摘要:
A fast imaging device (32) has a charge signal converter (33), a charge signal accumulator (36) and a charge signal transporter (37). One each charge signal accumulator (36) is provided to each charge signal converter (33). A charge signal accumulator (36) extends linearly while inclining with respect to a line L2 connecting charge signal converters adjacent to each other in a columnar direction. One each charge signal transporter (37) is provided to a column of charge signal converters (33). The other end of a charge signal accumulator (36), connected at one end thereof to a charge signal converter (33) constituting a corresponding column, merges with a charge signal transporter (37). This construction reduces noise and increases a frame rate.
摘要:
A high-speed image sensor has a plurality of signal converting means (30) for generating electric signals corresponding to an incident light intensity and a plurality of electric signal recording means (33) for recording electric signals output from corresponding signal converting means (30). The electric signal recording means (33) is linearly shaped and has a read-out line (58a) for each of longitudinal sections thereof. The read-out line (58) is used for directly reading out the electric signals out of a light receptive area.
摘要:
An imaging element (52) comprises a chip (53) having an imaging face (31) and a package (41) to which the chip (53) is attached. The imaging face (31) is divided into blocks (31a-31d) each having an image information reading line (39). The imaging device has a position adjusting mechanism (55) for changing, by 1/2 of the length (64) of the blocks (31a-31d) and by 1/2 of the width thereof, the relative position of the imaging face (31) relative to the optical axis (60) of the incident light emitted from an optical system (51) and directed to the imaging face (31).
摘要:
A frame-transfer ultrahigh speed image pickup device. Charge the amount of which corresponds to the intensity of an incident beam is generated in an element (123b) of each charge transfer path (123) corresponding to a window (115) of a cutoff film (114). The generated charge is transferred along the charge transfer path (123) by a voltage applied from charge transfer electrodes (116-118). The parts (116a-118a) corresponding to the windows (115) of the charge transfer electrodes (116-118) have dimensions in the direction of charge transfer larger than those of the parts (116b-118b) covered with the cutoff film (114) in the direction of charge transfer.
摘要:
An image device (21) which is formed by stacking a plurality of chips each having a plurality of converters (33) that are disposed in the vicinity of a first end (31a) to form on or a plurality of rows and convert incident rays into electric signals, and having a plurality of electric signal storage units (35) that extend from each converter (33) to a second end (31b) on the opposite side of the first end (31a), for storing electric signals. A first end (31a) of each chip (31) is staggered from another first end (31a) of an adjacent chip (31) so that a row of converters (33) of individual chips (31) are exposed stepwise.