摘要:
The present invention has been made in order to manufacture a silicon semiconductor substrate used for a semiconductor integrated circuit device, higher in carrier mobility, especially in electron mobility, which is a carrier of an n-type FET, on a {100} plane as a main surface, and provides a silicon semiconductor substrate and a method for manufacturing the same, wherein the conventional RCA cleaning is employed without the use of special cleaning and the surface of the substrate is planarized at an atomic level to thereby decrease the surface roughness thereof without the use of the radical oxidation. The present invention provides a silicon semiconductor substrate comprising: a {110} plane or a plane inclined from a {110} plane as a main surface of the substrate; and steps arranged at an atomic level along a orientation on the main surface.
摘要:
On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction).
摘要:
Flow rate control accuracy is prevented from being reduced in a low flow rate region to enable highly accurate flow rate control over the entire flow rate control region. By this, a chamber inner pressure is highly accurately controlled over a wide range by regulating the flow rate of a gas fed to a chamber. A gas feeding device for feeding a gas to a chamber, where the device is constituted of parallelly connected pressure-type flow rate control devices and a control device for controlling the flow rate control devices and feeds a desired gas, while controlling the flow rate, to a chamber deaerated by a vacuum pump. The gas feeding device is constructed such that one of the pressure-type flow control devices controls a gas flow rate range of up to 10% maximum of the maximum flow rate fed to the chamber and the remaining flow control devices control the remaining range. Further, a pressure detector is installed on a chamber and a detected value from the detector is inputted in the control device. Control signals to the pressure-type flow rate control devices are regulated to control the amount of the gas fed to the chamber, controlling a chamber inner pressure.
摘要:
A silicon carbide product is disclosed which is characterized by having a surface with a metal impurity concentration of not more than 1×10 11 (atoms/cm 2 ). Also disclosed are a method for producing such a silicon carbide product and a method for cleaning a silicon carbide product. A silicon carbide having such a highly cleaned surface can be obtained by cleaning it with a hydrofluoric acid, a hydrochloric acid, or an aqueous solution containing a sulfuric acid and a hydrogen peroxide solution. The present invention provides a highly cleaned silicon carbide, and thus enables to produce a semiconductor device which is free from consideration on deterioration in characteristics caused by impurities. Further, when the silicon carbide is used in a unit for semiconductor production or the like, there is such an advantage that an object processed in the unit can be prevented from suffering an adverse affect of flying impurities.
摘要翻译:公开了一种碳化硅产品,其特征在于具有不大于1×10 11(原子/ cm 2)的金属杂质浓度的表面。 还公开了制造这种碳化硅产品的方法和清洁碳化硅产品的方法。 通过用氢氟酸,盐酸或含有硫酸和过氧化氢溶液的水溶液进行清洗,可以得到具有高度清洁表面的碳化硅。 本发明提供了一种高度清洁的碳化硅,因此能够制造出不考虑由杂质引起的特性劣化的半导体器件。 此外,当碳化硅用于半导体生产等的单元中时,具有能够防止在该单元中加工的物体遭受飞散杂质的不利影响的优点。
摘要:
A semiconductor device exhibiting good characteristics by sustaining the dielectric constant of a High-K insulating film in a high state, and a process for fabricating a semiconductor device in which the dielectric constant of the High-K insulating film can be sustained in a high state. The semiconductor device comprises a silicon substrate, a gate electrode layer, and a gate insulating film interposed between the silicon substrate and the gate electrode layer. The gate insulating film is a high dielectric constant (high-k) film produced by nitriding a mixture of a metal and silicon. Since the High-K film itself is a nitride, generation of SiO2 can be prevented.
摘要:
In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
摘要:
A semiconductor device comprising a substrate of SiC provided with an insulating film through plasma treatment. Rare gas is incorporated in the insulating film. Preferably, at least one of krypton (Kr), argon (Ar) and xenon (Xe) is used as the rare gas. A combination of oxygen gas and krypton (Kr) is especially preferred.