公开(公告)号：EP1640474A4

公开(公告)日：2011-06-22

申请号：EP04745448

申请日：2004-05-31

申请人： SHINCRON CO LTD

发明人： SONG YIZHOU ,  SAKURAI TAKESHI ,  MURATA TAKANORI

IPC分类号： C23C14/34 ,  C23C14/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/35 ,  C23C14/56 ,  C23C14/58 ,  C23C16/44 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/31 ,  H01L21/318 ,  H05H1/46

CPC分类号： C23C14/0036 ,  C23C14/0078 ,  C23C14/083 ,  C23C14/10 ,  C23C14/352 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  C23C14/5853 ,  C23C16/4404 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32477 ,  H01L21/318 ,  H05H1/46

摘要： A thin film deposition apparatus (1) of the present invention includes a vacuum container (11) for maintaining a vacuum therein, gas introduction means (76) for introducing a reactive gas into the vacuum container (11), and plasma generating means (61) for generating a plasma of the reactive gas within the vacuum container (11).

公开(公告)号：EP1790756A4

公开(公告)日：2011-12-14

申请号：EP05768945

申请日：2005-08-05

申请人： SHINCRON CO LTD

发明人： SONG YIZHOU ,  ARAI TETSUJI ,  CHIBA KOKI ,  SAKURAI TAKESHI ,  JIANG YOUSONG

IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  H01L21/31

CPC分类号： C23C14/35 ,  C23C14/34 ,  C23C14/564

公开(公告)号：EP1630248A4

公开(公告)日：2008-11-12

申请号：EP04745508

申请日：2004-06-02

申请人： SHINCRON CO LTD

发明人： SONG YIZHOU ,  SAKURAI TAKESHI

IPC分类号： C23C14/34 ,  C23C14/56 ,  C23C14/58 ,  G02B1/10

CPC分类号： C23C14/5846 ,  C23C14/0078 ,  C23C14/568

摘要： The thin film forming method of the invention comprises an optical characteristic adjusting step for repetitively transferring a substrate holder (13) between a region for performing an intermediate thin film forming step and a region for performing a film composition converting step while controlling the transfer speed for the substrate holder (13) used to hold a substrate, so as to adjust the film composition of the thin film to be finally formed, thereby forming a thin film having an optical characteristic value in a region where a hysteresis phenomenon takes place.

公开(公告)号：EP1637624A4

公开(公告)日：2007-12-26

申请号：EP03733231

申请日：2003-06-02

申请人： SHINCRON CO LTD

发明人： SONG YIZHOU ,  SAKURAI TAKESHI ,  MURATA TAKANORI

IPC分类号： C23C14/34 ,  C23C14/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/35 ,  C23C14/56 ,  C23C14/58 ,  C23C16/44 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/31 ,  H01L21/318 ,  H05H1/46

CPC分类号： C23C14/0036 ,  C23C14/0078 ,  C23C14/083 ,  C23C14/10 ,  C23C14/352 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  C23C14/5853 ,  C23C16/4404 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32477 ,  H01L21/318 ,  H05H1/46

摘要： A thin film deposition apparatus (1) of the present invention includes a vacuum container (11) for maintaining a vacuum therein, gas introduction means (76) for introducing a reactive gas into the vacuum container (11), and plasma generating means (61) for generating a plasma of the reactive gas within the vacuum container (11).