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    A memory device
    1.
    发明公开
    A memory device 有权
    存储设备

    公开(公告)号：EP1306852A2

    公开(公告)日：2003-05-02

    申请号：EP02078984.8

    申请日：2002-09-27

    申请人： STMicroelectronics S.r.l. ,  OVONYX Inc.

    发明人： Casagrande, Giulio ,  Lowrey, Tyler ,  Bez, Roberto ,  Wicker, Guy ,  Spall, Edward ,  Hudgens, Stephen ,  Czubatyj, Wolodymyr

    IPC分类号： G11C11/34

    CPC分类号： G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/72

    摘要： A memory device (100) including a plurality of memory cells (M h,k ), a plurality of insulated first regions (220 h ) of a first type of conductivity formed in a chip of semiconductor material (203), at least one second region (230 k ) of a second type of conductivity formed in each first region, a junction between each second region and the corresponding first region defining a unidirectional conduction access element (D h,k ) for selecting a corresponding memory cell connected to the second region when forward biased, and at least one contact (225 h ) for contacting each first region; a plurality of access elements are formed in each first region, the access elements being grouped into at least one sub-set consisting of a plurality of adjacent access elements (D h,k ,D h,k+1 ) without interposition of any contact, and the memory device further includes means (110c,113,125) for forward biasing the access elements of each sub-set simultaneously.

    摘要翻译： 一种存储器件（100），包括多个存储器单元（Mh，k），在半导体材料（203）的芯片中形成的具有第一导电类型的多个绝缘第一区域（220h），至少一个第二区域 在每个第一区域中形成的第二导电类型的第二区域，每个第二区域和对应的第一区域之间的接点限定单向导通入元件（D h，k），用于当正向偏置时选择连接到第二区域的相应存储单元 以及用于接触每个第一区域的至少一个触点（225h） 在每个第一区域中形成多个存取元件，所述存取元件在不插入任何接触的情况下被分组成至少一个由多个相邻存取元件（Dh，k，Dh，k + 1）组成的子集，以及 该存储设备还包括用于同时正向偏置每个子集的访问元件的装置（110c，113,125）。

    A memory device
    3.
    发明公开
    A memory device 有权

    公开(公告)号：EP1306852A3

    公开(公告)日：2004-03-10

    申请号：EP02078984.8

    申请日：2002-09-27

    申请人： STMicroelectronics S.r.l. ,  OVONYX Inc.

    发明人： Casagrande, Giulio ,  Lowrey, Tyler ,  Bez, Roberto ,  Wicker, Guy ,  Spall, Edward ,  Hudgens, Stephen ,  Czubatyj, Wolodymyr

    IPC分类号： G11C11/34 ,  G11C16/02

    CPC分类号： G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/72

    摘要： A memory device (100) including a plurality of memory cells (M h,k ), a plurality of insulated first regions (220 h ) of a first type of conductivity formed in a chip of semiconductor material (203), at least one second region (230 k ) of a second type of conductivity formed in each first region, a junction between each second region and the corresponding first region defining a unidirectional conduction access element (D h,k ) for selecting a corresponding memory cell connected to the second region when forward biased, and at least one contact (225 h ) for contacting each first region; a plurality of access elements are formed in each first region, the access elements being grouped into at least one sub-set consisting of a plurality of adjacent access elements (D h,k ,D h,k+1 ) without interposition of any contact, and the memory device further includes means (110c,113,125) for forward biasing the access elements of each sub-set simultaneously.

    Lateral phase change memory
    4.
    发明公开
    Lateral phase change memory 有权
    侧边的Phasenwechselspeicher

    公开(公告)号：EP1710850A1

    公开(公告)日：2006-10-11

    申请号：EP05102814.0

    申请日：2005-04-08

    申请人： STMicroelectronics S.r.l.

    发明人： Dodge, Richard ,  Wicker, Guy

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1253 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/16

    摘要： A lateral phase change memory (50) includes a pair of electrodes (20, 24) separated by an insulating layer (22). The first electrode (20) is formed in an opening (18) in an insulating layer (16) and is cup-shaped. The first electrode (20) is covered by the insulating layer (22) which is, in turn, covered by the second electrode (24). As a result, the spacing between the electrodes (20, 24) may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region (36).

    摘要翻译： 横向相变存储器（50）包括由绝缘层（22）分开的一对电极（20,24）。 第一电极（20）形成在绝缘层（16）的开口（18）中，并且是杯形的。 第一电极（20）由绝缘层（22）覆盖，绝缘层又由第二电极（24）覆盖。 结果，电极（20,24）之间的间隔可以被非常精确地控制并且被限制在非常小的尺寸上。 在形成相变材料区域（36）之前，电极有利地由相同的材料形成。