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1.发明公开Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof 有权与柔性衬底上的保护层的薄膜晶体管，与用于电子设备和方法用于制备
公开(公告)号：EP1435661A3
公开(公告)日：2006-01-18
申请号：EP03258178.7
申请日：2003-12-24
发明人： Kim, Do-young, 842-1104 Byeokjeokgol 8-danjii , Park, Wan-jun , Park, Young-soo, 204-502 Dongsuwon LG Village , Lee, June-key, 241-504 Hwanggol Maeul , Min, Yo-sep, 104-1506 Dujin Apt. , Kwon, Jang-yeon , Seo, Sun-ae, 932-301 (Family Life-dong) , Choi, Young-min, 205-1203 Unam Jugong 2-danji Apt. , Chae, Soo-doo, 326-301 Sibeom-danji Hanyang Apt.
IPC分类号： H01L27/00 , G02F1/1333
CPC分类号： H01L29/78603 , G02F1/133305 , G02F1/136227 , G02F2201/50 , H01L23/3192 , H01L24/24 , H01L24/82 , H01L27/1214 , H01L27/3248 , H01L27/3258 , H01L29/66757 , H01L51/5253 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2251/5338 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01009 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01027 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01058 , H01L2924/01078 , H01L2924/01082 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/00
摘要： Provided are a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof. The thin film semiconductor device includes a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. The electronic device includes a flexible substrate and a semiconductor chip formed on the flexible substrate and further includes a protective cap that seals the semiconductor chip. The durability of the thin film semiconductor device against the stress due to the bending of the substrate is improved by using the protective cap.
摘要翻译： 提供了使用相同的实现上的柔性基板的薄膜半导体装置，电子装置，以及它们的制造方法。 的薄膜半导体器件包括：柔性基板，半导体芯片，在所有这是在挠性基板形成，并且保护帽，用于密封半导体芯片。 该电子设备包括柔性基板和形成在所述柔性基板的半导体芯片，并且还包括保护帽确实密封半导体芯片。 针对应力的薄膜半导体装置的由于基板的弯曲的耐久性是通过使用保护盖的改善。
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2.发明授权Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof 有权与柔性衬底上的保护层的薄膜晶体管，与用于电子设备和方法用于制备
公开(公告)号：EP1435661B1
公开(公告)日：2012-05-02
申请号：EP03258178.7
申请日：2003-12-24
发明人： Kim, Do-young, 842-1104 Byeokjeokgol 8-danjii , Park, Wan-jun , Park, Young-soo, 204-502 Dongsuwon LG Village , Lee, June-key, 241-504 Hwanggol Maeul , Min, Yo-sep, 104-1506 Dujin Apt. , Kwon, Jang-yeon , Seo, Sun-ae, 932-301 (Family Life-dong) , Choi, Young-min, 205-1203 Unam Jugong 2-danji Apt. , Chae, Soo-doo, 326-301 Sibeom-danji Hanyang Apt.
IPC分类号： H01L27/32 , G02F1/1333
CPC分类号： H01L29/78603 , G02F1/133305 , G02F1/136227 , G02F2201/50 , H01L23/3192 , H01L24/24 , H01L24/82 , H01L27/1214 , H01L27/3248 , H01L27/3258 , H01L29/66757 , H01L51/5253 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2251/5338 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01009 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01027 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01058 , H01L2924/01078 , H01L2924/01082 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/00
摘要： Provided are a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof. The thin film semiconductor device includes a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. The electronic device includes a flexible substrate and a semiconductor chip formed on the flexible substrate and further includes a protective cap that seals the semiconductor chip. The durability of the thin film semiconductor device against the stress due to the bending of the substrate is improved by using the protective cap.
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3.发明公开Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof 有权与柔性衬底上的保护层的薄膜晶体管，与用于电子设备和方法用于制备
公开(公告)号：EP1435661A2
公开(公告)日：2004-07-07
申请号：EP03258178.7
申请日：2003-12-24
发明人： Kim, Do-young, 842-1104 Byeokjeokgol 8-danjii , Park, Wan-jun , Park, Young-soo, 204-502 Dongsuwon LG Village , Lee, June-key, 241-504 Hwanggol Maeul , Min, Yo-sep, 711-401 Salgugol , Kwon, Jang-yeon , Seo, Sun-ae, 932-301 (Family Life-dong) , Choi, Young-min , Chae, Soo-doo, 326-301 Sibeom-danji Hanyang Apt.
IPC分类号： H01L27/00 , G02F1/1333
CPC分类号： H01L29/78603 , G02F1/133305 , G02F1/136227 , G02F2201/50 , H01L23/3192 , H01L24/24 , H01L24/82 , H01L27/1214 , H01L27/3248 , H01L27/3258 , H01L29/66757 , H01L51/5253 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2251/5338 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01009 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01027 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01058 , H01L2924/01078 , H01L2924/01082 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/00
摘要： Provided are a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof. The thin film semiconductor device includes a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. The electronic device includes a flexible substrate and a semiconductor chip formed on the flexible substrate and further includes a protective cap that seals the semiconductor chip. The durability of the thin film semiconductor device against the stress due to the bending of the substrate is improved by using the protective cap.
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