-
1.发明公开METHOD FOR MACHINING NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR WAFER, PROCESS FOR PRODUCING NITRIDE SEMICONDUCTOR DEVICE, AND NITRIDE SEMICONDUCTOR DEVICE 审中-公开METHOD FOR期一NITRIDHALBLEITERWAFERS，NITRIDHALBLEITERWAFER，METHOD工业生产用于制造氮化物半导体器件和氮化物半导体器件
公开(公告)号：EP2246877A4
公开(公告)日：2013-10-30
申请号：EP09714856
申请日：2009-02-16
IPC分类号： H01L21/304 , B24B9/00 , B24D3/00 , B24D3/22 , B24D3/32 , H01L21/306 , H01L21/3065 , H01L33/32
CPC分类号： H01L21/02021 , C30B29/403 , C30B33/00 , H01L24/32 , H01L33/0075 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , Y10S438/928 , Y10S438/959 , Y10S438/977 , H01L2924/00014 , H01L2924/00
-
2.发明公开GROUP III NITRIDE COMPOSITE SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开GROUP III NITRIDVERBUNDSUBSTRAT，工艺为III族氮化物半导体部件用和方法
公开(公告)号：EP2908330A4
公开(公告)日：2016-06-01
申请号：EP13845267
申请日：2013-09-04
发明人： ISHIBASHI KEIJI , HACHIGO AKIHIRO , HIROMURA YUKI , MATSUMOTO NAOKI , NAKAHATA SEIJI , NAKANISHI FUMITAKE , YANAGISAWA TAKUYA , UEMATSU KOJI , SEKI YUKI , YAMAMOTO YOSHIYUKI , YOSHIZUMI YUSUKE , MIKAMI HIDENORI
IPC分类号： H01L21/02 , H01L21/762 , H01L33/00
CPC分类号： H01L21/76251 , B32B7/02 , B32B7/04 , B32B7/06 , B32B2307/20 , H01L21/76254 , H01L21/76256 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L33/025 , H01L2924/0002 , Y10T428/24298 , Y10T428/24322 , Y10T428/24331 , Y10T428/2495 , Y10T428/24975 , Y10T428/26 , Y10T428/265 , Y10T428/31 , H01L2924/00
摘要： Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate (1) includes a group III nitride film (13) and a support substrate (11) formed from a material different in chemical composition from the group III nitride film (13). The group III nitride film (13) is joined to the support substrate (11) in one of a direct manner and an indirect manner. The group III nitride film (13) has a thickness of 10 µm or more. A sheet resistance of a group III-nitride-film (13)-side main surface (13m) is 200 ©/sq or less. A method for manufacturing the group III nitride composite substrate (1) includes the steps of: bonding the group III nitride film (13) and the support substrate (11) to each other in one of a direct manner and an indirect manner; and reducing the thickness of at least one of the group III nitride film (13) and the support substrate bonded to each other.
-
搜索结果
2 条记录 (耗时 0.01 秒)
