Near UV photoresist
    4.
    发明公开
    Near UV photoresist 失效
    Fotoresistfürnahes U.V.

    公开(公告)号:EP0423446A1

    公开(公告)日:1991-04-24

    申请号:EP90114949.2

    申请日:1990-08-03

    CPC classification number: G03F7/0045 G03F7/038

    Abstract: A photoacid-generating photoresist composition sensitized with an aromatic, multi-ring, heterocylcic nitrogen containing sensitizer, preferably a ring extended phenothiazine derivative. The use of the sensitizer permits exposure of photoresists to near UV irradiation where such photoresists have heretofore been exposed to deep UV irradiation. The invention is especially useful for acid hardening photoresist systems.

    Abstract translation: 一种产生光致酸的光致抗蚀剂组合物,其用芳香族,多环,杂环状含氮增感剂,优选环延长的吩噻嗪衍生物敏化。 敏化剂的使用允许光致抗蚀剂暴露于近紫外辐射下,其中这种光刻胶已经暴露于深紫外线照射。 本发明特别适用于酸硬化光致抗蚀剂体系。

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