140).

    摘要翻译： 一种薄膜体声波谐振器（FBAR），包括：具有通过其蚀刻的气隙（111）的衬底（110） 具有第一电极（141），压电膜（143）和第二电极（145）的共振部分（141），其依次层叠在气隙上方; 以及设置在所述气隙和所述共振部之间的耐蚀刻层，以限制形成所述气隙的蚀刻深度，从而防止对所述共振部（140）的损坏。

    Filter comprising thin-film resonators and inductor, duplexer and fabricating methods thereof
    6.
    发明公开
    Filter comprising thin-film resonators and inductor, duplexer and fabricating methods thereof 有权
    过滤器Dünnfilmresonatorenund Induktor，Duplexer und deren Herstellungsverfahren

    公开(公告)号：EP1598934A2

    公开(公告)日：2005-11-23

    申请号：EP05253005.2

    申请日：2005-05-17

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Song, In-sang ,  Ha, Byeoung-ju ,  Park, Yun-kwon ,  Kim, Jong-seok ,  Kim, Duck-hwan ,  Nam, Kuang-woo ,  Park, Hae-seok ,  Hong, Seog-woo

    IPC分类号： H03H9/58 ,  H03H9/70 ,  H03H9/17 ,  H03H9/05 ,  H03H3/02

    CPC分类号： H03H9/564 ,  H03H3/02 ,  H03H9/0542 ,  H03H9/0571 ,  H03H9/173 ,  H03H9/568 ,  H03H9/605 ,  H03H9/706 ,  Y10T29/42

    摘要： A filter using an air gap type film bulk acoustic resonator is provided. The present filter includes a substrate on which a first port, a second port, and a ground port are formed to be connected to an external terminal; at least one first film bulk acoustic resonator serially connecting the first port to the second port on the substrate; at least one second film bulk acoustic resonator parallel connected to an interconnection node formed between the first port and the second port; and at least one inductor serially connecting the second film bulk acoustic resonator to the ground port. The inductor included in the filter is fabricated with the first and second film bulk acoustic resonators as one body. Accordingly, a small-sized filter may be fabricated through a simplified process.

    摘要翻译： 提供了使用气隙型膜体声波谐振器的滤波器。 本发明的滤波器包括：基板，其上形成有第一端口，第二端口和接地端口，以连接到外部端子; 至少一个第一膜体积声谐振器将第一端口与基板上的第二端口串联连接; 至少一个第二膜体声波谐振器并联连接到形成在所述第一端口和所述第二端口之间的互连节点; 以及将所述第二膜体声波谐振器串联连接到所述接地端口的至少一个电感器。 包括在滤波器中的电感器由第一和第二膜体声波谐振器制成为一体。 因此，可以通过简化的过程制造小尺寸滤波器。

    Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same
    7.
    发明公开
    Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same 有权
    空气间隙型的薄膜谐振器，其制造方法及其在所述过滤器和双工器使用

    公开(公告)号：EP1523097A2

    公开(公告)日：2005-04-13

    申请号：EP04255782.7

    申请日：2004-09-22

    申请人： Samsung Electronics Co., Ltd.

    发明人： Song, In-sang ,  Ha, Byeoung-ju ,  Hwang, Jun-sik ,  Park, Yun-kwon

    IPC分类号： H03H3/02

    CPC分类号： H03H9/587 ,  H03H3/02 ,  H03H9/105 ,  H03H9/173 ,  Y10T29/42

    摘要： An air-gap type thin film bulk acoustic resonator (FBAR) and method for fabricating the same. Also disclosed are a filter and a duplexer employing the air-gap type FBAR. The air-gap type FBAR includes: a first substrate (200) having a cavity part (210) at a predetermined region on its upper surface; a dielectric film stacked on the upper part of the first substrate; a first air gap formed between the first substrate and the dielectric film (220); a stacked resonance part (230) including a lower electrode/piezoelectric layer/upper electrode formed on the upper part of the dielectric film; a second substrate (240) having a cavity part at a predetermined region on its lower surface and joined to the first substrate; and a second air gap (250) formed between the stacked resonance part and the second substrate. A thin film of predetermined thickness made of a liquid crystal polymer (LCP) may be used as the dielectric film.

    Air gap type FBAR, duplexer using the FBAR, and fabricating methods thereof
    9.
    发明公开
    Air gap type FBAR, duplexer using the FBAR, and fabricating methods thereof 有权
    Dünnschicht-Resonator von Luftspaltbauart，Duplexer mit dem Resonator und deren Herstellungsverfahren

    公开(公告)号：EP1469599A3

    公开(公告)日：2005-05-18

    申请号：EP04252170.8

    申请日：2004-04-14

    申请人： Samsung Electronics Co., Ltd.

    发明人： Park, Yun-Kwon ,  Song, In-sang ,  Ha, Byeoung-ju ,  Song, II-jong ,  Kim, Duck-hwan

    IPC分类号： H03H9/17 ,  H03H3/02

    CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/02133 ,  H03H9/0571 ,  H03H9/587 ,  H03H9/706 ,  Y10T29/42

    摘要： An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.

    摘要翻译： 气隙型膜体声波谐振器（FBAR）是通过固定两个基板部分而形成的，一个提供谐振结构，另一个提供分离结构，即空腔。 当固定两个基板部分时，共振结构在空腔之上，形成将谐振结构与支撑基板隔离的气隙。 FBAR可以用于形成双工器，其包括多个谐振结构，相应的多个空腔以及形成在空腔之间的隔离部分。 谐振结构和腔的独立创建都简化了处理，并允许额外的元件容易地集成在空腔中。