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18 条记录 (耗时 0.014 秒)

    Filter comprising thin-film resonators and inductor, duplexer and fabricating methods thereof
    1.
    发明公开
    Filter comprising thin-film resonators and inductor, duplexer and fabricating methods thereof 有权
    过滤器Dünnfilmresonatorenund Induktor，Duplexer und deren Herstellungsverfahren

    公开(公告)号：EP1598934A2

    公开(公告)日：2005-11-23

    申请号：EP05253005.2

    申请日：2005-05-17

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Song, In-sang ,  Ha, Byeoung-ju ,  Park, Yun-kwon ,  Kim, Jong-seok ,  Kim, Duck-hwan ,  Nam, Kuang-woo ,  Park, Hae-seok ,  Hong, Seog-woo

    IPC分类号： H03H9/58 ,  H03H9/70 ,  H03H9/17 ,  H03H9/05 ,  H03H3/02

    CPC分类号： H03H9/564 ,  H03H3/02 ,  H03H9/0542 ,  H03H9/0571 ,  H03H9/173 ,  H03H9/568 ,  H03H9/605 ,  H03H9/706 ,  Y10T29/42

    摘要： A filter using an air gap type film bulk acoustic resonator is provided. The present filter includes a substrate on which a first port, a second port, and a ground port are formed to be connected to an external terminal; at least one first film bulk acoustic resonator serially connecting the first port to the second port on the substrate; at least one second film bulk acoustic resonator parallel connected to an interconnection node formed between the first port and the second port; and at least one inductor serially connecting the second film bulk acoustic resonator to the ground port. The inductor included in the filter is fabricated with the first and second film bulk acoustic resonators as one body. Accordingly, a small-sized filter may be fabricated through a simplified process.

    摘要翻译： 提供了使用气隙型膜体声波谐振器的滤波器。 本发明的滤波器包括：基板，其上形成有第一端口，第二端口和接地端口，以连接到外部端子; 至少一个第一膜体积声谐振器将第一端口与基板上的第二端口串联连接; 至少一个第二膜体声波谐振器并联连接到形成在所述第一端口和所述第二端口之间的互连节点; 以及将所述第二膜体声波谐振器串联连接到所述接地端口的至少一个电感器。 包括在滤波器中的电感器由第一和第二膜体声波谐振器制成为一体。 因此，可以通过简化的过程制造小尺寸滤波器。

    Film bulk acoustic resonator having supports and manufacturing method therefor
    2.
    发明授权
    Film bulk acoustic resonator having supports and manufacturing method therefor 有权
    相同的声Filmresonator与支持以及制备方法

    公开(公告)号：EP1482638B1

    公开(公告)日：2016-01-13

    申请号：EP04252855.4

    申请日：2004-05-17

    申请人： Samsung Electronics Co., Ltd.

    发明人： Song, II-jong ,  Song, In-sang ,  Kim, Duck-hwan ,  Park, Yun-kwon ,  Ha, yeoung-ju 507-1401 Samsung 5th Apartment

    IPC分类号： H03H3/02

    CPC分类号： H03H9/172 ,  H03H3/02 ,  H03H9/0514 ,  H03H9/0547 ,  Y10T29/42

    摘要： A film bulk acoustic resonator (FBAR) has a support structure, a piezoelectric resonator, and a signal line that is electrically connected, e.g., through a via, to the piezoelectric resonator, all on a semiconductor substrate. Support(s) and/or the via mount the piezoelectric resonator at a predetermined distance from the semiconductor substrate, allowing an ideal shape of the resonator to be realized. The signal line may include a patterned inductor. A capacitor can be formed between the via and the signal line. The resonance characteristics can be enhanced since the substrate loss caused by the driving of the resonator can be prevented due to an air gap formed by the predetermined distance. The resonance frequency can be adjusted by altering the pattern of the inductor, the capacitance of the capacitor and/or the thickness of the piezoelectric layer, also allowing Impedance matching to be readily realized.

    Integrated filter including FBAR and SAW resonator and fabrication method therefor
    5.
    发明公开
    Integrated filter including FBAR and SAW resonator and fabrication method therefor 审中-公开
    用Dünnschichtvolumenwellenresonator，表面声波谐振器及其制造方法集成滤波

    公开(公告)号：EP1748557A2

    公开(公告)日：2007-01-31

    申请号：EP06012762.8

    申请日：2006-06-21

    申请人： Samsung Electronics Co., Ltd.

    发明人： Nam, Kuang-woo ,  Sunwoo, Kook-hyun ,  Song, In-sang ,  Kwon, Sang-wook ,  Kim, Duck-hwan ,  Kim, Chul-soo ,  Sul, Sang-chul ,  Park, Yun-kwon ,  Park, Hae-seok ,  Shin, Jea-shik ,  Shim, Dong-ha ,  Hong, Young-tack ,  Kim, Jong-seok ,  Chang, Seok-mo ,  Yun, Seok-chul

    IPC分类号： H03H9/58 ,  H03H3/02

    CPC分类号： H03H9/588 ,  H03H3/02 ,  H03H9/02228 ,  H03H2003/0071

    摘要： An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.

    摘要翻译： 集成滤波器包括薄膜体声谐振器（FBAR）和表面声波（SAW）谐振器和制造该集成滤波器的方法。 该集成滤波器包括：衬底（110）; 在预定的第一电极（120）定位在所述基板的上表面的第一区域; 定位在所述第一电极上的第一压电体层（130）; 定位在所述第一压电层上的第二电极（150）; 在上基底的上表面的预定第二区域设置的第二压电体层（140）; 和至少一个叉指式换能器（IDT）电极（160,170）定位在所述第二压电体层上。 IDT电极包括：在所述第二压电体层上的梳状结构形成的第一IDT电极（160）; 和在梳状结构形成的第二压电层上的第二IDT电极（170），以便与所述第一IDT电极啮合。 所述第一和第二压电层中形成的相同材料构成。 因此，为了集成滤波器在各频段其操作变得紧凑。

    Air gap type FBAR, duplexer using the FBAR, and fabricating methods thereof
    6.
    发明公开
    Air gap type FBAR, duplexer using the FBAR, and fabricating methods thereof 有权
    Dünnschicht-Resonator von Luftspaltbauart，Duplexer mit dem Resonator und deren Herstellungsverfahren

    公开(公告)号：EP1469599A3

    公开(公告)日：2005-05-18

    申请号：EP04252170.8

    申请日：2004-04-14

    申请人： Samsung Electronics Co., Ltd.

    发明人： Park, Yun-Kwon ,  Song, In-sang ,  Ha, Byeoung-ju ,  Song, II-jong ,  Kim, Duck-hwan

    IPC分类号： H03H9/17 ,  H03H3/02

    CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/02133 ,  H03H9/0571 ,  H03H9/587 ,  H03H9/706 ,  Y10T29/42

    摘要： An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.

    摘要翻译： 气隙型膜体声波谐振器（FBAR）是通过固定两个基板部分而形成的，一个提供谐振结构，另一个提供分离结构，即空腔。 当固定两个基板部分时，共振结构在空腔之上，形成将谐振结构与支撑基板隔离的气隙。 FBAR可以用于形成双工器，其包括多个谐振结构，相应的多个空腔以及形成在空腔之间的隔离部分。 谐振结构和腔的独立创建都简化了处理，并允许额外的元件容易地集成在空腔中。

    Bulk acoustic wave resonator and methods of making the same
    10.
    发明公开
    Bulk acoustic wave resonator and methods of making the same 有权
    Volumenwellenresonator和Herstellungsverfahrendafür

    公开(公告)号：EP1585218A2

    公开(公告)日：2005-10-12

    申请号：EP05252130.9

    申请日：2005-04-05

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Song, In-Sang ,  Park, Yun-Kwon ,  Ha, Byeoung-ju ,  Kim, Duck-hwan

    IPC分类号： H03H3/02 ,  H03H9/17

    CPC分类号： H03H3/02 ,  H03H9/02149 ,  H03H9/105 ,  H03H9/173 ,  H03H9/174 ,  H03H2003/021 ,  H03H2003/023 ,  Y10T29/42

    摘要： A resonator having a membrane formed of a piezoelectric layer sandwiched between first and second electrode is suspended above a cavity formed from the back surface of the support structure. In one embodiment, the cavity walls are substantially perpendicular to the back surface. In another embodiment, the first electrode is formed in the cavity such that it is electrically connected to an electrode on the back surface of the support structure. In yet another embodiment, the cavity is formed via an etch through via holes in the back surface of the support structure, which leads to greater flexibility in designing a method of manufacture while reducing the need for alignment relative to other designs.

    摘要翻译： 具有由夹在第一和第二电极之间的压电层形成的膜的谐振器悬挂在从支撑结构的后表面形成的空腔的上方。 在一个实施例中，空腔壁基本上垂直于后表面。 在另一个实施例中，第一电极形成在空腔中，使得其与支撑结构的背表面上的电极电连接。 在另一个实施例中，通过蚀刻穿过支撑结构的后表面中的通孔形成空腔，这导致在设计制造方法时的更大的灵活性，同时减少了相对于其他设计的对准的需要。